34results about How to "Increased current transfer capability" patented technology

The invention provides a split-type electric pressure cooker, which comprises a pot body and a pot cover. According to the scheme, a first electric energy transmission device and a power supply deviceare arranged on the pot body; a second electric energy transmission device, a float and a position detection device are arranged on the pot cover; the first electric energy transmission device and the second electric energy transmission device are matched when the pot cover and the pot body are fastened, so that electric energy transmission between the pot body and the pot cover is achieved; theposition detection device is electrically connected to the second electric energy transmission device and is used for detecting whether the float is ejected up or not and transmitting a detection result to a display device in the form of an electrical signal, so that corresponding information can be displayed by the display device in accordance with the electrical signal and obvious safety tips can be offered to users to inform the users that whether it is safe to uncover the electric pressure cooker at present or not and to prevent an uncovering operation of the users under a circumstance that pressure in the electric pressure cooker exceeds a safety range; therefore, safety accidents are prevented.

The invention provides a split-type electric pressure cooker, which comprises a cooker body, a cooker cover, and further comprises a temperature measuring device, a first electric energy transmissiondevice and a second electric energy transmission device, wherein a power supply device is arranged in the cooker body; the temperature measuring device is arranged on the cooker cover; a temperature sensing probe of the temperature measuring device extends into a cooker opening of the cooker body when the cooker cover and the cooker body are fastened; the first electric energy transmission deviceis arranged on the cooker body and can be electrically connected to the power supply device; the second electric energy transmission device is arranged on the cooker cover and is electrically connected to the temperature measuring device, wherein when the cooker cover and the cooker body are fastened, the first electric energy transmission device and the second electric energy transmission deviceare matched, so that current and electric signal transmission can be achieved; and when the cooker cover is opened, the first electric energy transmission device and the second electric energy transmission device are separated. According to the scheme, the temperature measuring device is arranged on the cooker cover, and the first electric energy transmission device and the second electric energytransmission device are matched so as to conduct electricity transmission; and when the split-type electric pressure cooker is used for conducting cooking, the temperature measuring device is insertedinto the cooker opening so as to directly detect a temperature value of a cooking region in the cooker body, so that temperature measuring accuracy is improved.

The invention provides a split type electric pressure cooker. The electric pressure cooker includes a cooker body and a cooker cover matched with the cooker body in use; a power supply device is arranged on the cooker body, and the split type electric pressure cooker further includes an electric control exhaust valve, an electric energy transfer device and an electric energy receiving device, wherein the electric control exhaust valve is installed on the cooker cover, the electric energy transfer device is installed on the cooker body and electrically connected with the power supply device, the power supply device is used for transmitting electrical energy to the electric energy transfer device, and the electric energy receiving device is installed on the cooker cover and electrically connected with the electric control exhaust valve. According to the scheme, through the cooperation of the electric energy transfer device and the electric energy receiving device, electric energy transmission is achieved between the cooker body and the cooker cover, and therefore, an existing manual mechanical exhaust mode is changed into an electric control exhaust mode. According to the design, when exhausting is conducted, a user does not need to manually open an exhaust valve in the near distance, the user can be prevented from being scalded by steam, and the safety of the product is improved.

The present invention relates to a semiconductor structure and a formation method thereof. The formation method of the semiconductor structure comprises the steps of: providing a substrate, wherein the substrate comprises a first stacked structure and a first channel hole structure penetrating the first stacked structure, wherein the top portion of the first channel hole structure is provided witha semiconductor layer; forming a second stacked structure at the surface of the substrate; forming a second channel hole configured to penetrate the second stacked structure and the semiconductor layer with partial depth; performing oxidation processing of the surface of the semiconductor layer at the bottom portion of the second channel hole to form an oxidation layer; forming a function layer covering the inner wall of the second channel hole; removing the function layer and the oxidation layer located at the bottom portion of the second channel hole to form a second function layer, and exposing the semiconductor layer under the oxidation layer; and forming a second channel layer at the surface of the second function layer and the surface of the exposed semiconductor layer. The formation method can improve the quality of the semiconductor layer so as to improve the performances of the semiconductor structure.

