40 results about "Degree of ionization" patented technology

The present invention provides a container for retort packaging comprising a laminated film having an outermost layer comprising a layer formed of a cross-linked structure containing ester bonds between poly(meth)acrylic acid (A) and polyalcoholic polymer (B); a resin composition having at least the chemical structures (X) [poly(meth)acrylic acid (A) residue], (Y) [poly(meth)acrylic acid (A)-polyalcoholic polymer (B) residue] and (Z) [metal cross-linked ionic residues], wherein the degree of esterification defined by the equation: degree of esterification=c / (b+c+d) is from 0.01 to 0.5 and the degree of ionization defined by the equation: degree of ionization=c / (b+c+d) is from 0.01 to 0.9 (wherein b, c and d represent the molar ratios of the carbon-oxygen double bond in the chemical structure of the resin composition; and a gas barrier film comprising the same.

The invention relates to a device (10) for sputtering at least one selected materialonto a substrate (5) and bringing about a reaction of this material, comprising a vacuum chamber (11), in which a substrate holder (12) is arranged, at least one magnetron sputtering mechanism (15), which is arranged in a workstation close to the substrate holder (12) and which has a target of the selected material which is suitable for producing a first plasma for sputtering at least one material onto the substrate (5), as well as a secondary plasma mechanism (16) for producing a secondary plasma, which is arranged in the workstation close to the magnetron sputtering mechanism (15) and close to the substrate holder (12), the sputtering mechanism (15) and the secondary plasma mechanism (16) forming a sputtering zone and an activation zone. At least two electromagnets (1, 3) and / or radiallymagnetized toric magnets as well as at least one magnetic multipole (2), which is formed from a plurality of permanent magnets, are arranged to produce magnetic fields to include the secondary plasma. The invention also relates to a method for coating a substrate, in which firstly materialis deposited on a substrate by means of a sputtering process and the deposited materialthen reacts in a plasma, which contains the necessary reactive species, to form a compound, wherein the plasma density and the degree of ionization of the plasma are increased with the aid of magnetic fields, which are produced by at least two electromagnets (1, 3) and / or radially magnetized toric magnets as well as at least one magnetic multipole (2), which is formed from a plurality of permanent magnets.

A method for inducing chemical reactions using X-ray radiation comprises generating an irradiation volume within the interior of a reaction vessel by introducing X-ray radiation into the volume, in which two or more reactants are introduced. With respect to the two or more reactants and any subsequently created intermediate reactant or reactants, the aggregate extent to which the foregoing reactants are to be ionized to any degree is selectively controlled, and the average degree of ionization in the irradiation volume, from partial to total, of that portion of the foregoing reactants which is to be ionized is selectively controlled, through control of the fluence and energy of the X-ray radiation, to thereby induce selective reactions of reactants to occur in the irradiation volume. One or more reactants may be delivered through a double-walled pipe containing X-ray shielding to prevent their premature irradiation before being injected into the irradiation volume.

An electrically and magnetically enhanced ionized physical vapor deposition (I-PVD) magnetron apparatus and method is provided for sputtering material from a cathode target on a substrate, and in particular, for sputtering ceramic and diamond-like coatings. The electrically and magnetically enhanced magnetron sputtering source has unbalanced magnetic fields that couple the cathode target and additional electrode together. The additional electrode is electrically isolated from ground and connected to a power supply that can generate positive, negative, or bipolar high frequency voltages, and is preferably a radio frequency (RF) power supply. RF discharge near the additional electrode increases plasma density and a degree of ionization of sputtered material atoms.

The invention relates to an IGBT with a terminal deep-level impurity layer, which belongs to the technical field of semiconductor power devices. Based on the traditional Planar FS-IGBT, the invention injects a deep energy level impurity layer (15) into the terminal drift region (14). In the deep-level impurity layer (15), as the temperature of the device increases, the ionization degree of the deep-level impurities increases, and the impurity concentration increases significantly. When the IGBT is turned off, the increased carrier concentration in the terminal drift region is effectively reduced. The hole emission efficiency of the P+ collector region in the small terminal region reduces the parasitic PNP transistor αPNP, thereby effectively reducing the high-temperature leakage current of the device; the increased electron concentration in the drift region and the accelerated recombination of holes injected into the P+ collector region, and deep energy The level impurity itself is a recombination center, further accelerating the recombination of electrons and holes, effectively improving the turn-off characteristics and improving the reliability of the IGBT.

The invention relates to azonium ionized poly(styrene-b-isobutylene-b-styrene) triblock copolymer and a preparation method thereof. Using poly(styrene-b-isobutylene-b-styrene) as the base material, it is prepared through chloromethylation and nitrogenium ionization in sequence. The nitrogen-containing onium ion salt substituted poly(styrene-b-isobutylene-b-styrene) triblock copolymer prepared by the method of the present invention has high ion content, high ionization degree, high ionization reaction efficiency, and the preparation method Simple.