Schottky diode and manufacturing method thereof
A Schottky diode and Schottky contact technology, applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve the problem of not fully utilizing the voltage resistance potential of the overall epitaxial layer, the current transmission capacity has a greater impact, and increase stability. The difficulty of maintaining stability and other issues can achieve the effects of good current transmission capacity and stability, low production cost, and reduced performance impact.
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[0061] In this embodiment, a Schottky diode, such as image 3 As shown, it includes: a substrate 1, a buffer layer 2, an epitaxial structure, a Schottky contact metal 7, and an ohmic contact metal 8, and the substrate 1, the buffer layer 2, and the epitaxial structure are sequentially stacked;
[0062] The epitaxial structure includes a superjunction layer 3, a GaN channel layer 4 and a barrier layer 5 stacked in sequence, and the superjunction layer 3 is formed by alternately stacking a plurality of p-type GaN layers 31 and n-type GaN layers 32;
[0063] The Schottky contact metal 7 and the ohmic contact metal 8 are respectively symmetrically disposed on opposite side surfaces of the epitaxial structure, and one end extends to the upper surface of the epitaxial structure, and the other end extends to the buffer layer 2 .
[0064] In the Schottky diode, the Schottky contact metal 7 and the ohmic contact metal 8 are respectively arranged symmetrically on opposite sides of the e...
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