The present invention relates to an integrated high side gate driver structure for driving a power transistor. The high side gate driver structure comprises a semiconductor substrate comprising a first polarity semiconductor material in which a first well diffusion comprising a second polarity semiconductor material is formed. A peripheral outer wall of the first well diffusion is abutted to the semiconductor substrate. A second well diffusion, comprising first polarity semiconductor material, is arranged inside the first well diffusion such that an outer peripheral wall of the second well diffusion is abutted to an inner peripheral wall of the first well diffusion. The integrated high side gate driver structure further comprises a gate driver comprising a high side positive supply voltage port, a high side negative supply voltage port, a driver input and a driver output, wherein the gate driver comprises a transistor driver arranged in the second well diffusion such that a control terminal of the transistor driver and an output terminal of the transistor driver is coupled to the driver input and the driver output, respectively; the integrated high side gate driver structure also comprises a first electrical connection between the first well diffusion and the high side negative supply voltage port and a second electrical connection between the second well diffusion and the high side negative supply voltage port.

The invention relates to a semiconductor structure and a formation method thereof. The formation method of the semiconductor structure comprises the steps of providing a substrate, wherein the substrate comprises a first stack structure and a first channel hole structure, the first channel hole structure penetrates through the first stack structure, a semiconductor layer and a groove are further formed in the top of the first channel hole structure, and the groove is arranged in the semiconductor layer; forming an oxide layer on a surface of the semiconductor layer; forming an etching stop layer, arranged on a surface of the oxide layer, in the groove; forming a second stack structure on a surface of the first stack structure and a surface of the etching stop layer; etching the second stack structure to form a second channel hole penetrating through the second stack structure; removing the etching stop layer, and exposing the oxide layer; forming a second functional side wall on a surface of a side wall of the second channel hole, etching a part of the oxide layer, and exposing the semiconductor layer at the bottom of the second channel hole; and forming a second channel layer on surfaces of the second functional side wall and the exposed semiconductor layer. By the method, the quality of the semiconductor layer can be improved, so that the performance of the semiconductor structure is improved.

A socket connector terminal is disclosed having a terminal body, two contacts, and at least two welding portions. The two contacts are formed at opposite ends of the terminal body, each contact having a positioning portion that prevents movement in the socket connector along a plug connector insertion direction. The two welding portions are formed between the opposite ends of the terminal body, and are constructed to be welded to a circuit board.

The invention discloses a low-on-resistance trench silicon carbide power device and a manufacturing method thereof. The cellular structure comprises an N-type substrate, an N-type epitaxial layer anda trench; a graphene layer is arranged on the side wall of the trench; a gate oxide layer and a polycrystalline silicon gate are arranged in the trench; a passivation layer is arranged above the polycrystalline silicon gate; a P-type body region, an N-type source region and a P-type body contact region are arranged on the two sides of the trench; a P-type shielding layer is arranged below the graphene layer; source metal is arranged on the upper surface of the source region; and drain metal is arranged on the lower surface of the substrate. According to the power device, an electron beam method is used, metal and a carbon source gas are used for assisting, and the graphene layer grows on the side wall of the trench. The power device is characterized in that the graphene layer on the side wall of the trench reduces the on resistance. The shielding layer below the graphene layer shields the current flowing through the graphene layer when the device is in an off state, and the turn-off characteristic of the device is improved. The growth of the graphene layer is assisted by metal nickel and the carbon source gas, so that the uniformity, the thickness and the growth rate of the graphene layer are improved.

The invention discloses an electric connector comprising an insulating body and multiple terminals. Each of the multiple terminals is provided with a first metal layer and a second metal layer which is arranged on the bottom side of the first metal layer, and the first metal layer is provided with a first electric contact, the second metal layer is provided with a second electric contact and the first electric contact and the second electric contact are arranged in a way of being suitable for simultaneously contacting the corresponding matching terminals. According to the electric connector, each terminal is provided with two metal layers which are vertically laminated so that the conductive area of the whole terminal can be increased, the resistance of the whole terminal can be reduced, the current transmission capacity of the terminal can be enhanced and thus high current can be transmitted. Besides, the two metal layers of each terminal are provided with the electric contacts contacted with the matching terminals of an external circuit so that the two metal layers of each terminal can be electrically contacted with the matching terminals simultaneously, the contact impedance of the terminals can be reduced and the electric contact reliability of the terminals can be enhanced.

