Insulated gate bipolar transistor (IGBT) with deep energy level impurity implantation

Abstract

The invention discloses an insulated gate bipolar transistor (IGBT) with deep energy level impurity implantation and belongs to the technical field of semiconductor power devices. Deep energy level N-type impurities are implanted into an N-drift region (8) on the basis of the traditional Planar FS-IGBT. According to the characteristic that the ionization degree of the deep energy level impurities is raised and the impurity concentration is raised along with the temperature increase, the parasitic PNP transistor alpha PNP of the IGBT can be effectively reduced, so that the high-temperature leakage current of the IGBT is reduced, and the overall loss of the IGBT is reduced further; and moreover, the electron concentration increased in the N-drift region (8) and holes in the drift region are accelerated and compounded, and the deep energy level impurity self is a deathnium, the electron hole recombination is accelerated, the turnoff process of the IGBT is reduced, the turnoff characteristics are effectively improved, and the reliability of the IGBT is improved.

Description

technical field [0001] The invention belongs to the technical field of semiconductor power, and relates to an insulated gate bipolar transistor (Insulate Gate Bipolar Transistor, IGBT for short). Background technique [0002] Insulated-gate bipolar transistor (IGBT), as a representative of power electronic devices, is the product of choice for improving performance and energy-saving indicators of the whole machine. IGBT not only has the advantages of high input impedance, low control power, simple driving circuit and high switching speed of MOSFET, but also has the advantages of high current density, low saturation voltage and strong current handling ability of bipolar power transistor. Therefore, the three major characteristics of IGBT power devices are high voltage, high current, and high speed, which are unmatched by other power devices. Therefore, it is an ideal switching device in the field of power electronics. IGBT products combine three technical advantages of high ...

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Problems solved by technology

[0003] When the IGBT is forward-conducting, the positive gate voltage makes the channel open, and the emitter electrons flow through the channel to the drift region. Due to the forward bias of the collector, a large number of holes in the collector region flood into the drift region, and the drift region A large number of electrons have a conductance modulation effect, which can make the turn-on voltage drop of the IGBT much smaller than that of the VDMOS; when the IGBT is turned off, the gate voltage is negative voltage or zero voltage, the emitter electrons suddenly disappear, and the collector is high Voltage, a large number of holes continue to flow to the drift region, forming a large hole current, at this time the IGBT is in the reverse blocking state, due to the parasitic PNP tube α PNP As the temperature increases sharply, the leakage current of the IGBT increases significantly with the increase of temperature. High temperature, high voltage and high current can easily cause avalanche breakdown or even burn out of the device.

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