Tunnel IGBT with anode in short circuit
An anode short-circuit and tunneling technology, which is applied in circuits, electrical components, semiconductor devices, etc., can solve problems such as the rise of conduction voltage drop, and achieve the effects of low conduction voltage drop, excellent turn-off characteristics, and excellent conduction characteristics
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[0023] The anode-short-circuited tunnel pump IGBT of the present invention can greatly optimize the contradictory relationship between forward saturation voltage drop and turn-off time.
[0024] A tunnel-pumped IGBT with an anode short-circuit, such as Figure 4 As shown, including gate 1, isolation dielectric 2, emitter 3, N + Source region 4, P-type base region 5, N - Drift region 6 and collector electrode 11. It is characterized in that it also includes an anode short circuit structure layer and a tunnel pump structure layer. The anode short circuit structure layer consists of a P + District 9 and First N + Zones 10 are formed side by side in the lateral direction; the tunnel pump structure layer is composed of the second N + Zone 8 and surrounding the second N +The P-type region 7 of the region 8 is formed; the anode short-circuit structure layer is located between the collector electrode 11 and the tunnel pump structure layer, and the tunnel pump structure layer is ...
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