The invention discloses high-thermal-conductivity silver paste for bonding a high-power component and a preparation method of the high-thermal-conductivity silver paste. The high-thermal-conductivitysilver paste comprises epoxy resin, a modifier, a curing agent and silver powder, the epoxy resin is one or a mixture of more of bisphenol A epoxy resin, alicyclic epoxy resin and bisphenol F epoxy resin; the modifier is formed by mixing one or more of thermoplastic phenolic resin, gamma butyrolactone, bisphenol A diallyl ether and bisphenol A glycidyl methacrylate; the curing agent is formed by mixing one or more of a latent curing agent 2-ethyl-4-methylimidazole, 1-cyanoethyl-2-ethyl-4-methylimidazole, methylhexahydrophthalic anhydride and dicyandiamide; and the silver powder is formed by mixing one or more of flake silver powder, sphere-like silver powder and part of flake silver powder. The invention also provides a preparation method and a test method of the silver paste. The problemsthat existing silver paste is poor in thermoelectricity and bonding performance, and the bonding strength and the heat conduction performance contradict with each other are solved. The method is widely applied to the bonding process of the power device.

An integrated high side gate driver structure for driving a power transistor. The structure includes a semiconductor substrate having a first polarity semiconductor material in which a first well diffusion including a second polarity semiconductor material is formed. An outer wall of the first well diffusion is abutted to the substrate. A second well diffusion, having first polarity semiconductor material, is arranged inside the first well diffusion such that an outer wall of the second well diffusion abuts an inner wall of the first well diffusion. The structure includes a gate driver having high side positive and negative supply voltage ports, and a driver input and output. The gate driver includes a transistor driver in the second well diffusion such that control and output terminals of the transistor driver are coupled to the driver input and output, respectively. The structure also includes respective electrical connections between the first and second well diffusions and the negative supply voltage port.

The invention provides an air cooling structure for a circuit breaker. The circuit breaker comprises a touch arm (3), a moving contact (1) and a fixed contact (9), wherein the moving contact (1) is fixedly connected with one end of the touch arm (3); a fan (2) is arranged in the touch arm (3) of the circuit breaker to blow air to the touch arm (3), the moving contact (1) and the fixed contact (9) of the circuit breaker, so as to prevent the temperatures of the touch arm (3), the moving contact (1) and the fixed contact (9) from raising; a ventilating slot is formed in the touch arm (3); air enters the touch arm (3) from the ventilating slot, flows by the moving contact (1), flows out from a contact gap between the moving contact (1) and the fixed contact (9), and is exhausted after flowing by the fixed contact (9). The forced air cooling manner of the air cooling structure is targeted, and the efficiency of the fan is high.

The invention provides a multi-channel trench insulated gate bipolar transistor and a manufacturing method thereof. The multi-channel trench insulated gate bipolar transistor comprises a P-type substrate, an N-type buffer layer, an N-type drift region, a first P-type base region, a first P-type contact region, and a first N-type emitter region. A second P-type base region, a second P-type contact region, a second N-type emitter region and a P-type shielding layer are arranged below a trench. A gate oxide layer is arranged on the inner wall and the bottom of the trench, and a polysilicon gate is arranged in the gate oxide layer. The trench is covered with a passivation layer, first emitter metal and second emitter metal are formed on the upper surface, and collector metal is formed on the lower surface of the P-type substrate. Before the trench is formed, ion implantation of P-type impurities and N-type impurities is performed below the trench for multiple times, and the emitter implantation effect is improved, so that a relatively strong drift region conductivity modulation effect is generated, the resistivity of the drift region is remarkably reduced, and the on-resistance of the device is greatly reduced; and meanwhile, a conductive channel is added, so that the channel resistance is reduced.

