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40results about How to "Improve shutdown characteristics" patented technology

Ultra scalable high speed heterojunction vertical n-channel MISFETs and methods thereof

ActiveUS7205604B2Superb performanceSuperb scalabilityTransistorDiagnosticsHeterojunctionSemiconductor materials
A method for forming and the structure of a strained vertical channel of a field effect transistor, a field effect transistor and CMOS circuitry is described incorporating a drain, body and source region on a sidewall of a vertical single crystal semiconductor structure wherein a heterojunction is formed between the source and body of the transistor, wherein the source region and channel are independently lattice strained with respect to the body region and wherein the drain region contains a carbon doped region to prevent the diffusion of dopants (boron) into the body. The invention reduces the problem of leakage current from the source region via the heterojunction and lattice strain while independently permitting lattice strain in the channel region for increased mobility via choice of the semiconductor materials.
Owner:GLOBALFOUNDRIES US INC

High speed lateral heterojunction MISFETs realized by 2-dimensional bandgap engineering and methods thereof

InactiveUS6927414B2Superb performanceSuperb scalabilityTransistorSemiconductor/solid-state device manufacturingHeterojunctionCMOS
A method for forming and the structure of a strained lateral channel of a field effect transistor, a field effect transistor and CMOS circuitry is described incorporating a drain, body and source region on a single crystal semiconductor substrate wherein a hetero-junction is formed between the source and body of the transistor, wherein the source region and channel are independently lattice strained with respect the body region. The invention reduces the problem of leakage current from the source region via the hetero-junction and lattice strain while independently permitting lattice strain in the channel region for increased mobility via choice of the semiconductor materials and alloy composition.
Owner:GLOBALFOUNDRIES US INC

Porous layer, laminated body, nonaqueous electrolyte secondary battery member including the porous layer, and nonaqueous electrolyte secondary battery including the porous layer

The present invention provides, as a porous layer that can be used for a member for a non aqueous secondary battery having excellent shutdown characteristics, a porous layer including a polyvinylidene fluoride-based resin, wherein, assuming that a sum of individual amounts of crystal form α and crystal form β contained in the polyvinylidene; fluoride-based resin is 100 mol %, the amount of crystal form α contained in the polyvinylidene fluoride-based resin is not less than 10 mol % and not more than 65 mol %.
Owner:SUMITOMO CHEM CO LTD

Ultra Scalable High Speed Heterojunction Vertical n-Channel Misfets and Methods Thereof

InactiveUS20070241367A1Superb performanceSuperb scalabilityTransistorSolid-state devicesHeterojunctionSemiconductor materials
A method for forming and the structure of a strained vertical channel of a field effect transistor, a field effect transistor and CMOS circuitry is described incorporating a drain, body and source region on a sidewall of a vertical single crystal semiconductor structure wherein a hetero-junction is formed between the source and body of the transistor, wherein the source region and channel are independently lattice strained with respect to the body region and wherein the drain region contains a carbon doped region to prevent the diffusion of dopants (boron) into the body. The invention reduces the problem of leakage current from the source region via the hetero-junction and lattice strain while independently permitting lattice strain in the channel region for increased mobility via choice of the semiconductor materials.
Owner:GLOBALFOUNDRIES INC

Polyethylene composition for manufacturing lithium battery diaphragm

The invention discloses a polyethylene composition for manufacturing a lithium battery diaphragm. The composition is prepared by blending a polyethylene material and a diluent. Polyethylene resins of different molecular weights are taken as polyethylene materials for manufacturing a lithium battery diaphragm, and are uniformly mixed and blended with a diluent to form a polyethylene composition, so that the lithium battery diaphragm is prepared. The polyethylene material used in the invention is an ordinary super-high-molecular-weight polyethylene resin, a super-high-molecular-weight polyethylene resin or a high-density polyethylene resin. The battery diaphragm prepared from the polyethylene composition has low requirement on the accuracy of manufacturing equipment and high production efficiency, has high tearing strength, high piercing resistance and smaller thickness while keeping the high porosity, high insulating property and high shutoff property of an ordinary polyethylene lithium battery, and is suitable for manufacturing a smaller lithium battery.
Owner:INST OF CHEM CHINESE ACAD OF SCI

