Novel driving topology and driving method and crosstalk suppression method thereof

Abstract

The invention discloses a novel driving topology and a driving method and a crosstalk suppression method thereof, which are suitable for a silicon carbide metal-oxide semiconductor field effect transistor of a half-bridge circuit. The novel driving topology comprises a primary side logic processing unit, two isolation units, two secondary side logic processing units, two multi-level driving circuits, two driving resistance networks and two turn-off drain current detection feedback circuits. According to the present invention, the next multi-level pulse signal is determined according to the feedback information of a detection circuit, the feedback self-adaption can be detected to optimize the turn-off characteristic, and the influence of inherent detection circuit hardware delay of the detection circuit is effectively eliminated through the subtraction of the secondary side logic control units. Therefore, the turn-off transient oscillation and voltage overshoot of a half-bridge circuit switching tube are suppressed. When an active tube acts, the influence of crosstalk is suppressed by adjusting the grid-source electrode level of a passive tube, so that parasitic opening and grid-source electrode negative voltage overshoot are prevented, the use reliability of the device is improved, and the service life of the device is prolonged.

Description

technical field [0001] The invention relates to the technical field of power electronics, in particular to a novel driving topology of a SiC MOSFET suitable for a half-bridge circuit, a driving method thereof, and a crosstalk suppression method. Background technique [0002] Today, for high-power applications, widely used switching devices include IGBT modules composed of silicon IGBTs and fast recovery diodes and SiC MOSFET power modules. SiC MOSFETs made of silicon carbide semiconductor materials can achieve the following advantages: In high breakdown Under the field strength, a higher level of doping is achieved, so the on-resistance is smaller, and the conduction loss can be reduced and the system efficiency can be improved at the same power level. It can also reduce switching losses and improve converter efficiency; SiC MOSFET carriers drift fast, and the drift speed of 4H-SiC is twice that of Si. Furthermore, it can achieve higher switching frequency, higher operating...

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Problems solved by technology

[0013] The above-mentioned methods suppress crosstalk by adding electronic devices at the gate-source level, and the devices are inconvenient to be replaced once they are welded. crosstalk suppression under

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