The invention discloses a new type of energy-saving electric wire, which comprises several conductors arranged in the insulating layer, and the several conductors are arranged in parallel and side by side in the insulating layer. The beneficial effect of the present invention is that: in the case of the same cross section, compared with the electric wire products using regular stranded conductors, the carrying capacity is increased by nearly 2%. Under the same amount of conductor, the current transmission capacity of the conductor is effectively improved.

The invention discloses a Sense-Switch type pFLASH unit structure with high power and low electric leakage, and belongs to the technical field of Flash type switch units. A deep N well is arranged ona substrate; an active region of a programming / erasing transistor T1 and an active region of a signal transmission transistor T2 are manufactured in the deep N well; a tunnel oxide layer, a floating gate polycrystalline layer, an IPD polycrystalline dielectric layer and a control gate polycrystalline layer are sequentially arranged on the deep N well; a side wall is arranged on the outer side of the control gate polycrystalline layer; an ILD dielectric layer is arranged on the deep N well, and a metal layer is arranged on the ILD dielectric layer; the periphery of the tunnel oxide layer is provided with an SAB dielectric layer which is internally filled with metal silicide, a through hole connecting structure penetrating through the ILD dielectric layer is arranged above the metal silicide, and the metal layer is in ohmic contact with the programming / erasing MOS transistor T1 and the signal transmission transistor T2 through the through hole connecting structure and the metal silicide.The static electricity leakage level of the Flash basic unit in the Flash type FPGA can be reduced, the current transmission capacity of the Flash type FPGA is improved, and a new thought is providedfor development of the Flash type FPGA with low electricity leakage and high output power.

The invention discloses a preparation method of self-supported three-dimensional graphene. According to the preparation method, hexamethylene tetramine is taken as the foaming agent, glucose is taken as the carbon source, then the raw materials are heated to a certain temperature, the temperature is maintained for a while, then the raw materials are cooled to the room temperature to prepare the self-supported graphene, and the foaming effect can be controlled by changing the reaction temperature and the weight ratio of carbon source to foaming agent. Nitrogen-containing organic micromolecules are taken as the foaming agent, the foaming effect is very good for three-dimensional graphene preparation, moreover, nitrogen atoms are introduced into the graphene, the graphene is doped chemically, compared with that of un-doped graphene, the current transmission performance of chemically-doped graphene is prominently improved, and the practical application value is greatly improved.

The invention discloses a connection metallic device and a wire electronic branch connection element, combination thereof and an insulation shell thereof, wherein the wire electronic branch connection element is combined by an insulation shell and an approximate W-shaped metallic sheet arranged within the insulation shell. The structure of the approximate W-shaped metallic sheet includes a pair of peaks and a concave point between the peaks, and one ends of the two peaks are respectively connected to a pillar section, and forms an opening end at the terminal of the pillar, wherein a traverse slit is formed in a transversely direction of the pillar section connected to the peaks for connecting a metallic device, and a longitudinal slit is formed in a sliver direction of the opening end, and an introduction port is formed at the inlet position of the longitudinal slit for connecting the wire.

The invention discloses a high-current coupler for a storage battery car. The high-current coupler comprises a first coupling piece and a second coupling piece which are in insertion matching with each other; the end surface of one side of the first coupling piece is provided with an insertion connection part which protrudes relative to the end surface of one side of the first coupling piece; twofirst annular insertion grooves are concentrically formed in the insertion connection part; two conductive sheets corresponding to the first annular insertion grooves are arranged on the end surface of the other side of the first coupling piece; a plurality of first electric contact sheets arranged in the first annular insertion grooves are connected onto the conductive sheets; the first electriccontact sheets arranged in the first annular insertion grooves are arranged at intervals in the circumferential direction of the first annular insertion grooves; a pit which is in insertion matching with the insertion connection part is formed in the end surface of one side of the second coupling piece; and two annular second electric contact sheets are concentrically arranged in the pit. The high-current coupler of the invention has the advantages of structural simplicity, convenience in connection and disconnection and reliable insertion connection, and is more suitable for being applied toa large-current storage battery or a battery module and can improve safety performance.

