40 results about "Degree of ionization" patented technology

The present invention provides a container for retort packaging comprising a laminated film having an outermost layer comprising a layer formed of a cross-linked structure containing ester bonds between poly(meth)acrylic acid (A) and polyalcoholic polymer (B); a resin composition having at least the chemical structures (X) [poly(meth)acrylic acid (A) residue], (Y) [poly(meth)acrylic acid (A)-polyalcoholic polymer (B) residue] and (Z) [metal cross-linked ionic residues], wherein the degree of esterification defined by the equation: degree of esterification=c / (b+c+d) is from 0.01 to 0.5 and the degree of ionization defined by the equation: degree of ionization=c / (b+c+d) is from 0.01 to 0.9 (wherein b, c and d represent the molar ratios of the carbon-oxygen double bond in the chemical structure of the resin composition; and a gas barrier film comprising the same.

The invention discloses an insulated gate bipolar translator (IGBT) with a terminal deep energy level impurity layer, and belongs to the technical field of semiconductor power devices. Based on the conventional Planar field stop-insulated gate bipolar translator (FS-IGBT), a deep energy level impurity layer (15) is injected into a terminal drift area (14); according to the deep energy level impurity layer (15), the degree of ionization of the deep energy level impurities is raised along with the raise of the temperature of the device, and the concentration of the impurities is greatly increased; when the IGBT is turned off, the hole emission efficiency of a P+ current collection area in a terminal area is effectively reduced by carrier concentration added in the terminal drift area is effectively reduced, and alpha PNP (plug-and-play) of a parasitic PNP transistor is reduced, so that high-temperature leakage current of a device is effectively reduced; and electronic concentration added in the drift area and a hole injected into the P+ current collection area are quickly compounded, and the deep energy level impurities serves as a compounding center, so that the compounding of the electronic hole is quickened, the on / off property is effectively improved, and the reliability of the IGBT is improved.

An ionization air purification system for the passenger cabin of vehicles, which modifies the degree of ionization by modifying the energy levels applied to an air ionization device having a tubular dielectric member or a planar dielectric member or ionization source proportional to the change in air flow dynamics and air quality. In one embodiment, an ionization air purification system for the passenger cabin of a vehicle is disclosed. The system includes an ionization device for purifying the air prior to entering into the passenger cabin of the vehicle while minimizing the production of ozone as a by-product; and means for modifying the degree of ionization by modifying the energy levels applied to the ionization tube or ionization source proportional to the change in air flow dynamics or air quality.

The invention relates to a device (10) for sputtering at least one selected materialonto a substrate (5) and bringing about a reaction of this material, comprising a vacuum chamber (11), in which a substrate holder (12) is arranged, at least one magnetron sputtering mechanism (15), which is arranged in a workstation close to the substrate holder (12) and which has a target of the selected material which is suitable for producing a first plasma for sputtering at least one material onto the substrate (5), as well as a secondary plasma mechanism (16) for producing a secondary plasma, which is arranged in the workstation close to the magnetron sputtering mechanism (15) and close to the substrate holder (12), the sputtering mechanism (15) and the secondary plasma mechanism (16) forming a sputtering zone and an activation zone. At least two electromagnets (1, 3) and / or radiallymagnetized toric magnets as well as at least one magnetic multipole (2), which is formed from a plurality of permanent magnets, are arranged to produce magnetic fields to include the secondary plasma. The invention also relates to a method for coating a substrate, in which firstly materialis deposited on a substrate by means of a sputtering process and the deposited materialthen reacts in a plasma, which contains the necessary reactive species, to form a compound, wherein the plasma density and the degree of ionization of the plasma are increased with the aid of magnetic fields, which are produced by at least two electromagnets (1, 3) and / or radially magnetized toric magnets as well as at least one magnetic multipole (2), which is formed from a plurality of permanent magnets.