Double Port Pressure Regulator with Floating Seat

A double port regulator assembly includes a first fluid port and a second fluid port. A fixed valve seat assembly is disposed proximate the first fluid port and a floating valve seat assembly is disposed proximate the second fluid port. A first valve plug cooperates with the fixed valve seat assembly to open and close the first fluid port and a second valve lug cooperates with the floating valve seat assembly to open and close the second fluid port. The floating valve seat assembly includes a floating valve seat that is movable with respect to the fixed valve seat.
Owner:EMERSON PROCESS MANAGEMENT REGULATOR TECH INC

Insulated gate bipolar translator (IGBT) with terminal deep energy level impurity layer

InactiveCN102779840AImprove reliabilityReduce high temperature leakage currentSemiconductor devicesCharge carrierDegree of ionization
The invention discloses an insulated gate bipolar translator (IGBT) with a terminal deep energy level impurity layer, and belongs to the technical field of semiconductor power devices. Based on the conventional Planar field stop-insulated gate bipolar translator (FS-IGBT), a deep energy level impurity layer (15) is injected into a terminal drift area (14); according to the deep energy level impurity layer (15), the degree of ionization of the deep energy level impurities is raised along with the raise of the temperature of the device, and the concentration of the impurities is greatly increased; when the IGBT is turned off, the hole emission efficiency of a P+ current collection area in a terminal area is effectively reduced by carrier concentration added in the terminal drift area is effectively reduced, and alpha PNP (plug-and-play) of a parasitic PNP transistor is reduced, so that high-temperature leakage current of a device is effectively reduced; and electronic concentration added in the drift area and a hole injected into the P+ current collection area are quickly compounded, and the deep energy level impurities serves as a compounding center, so that the compounding of the electronic hole is quickened, the on / off property is effectively improved, and the reliability of the IGBT is improved.
Owner:UNIV OF ELECTRONICS SCI & TECH OF CHINA +1

Tunnel IGBT with anode in short circuit

An anode-short tunnel pump IGBT belongs to the technical field of semiconductor power devices. With an anode-short structure and a tunnel pump structure simultaneously introduced into a traditional IGBT, or a tunnel pump structure into an anode-short IGBT, or an anode-short structure into a tunnel pump IGBT, the invention gives the advantages of both the anode-short IGBT and the tunnel pump IGBT to the anode-short tunnel pump IGBT so as to improve the turn-off characteristic of the device and lower the conductive voltage drop of the device. The invention can better reconcile the positive saturation voltage drop with the turn-off time, and optimize the conductive characteristic of the device, so that the invention is suitable in particular for application environments characterized by high voltage, heavy current and high frequency.
Owner:UNIV OF ELECTRONICS SCI & TECH OF CHINA

Battery separator and method for producing same

A battery separator which is a laminated polyolefin microporous membrane, comprising a polyolefin microporous membrane, and a modifying porous layer comprising a water-soluble resin or water-dispersible resin, and fine particles, the modifying porous layer being laminated on at least one surface of the polyolefin microporous membrane, wherein the polyolefin microporous membrane comprises a polyethylene resin and has (a) a shutdown temperature (a temperature at which an air resistance measured while heating the polyolefin microporous membrane at a temperature rise rate of 5°C / min reaches 1 × 10 5 sec / 100 cc) of 135°C or lower, (b) a rate of air resistance change (a gradient of a curve representing dependency of the air resistance on temperature at an air resistance of 1 × 10 4 sec / 100 cc) of 1 × 10 4 sec / 100 cc / °C or more, (c) a transverse shrinkage rate at 130°C (measured by thermomechanical analysis under a load of 2 gf at a temperature rise rate of 5°C / min) of 20% or less, and a thickness of 16 µm or less, the shutdown temperature difference between the polyolefin microporous membrane and the laminated polyolefin microporous membrane being 4.0°C or less. A method of producing the same. Provided is a battery separator with excellent adhesion and shutdown properties comprising a modifying porous layer and a polyolefin microporous membrane.
Owner:TORAY IND INC

Polyethylene microporous membrane and process for manufacturing same

A polyethylene microporous membrane and a manufacturing method thereof are provided. The polyethylene microporous membrane exhibits a Gurley air permeability of 1 to 1,000 sec / 100mL / 25mum and in which the total length of widths of waves in the widthwise direction of the microporous membrane is at most one-third of the overall width of the microporous membrane. The present invention provides the polyethylene microporous membrane having excellent flatness without impairing the other important physical properties such as permeability.
Owner:TORAY IND INC