The invention discloses a charge pump circuit and a nonvolatile memory. The charge pump circuit comprises a plurality of boost-stage charge pump units which are connected in series, and each boost-stage charge pump unit comprises an input end; an output terminal; a first capacitor; the first end of the second capacitor is connected with the output end; a third capacitor; the control end of the first switch tube is connected with the first end of the first capacitor, the first access end is connected with the input end, and the second access end is connected with the output end; a first one-way conduction element; the control end of the third switch tube is connected with the input end, the first access end is connected with the first end of the first capacitor, and the second access end is connected with the first end of the third capacitor; in the charge storage stage, the first switch tube is switched on, and the second capacitor is charged; in the charge release stage, the second capacitor provides charges for the next-stage charge pump, and the charges at the control end of the first switching tube are transferred to the third capacitor through the third switching tube. The first switch tube in the charge pump unit can be fully conducted, and the current transmission capability of the charge pump circuit is improved.

The invention provides a car body grounding system, which comprises a conducting layer which is inside the car shell and is partly exposed out of the car body shell; a conductive base which is arranged on the car body shell and is in contact with the conductive layer; an elastic component which is arranged between the conductive base and the car shell and used for fixing the conductive base on the car body shell, wherein the end of the elastic component, away from the conductive base, runs through the car body shell, and a conductive bar is arranged on the other end of the elastic component, on the side, without arranging the conducive base, of the car body shell; an electromagnetic coil which is arranged on the conductive base, one end of the wire of the electromagnetic coil is connected with the positive pole of the car battery, the other end of the wire of the electromagnetic coil is connected with the negative pole of the car load device, the car load device is connected with the conducive base and is connected electrically with the conducive layer, The electromagnetic coil is used for forming a magnetic field that generates adsorption force to the conductive bar after being electrified. The car body grounding system can increase the stability of the car grounding.

The invention discloses a crimping process of an automobile wire harness, which uses a stamping device to crimp the terminal and the automobile wire harness body together, comprising the following technological steps: deoxidizing the wire harness after the wire is opened and drying at a high temperature after the deoxidizing treatment; First, the whole crimping height is adjusted by using the coarse adjusting lever, and then the crimping height is slightly adjusted by using the fine adjusting lever; the wire harness is put into the mold limiting groove, the punching switch is turned on for crimping, and the wire harness and segments after crimping are treated by electroplating anti-corrosion; an electronic tension tester is used to test the tension between the wiring harness body and the terminal, and detect the metallography, voltage drop and contact impedance of the terminal.

The invention provides a preparation method of a piezoelectric nano-generator with all-weather service capability constructed based on an N-doped SiC nano-structure array, and belongs to the technical field of inorganic non-metal material science and energy materials.The preparation method comprises the steps that N-doped silicon carbide is prepared, a self-supporting silicon carbide nano-structure array film is prepared, and the piezoelectric nano-generator with all-weather service capability is obtained. The performance of the silicon carbide nano-structure array film is optimized, and a piezoelectric nano-generator with the all-weather service capacity is constructed. According to the preparation method of the piezoelectric nano-generator which is constructed based on the N-doped SiC nano-structure array and has the all-weather service capacity, the prepared piezoelectric nano-generator shows remarkable electric signal output macroscopically when being subjected to external force in the thickness direction. In addition, the prepared piezoelectric nano generator can still keep stable output after working for 300-500 days under the conditions that the temperature is-80 DEG C to 80 DEG C and the relative humidity is 0-100%.

The invention provides a car body grounding system, which comprises a conducting layer which is inside the car shell and is partly exposed out of the car body shell; a conductive base which is arranged on the car body shell and is in contact with the conductive layer; an elastic component which is arranged between the conductive base and the car shell and used for fixing the conductive base on the car body shell, wherein the end of the elastic component, away from the conductive base, runs through the car body shell, and a conductive bar is arranged on the other end of the elastic component, on the side, without arranging the conducive base, of the car body shell; an electromagnetic coil which is arranged on the conductive base, one end of the wire of the electromagnetic coil is connected with the positive pole of the car battery, the other end of the wire of the electromagnetic coil is connected with the negative pole of the car load device, the car load device is connected with the conducive base and is connected electrically with the conducive layer, The electromagnetic coil is used for forming a magnetic field that generates adsorption force to the conductive bar after being electrified. The car body grounding system can increase the stability of the car grounding.