A method for inducing chemical reactions using X-ray radiation comprises generating an irradiation volume within the interior of a reaction vessel by introducing X-ray radiation into the volume, in which two or more reactants are introduced. With respect to the two or more reactants and any subsequently created intermediate reactant or reactants, the aggregate extent to which the foregoing reactants are to be ionized to any degree is selectively controlled, and the average degree of ionization in the irradiation volume, from partial to total, of that portion of the foregoing reactants which is to be ionized is selectively controlled, through control of the fluence and energy of the X-ray radiation, to thereby induce selective reactions of reactants to occur in the irradiation volume. One or more reactants may be delivered through a double-walled pipe containing X-ray shielding to prevent their premature irradiation before being injected into the irradiation volume.

An electrically and magnetically enhanced ionized physical vapor deposition (I-PVD) magnetron apparatus and method is provided for sputtering material from a cathode target on a substrate, and in particular, for sputtering ceramic and diamond-like coatings. The electrically and magnetically enhanced magnetron sputtering source has unbalanced magnetic fields that couple the cathode target and additional electrode together. The additional electrode is electrically isolated from ground and connected to a power supply that can generate positive, negative, or bipolar high frequency voltages, and is preferably a radio frequency (RF) power supply. RF discharge near the additional electrode increases plasma density and a degree of ionization of sputtered material atoms.

The invention relates to a mass spectrometer comprising a laser system for mass-spectrometric analysis with ionization of analyte molecules in a sample by matrix-assisted laser desorption. A mass spectrometer with a pulsed UV laser system produces a spatially distributed spot pattern with peaks of uniform energy density on the sample, increasing thereby the degree of ionization for analyte ions as compared to conventional spot patterns. The spot pattern with peaks of uniform energy density can be produced by homogeneous illumination of a pattern generator, for example a lens array. The homogeneous illumination can be generated by a low-cost beam-shaping element, which does not act on the UV beam but on the original infrared beam, in conjunction with changes to the beam cross-section and beam profile brought about by the nonlinear conversion crystals. This beam shaping not only produces a beam profile which illuminates the pattern generator homogeneously with low losses, but at the same time increases the efficiency of the frequency multiplication and the lifetime of the conversion crystals so that cost savings are achieved because less laser energy is required and the lifetime is increased.

The invention relates to mass spectrometers with an ion source, comprising a UV laser system for mass spectrometric analyses with ionization of analyte molecules in a sample by matrix-assisted laser desorption, which, with very low energy losses, can produce a spatially distributed spot pattern with several intensity peaks of equal height, thus making it possible to achieve an optimum degree of ionization of analyte ions for any task. Such a spot pattern can be generated from the UV beam with high transverse coherence, using a combination of a lens array and a lens, provided that the lens array satisfies a mathematical condition for separation of the micro-lenses from each other (pitch) and their focal length. For example, a lens array with square or round lenses produces a pattern of nine and five spots, respectively. The lens arrays are inexpensive and do not require any lateral adjustment in this arrangement.

The plasma is formed between electrodes to be energized from an electric power source, containing a partially ionized mass having a luminescence region including neutral atoms (NA), primary electrons (PE), secondary electrons (SE), and ions.The method comprises the interspersed steps of: accelerating the primary electrons (PE) toward one of said electrodes (10) polarized by a short, positive, high voltage pulse, impacting primary electrons (PE) against said electrode (10) and ejecting secondary electrons (SE) from it; subsequently, accelerating the secondary electrons (SE) toward the luminescence region by polarization of said electrode (10) by a negative voltage with a lower voltage pulse colliding the secondary electrons with neutral atoms (NA) and producing positive ions (PI) and derived electrons (DE); the negative pulse must have a period of time sufficient to accelerate the positive ions (PI) of the luminescent region towards the electrodes 10, striking the surface of said electrodes; repeating the previous steps in order to obtain a steady state plasma with a desired degree of ionization. The control of the intensity and the period of the positive and negative pulses allow the control of the degree of ionization and the volume of the luminescent region of the plasma.