Method for producing polyolefin microporous membrane

A method for producing a microporous polyolefin membrane by extruding a melt blend comprising a polyethylene resin, polypropylene having a mass-average molecular weight of 1 × 10 5 or more and an ethylene content of 5% by mass or less, and a membrane-forming solvent through a die, slowly cooling the resultant extrudate to form a gel-like sheet, stretching the gel-like sheet, and removing the above membrane-forming solvent, the slow-cooling speed of the extrudate being 30°C / second or less.
Owner:TONEN CHEM CORP

Insulated gate bipolar transistor (IGBT) with deep energy level impurity implantation

The invention discloses an insulated gate bipolar transistor (IGBT) with deep energy level impurity implantation and belongs to the technical field of semiconductor power devices. Deep energy level N-type impurities are implanted into an N-drift region (8) on the basis of the traditional Planar FS-IGBT. According to the characteristic that the ionization degree of the deep energy level impurities is raised and the impurity concentration is raised along with the temperature increase, the parasitic PNP transistor alpha PNP of the IGBT can be effectively reduced, so that the high-temperature leakage current of the IGBT is reduced, and the overall loss of the IGBT is reduced further; and moreover, the electron concentration increased in the N-drift region (8) and holes in the drift region are accelerated and compounded, and the deep energy level impurity self is a deathnium, the electron hole recombination is accelerated, the turnoff process of the IGBT is reduced, the turnoff characteristics are effectively improved, and the reliability of the IGBT is improved.
Owner:UNIV OF ELECTRONIC SCI & TECH OF CHINA +1

Laminated polyolefin microporous membrane, battery separator, and production method thereof

A laminated polyolefin microporous membrane is disclosed. The laminated polyolefin microporous membrane includes a first polyolefin microporous membrane, and a second polyolefin microporous membrane. A shutdown temperature of the laminated polyolefin microporous membrane is from 128° C. to 135° C., an air permeation resistance increase rate from 30° C. to 105° C. per 20 μm of thickness of the laminated polyolefin microporous membrane is less than 1.5 sec / 100 cc Air / ° C., and a variation range in an F25 value of the laminated polyolefin microporous membrane in a longitudinal direction is not greater than 1 MPa. The F25 value represents a value determined by dividing the load at 25% elongation of a sample of the laminated polyolefin microporous membrane as measured with a tensile tester by the cross-sectional area of the sample polyolefin microporous membrane.
Owner:TORAY IND INC

Low-on-resistance trench silicon carbide power device and manufacturing method thereof

The invention discloses a low-on-resistance trench silicon carbide power device and a manufacturing method thereof. The cellular structure comprises an N-type substrate, an N-type epitaxial layer anda trench; a graphene layer is arranged on the side wall of the trench; a gate oxide layer and a polycrystalline silicon gate are arranged in the trench; a passivation layer is arranged above the polycrystalline silicon gate; a P-type body region, an N-type source region and a P-type body contact region are arranged on the two sides of the trench; a P-type shielding layer is arranged below the graphene layer; source metal is arranged on the upper surface of the source region; and drain metal is arranged on the lower surface of the substrate. According to the power device, an electron beam method is used, metal and a carbon source gas are used for assisting, and the graphene layer grows on the side wall of the trench. The power device is characterized in that the graphene layer on the side wall of the trench reduces the on resistance. The shielding layer below the graphene layer shields the current flowing through the graphene layer when the device is in an off state, and the turn-off characteristic of the device is improved. The growth of the graphene layer is assisted by metal nickel and the carbon source gas, so that the uniformity, the thickness and the growth rate of the graphene layer are improved.
Owner:SOUTHEAST UNIV

Longitudinal conduction GaN (gallium nitride) normally-off MISFET (metal-insulator-semiconductor field effect transistor) device and manufacturing method thereof

