Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Preparation method of piezoelectric nano-generator with all-weather service capability constructed based on N-doped SiC nano-structure array

A nanogenerator and nanostructure technology, applied in the manufacture/assembly of piezoelectric/electrostrictive devices, piezoelectric/electrostrictive/magnetostrictive devices, circuits, etc., to optimize output performance and enhance piezoelectric response ability, anti-oxidative effect

Pending Publication Date: 2022-03-11
UNIV OF SCI & TECH BEIJING
View PDF0 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Since silicon carbide also has a significant piezoelectric effect, the present invention proposes a piezoelectric nanogenerator with all-weather service capability based on an N-doped SiC nanostructure array to solve the problem of existing piezoelectric nanogenerators assembled with materials. The problem

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Preparation method of piezoelectric nano-generator with all-weather service capability constructed based on N-doped SiC nano-structure array
  • Preparation method of piezoelectric nano-generator with all-weather service capability constructed based on N-doped SiC nano-structure array
  • Preparation method of piezoelectric nano-generator with all-weather service capability constructed based on N-doped SiC nano-structure array

Examples

Experimental program
Comparison scheme
Effect test

preparation example Construction

[0039] See figure 1 An embodiment of the present invention is provided method of preparing a piezoelectric generator having a nano-weather service capability of the N-doped SiC-based nanostructure array constructed, comprising the steps of:

[0040] Preparation of N-doped silicon carbide Step 1): To N 2 O 5 Of nitrogen, at a temperature of 1000-1500 deg.] C, pressure 100-500Pa, protective argon atmosphere for 20 hours doped single crystal silicon carbide of nitrogen to give a nitrogen doping concentration of 0.1 to 10 mol% of silicon carbide. Wherein the silicon carbide single crystal is single or double polishing, a thickness of 100-500 [mu], polymorph as 2H, 4H, or 6H-type silicon carbide single wafer. Performed by a single silicon carbide single crystal doped with nitrogen, one can increase the asymmetry of the silicon carbide crystal structure, improve its piezoelectric coefficient, the ability to enhance its piezoelectric response; on the other hand, the introduction of N ato...

Embodiment 1

[0051] Preparation of N-doped silicon carbide single crystal (1): Example of the present embodiment is selected Form 2H, single-side polished silicon carbide single wafer as the raw material, a thickness of 100μm. By N 2 O 5 As nitrogen source, at 1000 ℃, 100Pa pressure argon atmosphere for the silicon carbide single crystal doped with nitrogen protection for 1 hour, with a nitrogen doping concentration of 0.1mol% of silicon carbide.

[0052] (2) Preparation of silicon carbide nanostructure array self supporting film: Based on N-doped single crystal silicon carbide, carbon doped silicon carbide surface N single wafer is etched by electrochemical etching. Etching the pulse voltage (5V) and pulse current (100mA) Power; pulse waveform is a sine wave, a pulse duty ratio of 10%; etching solution of hydrofluoric acid, alcohol and hydrogen peroxide, the ratio may be 8: 5: 0 in an amount of 10ml; etching 1min, eventually obtained by changing the surface topography of nanoporous lift-off m...

Embodiment 2

[0057](1) Preparation of N-doped silicon carbide monochrome: This example is selected from 4 h, and the silicon carbide single wafer having double-sided polished is 300 μm. N 2 O 5 For nitrogen sources, the silicon carbide monochrometer was doped for 10 hours at 1300 ° C, 300 Pa, and the argon atmosphere was protected, and silicon carbide of nitrogen doped concentration was 5 mol%.

[0058] (2) Preparation of self-supported silicon carbide nanostructure array film: based on N-doped silicon carbide single wafer, the carbon surface of N-doped silicon carbide monochrometers is etched by electrochemical etching. Eroching is a power supply with DC voltage (25V) and DC current (250mA); pulse waveform is a triangular wave, the pulse duty cycle is 50%; the proportion of hydrofluoric acid, ethanol and hydrogen peroxide in the etch can be 10:10 : 7, the amount is 30ml; etch 50min, finally obtaining a nano-nanostructure array film having a nano-strip with a steel-side strip and a thickness o...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
Login to View More

Abstract

The invention provides a preparation method of a piezoelectric nano-generator with all-weather service capability constructed based on an N-doped SiC nano-structure array, and belongs to the technical field of inorganic non-metal material science and energy materials.The preparation method comprises the steps that N-doped silicon carbide is prepared, a self-supporting silicon carbide nano-structure array film is prepared, and the piezoelectric nano-generator with all-weather service capability is obtained. The performance of the silicon carbide nano-structure array film is optimized, and a piezoelectric nano-generator with the all-weather service capacity is constructed. According to the preparation method of the piezoelectric nano-generator which is constructed based on the N-doped SiC nano-structure array and has the all-weather service capacity, the prepared piezoelectric nano-generator shows remarkable electric signal output macroscopically when being subjected to external force in the thickness direction. In addition, the prepared piezoelectric nano generator can still keep stable output after working for 300-500 days under the conditions that the temperature is-80 DEG C to 80 DEG C and the relative humidity is 0-100%.

Description

Technical field [0001] The present invention relates to the field of inorganic non-metallic science and energy materials, and more particularly to a method for preparing a piezoelectric nano generator having a full-time service capacity based on N-doped SiC nanostructure array. Background technique [0002] Currently, the piezoelectric nano generator is widely concerned by the ability to convert the disorderly mechanical energy in the natural environment into electrical energy. The global environment has high complexity and huge differences. In terms of temperature, the temperature of low temperature can be low to -70 ° C, while the temperature of high temperature can be as high as 60 ° C, in terms of relative humidity, the relative humidity of the desert area is 0%, while relative humidity in the tropical rainforest area is close to 100 %. Therefore, it is very important and urgent to develop piezoelectric nano generators that can have all-weather service capabilities worldwide....

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L41/22H01L41/253H01L41/23H01L41/25H10N30/01H10N30/02H10N30/03H10N30/04
CPCH10N30/02H10N30/03H10N30/04H10N30/01
Inventor 侯新梅周林林杨涛王恩会方志郑亚鹏薛优刘爽吕煜诚徐兵邢原铭王博
Owner UNIV OF SCI & TECH BEIJING
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com