A sputtering head comprises a receiving area for a sputtering target (target receptacle). The sputtering head comprises one or more magnetic field sources so as to generate a stray magnetic field. The magnetic north and the magnetic south of at least one magnetic field source, between which the stray field forms, are located 10 mm or less, preferably 5 mm or less, and particularly preferably approximately 1 mm apart. It was found that, notably when sputtering at a high sputtering gas pressure of 0.5 mbar or more, the degree of ionization of the sputtering plasma, and consequently also the ablation rate of the sputtering target, can be locally adjusted by such a locally effective magnetic field. This allows the thicknesses of the layers that are obtained to be more homogeneous over the surface of the substrate. Advantageously, the sputtering head additionally comprises a solid state insulator, which surrounds the base body comprising the target receptacle and the sputtering target (all connected to potential) and electrically insulates the same from the shield that spatially limits the material ablation to the sputtering target (connected to ground).

The invention relates to an IGBT with a terminal deep-level impurity layer, which belongs to the technical field of semiconductor power devices. Based on the traditional Planar FS-IGBT, the invention injects a deep energy level impurity layer (15) into the terminal drift region (14). In the deep-level impurity layer (15), as the temperature of the device increases, the ionization degree of the deep-level impurities increases, and the impurity concentration increases significantly. When the IGBT is turned off, the increased carrier concentration in the terminal drift region is effectively reduced. The hole emission efficiency of the P+ collector region in the small terminal region reduces the parasitic PNP transistor αPNP, thereby effectively reducing the high-temperature leakage current of the device; the increased electron concentration in the drift region and the accelerated recombination of holes injected into the P+ collector region, and deep energy The level impurity itself is a recombination center, further accelerating the recombination of electrons and holes, effectively improving the turn-off characteristics and improving the reliability of the IGBT.

The invention relates to a method for promoting the ionization of benzoic acid derivatives based on Ag NPs. The adopted technical scheme is: dissolving benzoic acid derivatives in absolute ethanol, then adding Ag NPs catalyst, and ionizing reaction under light. In the present invention, there is no conventional addition of alkali in this system, but it can be clearly seen that the degree of ionization is gradually increasing, so the "racemate of Lewis acid-base"-Ag NPs fully exerts the role of alkali, and the more critical It is that it acts as a boost far beyond that of the base base. Moreover, the present invention introduces surface-enhanced Raman spectroscopy technology, and monitors the system through this simple and efficient means. Moreover, the present invention clarifies the flow direction of electrons. More importantly, the present invention regulates the generation of hot electrons based on the electron-withdrawing effect, prompting the system to generate more hot electrons, and realizing reactions that cannot occur in conventional organic chemistry.

The invention relates to azonium ionized poly(styrene-b-isobutylene-b-styrene) triblock copolymer and a preparation method thereof. Using poly(styrene-b-isobutylene-b-styrene) as the base material, it is prepared through chloromethylation and nitrogenium ionization in sequence. The nitrogen-containing onium ion salt substituted poly(styrene-b-isobutylene-b-styrene) triblock copolymer prepared by the method of the present invention has high ion content, high ionization degree, high ionization reaction efficiency, and the preparation method Simple.

The invention discloses an ion deflection device and method, which belong to the technical field of ion deflection. The ion deflection device and method include an ion generation cabin, a high voltage cabin is installed on the upper end of the ion generation cabin, and a The ion deflection chamber, the outer wall of the upper end of the ion deflection chamber is fixedly connected with a No. 1 position adjustment mechanism. In the present invention, the water molecules absorbed by the silica gel layer are excited by the electrons of the corona discharge and fly out, thereby forming water clusters, so forming longer-lived and heavier cluster ions, the more water cluster molecules formed by surrounding the ions The more stable the multi-ion, the humidity detector detects the humidity of the gas inside the detection chamber, so as to facilitate the control of the degree of ionization in the ion generation cabin according to the humidity; by measuring the proportional relationship between the displacement value of the push rod and the ion deviation angle, the The degree of ion deviation is accurately estimated and controlled, which is suitable for widespread promotion and use.