The invention relates to a longitudinal conduction GaN (gallium nitride) normally-off MISFET (metal-insulator-semiconductor field effect transistor) device and a manufacturing method of the MISFET device, wherein an epitaxial layer comprises a primary epitaxial growth n type light-doped GaN layer and a secondary epitaxial layer growing in a selection area of the light-doped GaN layer; the secondary epitaxial layer comprises a first impurity filtering layer, an electron blocking layer, a second impurity filtering layer, a non-doped epitaxial GaN layer and a heterostructure barrier layer from bottom to top; a groove channel is formed after secondary epitaxial growth; an insulating layer covers the surface of the groove channel and the surface of the heterostructure barrier layer; a grid electrode covers the groove channel on the insulating layer; two source electrode areas are respectively formed at two ends of the insulating layer by etching; two pieces of ohmic metal are respectively arranged at the source electrode areas by evaporation, so that source electrodes contacted with the heterostructure barrier layer can be formed; a piece of drain electrode ohmic contact metal is arranged at the back of a conductive GaN substrate. The MISFET device is simple in structure and high in process repeatability and reliability, and is capable of effectively inhibiting the diffusion of impurities in a secondary growth interface or the electron blocking layer, so that the electrical properties of 2DEG of the electron blocking layer and a heterostructure channel can be optimized.
Owner:SHANGHAI XINYUANJI SEMICON TECH

Array substrate, preparation method thereof, display panel and device

The invention discloses an array substrate, a preparation method thereof, a display panel and a device. The array substrate comprises a pixel circuit, the pixel circuit comprises a first transistor and a second transistor, the first transistor comprises a first active layer, the second transistor comprises a second active layer, and both the first active layer and the second active layer comprisesilicon; the array substrate further comprises a first type inorganic layer, a second type inorganic layer and a first via hole, the first via hole is located above the first active layer and at leastpenetrates through the second type inorganic layer, and the hydrogen ion concentration in the first active layer is smaller than that in the second active layer. The first active layer is subjected to high-temperature processing through the first via hole, so that the hydrogen ion concentration in the first active layer is smaller than that in the second active layer, the high-temperature processing frequency of the second transistor is reduced while good performance of the first transistor is guaranteed, and it is guaranteed that the second transistor is small in sub-threshold swing, good inturn-off characteristic and small in leakage current; and good overall characteristics of the pixel circuit are ensured.
Owner:XIAMEN TIANMA MICRO ELECTRONICS

Polyolefin microporous membrane, production method thereof, separator for non-aqueous electrolyte secondary battery, and non-aqueous electrolyte secondary battery

ActiveUS20170263906A1Superior safetyHigh puncture strengthSecondary cellsCell component detailsPolyolefinNon aqueous electrolytes
The present invention provides a microporous membrane having an excellent balance of temperature characteristics, shrinkage characteristics, permeability, and strength, and thereby realizes a separator for a non-aqueous electrolyte secondary battery and a non-aqueous electrolyte secondary battery, having excellent performance and excellent safety. A polyolefin microporous membrane having;a temperature difference not less than 7.2° C. between a shutdown shrinkage temperature and a maximum shrinkage temperature in a TD measured by TMA;a shrinkage rate difference less than 25% between a shutdown shrinkage rate and a maximum shrinkage rate in the TD;a pin puncture strength at a membrane thickness of 16 μm being not less than 400 gf; anda ratio of pin puncture strength to air permeation resistance at a membrane thickness of 16 μm being from 2.0 to 4.0 (gf / (sec / 100 cc)).
Owner:TORAY IND INC

Polyethylene composition for manufacturing lithium battery high-strength high-fusing temperature diaphragm

InactiveCN105255201ASuperior tensile properties and elongation at breakImprove stretch film forming propertiesCell component detailsHigh-density polyethylenePolymer chemistry
The invention discloses a polyethylene composition for preparing a power lithium battery diaphragm, and the composition is formed by blending polyethylene resin and diluent. According to an ultra-high molecular weight polyethylene / high density polyethylene / linear low density polyethylene / diluent system, the character of mechanical property of the diaphragm can be greatly improved by means of ultra-high molecular weight polyethylene, and the mechanical strength of a lithium battery diaphragm finished product is improved. Linear low density polyethylene can produce enough free radicals under low irradiation intensity, a polyethylene chain of a long molecular chain is protected, and the lithium battery diaphragm finished product keeps the excellent mechanical property and has the high fusing-off temperature. According to the lithium battery diaphragm prepared through the polyethylene composition, high porosity, high insulativity and good turn-off characteristic of an ordinary polyethylene lithium battery diaphragm are kept, high tearing strength, high puncture resistance strength and high-fusing temperature are achieved, and the polyethylene composition is suitable for manufacturing power lithium batteries.
Owner:INST OF CHEM CHINESE ACAD OF SCI

Polyolefin microporous film and method for manufacturing same, separator for nonaqueous electrolyte secondary cell, and nonaqueous electrolyte secondary cell

Provided is a polyolefin microporous film having pores with small diameters and excellent shutdown characteristics, and which is suitable for a separator for a nonaqueous electrolyte secondary cell. The polyolefin microporous film is characterized in that the difference between the shutdown start temperature in the MD direction and the temperature at maximum shrinkage in the MD direction is 8.6 DEG C or greater, and the maximum pore diameter thereof is less than 0.036 [Mu]m. Also provided is a method for manufacturing the polyolefin microporous film, characterized by comprising melt-kneading and molding into a sheet shape a plasticizer and a polyolefin resin including an ultrahigh-molecular-weight polyolefin, stretching the resultant sheet in the MD direction and performing simultaneous biaxial stretching thereof, and then drying the stretched sheet.
Owner:TORAY IND INC

Novel driving topology and driving method and crosstalk suppression method thereof

The invention discloses a novel driving topology and a driving method and a crosstalk suppression method thereof, which are suitable for a silicon carbide metal-oxide semiconductor field effect transistor of a half-bridge circuit. The novel driving topology comprises a primary side logic processing unit, two isolation units, two secondary side logic processing units, two multi-level driving circuits, two driving resistance networks and two turn-off drain current detection feedback circuits. According to the present invention, the next multi-level pulse signal is determined according to the feedback information of a detection circuit, the feedback self-adaption can be detected to optimize the turn-off characteristic, and the influence of inherent detection circuit hardware delay of the detection circuit is effectively eliminated through the subtraction of the secondary side logic control units. Therefore, the turn-off transient oscillation and voltage overshoot of a half-bridge circuit switching tube are suppressed. When an active tube acts, the influence of crosstalk is suppressed by adjusting the grid-source electrode level of a passive tube, so that parasitic opening and grid-source electrode negative voltage overshoot are prevented, the use reliability of the device is improved, and the service life of the device is prolonged.
Owner:BEIJING JIAOTONG UNIV

Polyolefin microporous membrane, production method thereof, separator for non-aqueous electrolyte secondary battery, and non-aqueous electrolyte secondary battery

ActiveUS10658640B2High pin puncture strengthExcellent balance of strength and permeabilityCell seperators/membranes/diaphragms/spacersFinal product manufacturePolyolefinPhysical chemistry
The present invention provides a microporous membrane having an excellent balance of temperature characteristics, shrinkage characteristics, permeability, and strength, and thereby realizes a separator for a non-aqueous electrolyte secondary battery and a non-aqueous electrolyte secondary battery, having excellent performance and excellent safety. A polyolefin microporous membrane having;a temperature difference not less than 7.2° C. between a shutdown shrinkage temperature and a maximum shrinkage temperature in a TD measured by TMA;a shrinkage rate difference less than 25% between a shutdown shrinkage rate and a maximum shrinkage rate in the TD;a pin puncture strength at a membrane thickness of 16 μm being not less than 400 gf; anda ratio of pin puncture strength to air permeation resistance at a membrane thickness of 16 μm being from 2.0 to 4.0 (gf / (sec / 100 cc)).
Owner:TORAY IND INC

Porous polyolefin film

This porous polyolefin film: has a shutdown temperature of 133 DEG C or lower; a porosity of 41% or higher; a value of 12,500 or higher for (longitudinal (MD) direction tensile elongation (%) * longitudinal (MD) direction tensile strength (MPa) + width (TD) direction tensile elongation (%) * width (TD) direction tensile strength (MPa)) / 2; and satisfies formula (1),where TSD (DEG C) is the shutdowntemperature and Tm (DEG C) is the lowest melting point of the melting points of respective layers. Formula (1) is Tm-TSD >= 0. Provided is a porous polyolefin film that offers excellent safety against internal short-circuit, thermal runaway, or the like without lowering the permeability of conventional microporous membranes.
Owner:TORAY IND INC
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