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N-type antimony trimagnesium alloy thermoelectric material with high mobility and preparation method thereof

A technology of trimagnesium diantimony and high mobility, which is applied in the direction of thermoelectric device junction lead-out materials, thermoelectric device manufacturing/processing, etc., can solve problems such as interface phase defects and affect material transport performance, and achieve thermoelectric performance Optimization, favorable material stability, simple effect of dopants

Active Publication Date: 2019-04-12
TONGJI UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, magnesium's high saturated vapor pressure, corrosion, and high melting point often lead to the presence of interfacial phases and defects that affect the transport properties of this material

Method used

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  • N-type antimony trimagnesium alloy thermoelectric material with high mobility and preparation method thereof
  • N-type antimony trimagnesium alloy thermoelectric material with high mobility and preparation method thereof
  • N-type antimony trimagnesium alloy thermoelectric material with high mobility and preparation method thereof

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preparation example Construction

[0052] A method for preparing an N-type antimony trimagnesium alloy thermoelectric material with high mobility, comprising the following steps:

[0053] (1) Vacuum packaging:

[0054] Weigh the elemental raw materials Mg, Bi, Sb and Te according to the stoichiometric ratio, put them into tantalum tubes and vacuum seal them by arc melting, then put the sealed tantalum tubes into quartz tubes and vacuum pack them;

[0055] (2) Melt quenching:

[0056] Put the quartz tube containing the simple raw material encapsulated by the tantalum tube into the pit furnace to heat, so that the raw material can fully react in the molten state, and then quench to obtain the first ingot;

[0057] (3) Annealing and quenching:

[0058] The first ingot obtained in (2) is re-vacuum-packed in a quartz tube, heated in a pit furnace, annealed at a high temperature, and subsequently quenched to obtain a second ingot;

[0059] (4) hot pressing sintering:

[0060] The second ingot obtained in (3) was ...

Embodiment 1

[0071] A kind of trimagnesium antimony alloy thermoelectric material, its chemical formula is Mg 3.05 Sb 2-x-y Bi y-x Te x , wherein, 03 Bi 2 To optimize the carrier concentration and mobility, according to the following preparation method, the carrier concentration of Mg 3.05 Sb 2-x-y Bi y-x Te x Block material:

[0072] (1) According to different values ​​of x, the chemical formula is Mg 3.05 Sb 2-x-y Bi y-x Te x (x=0.02~0.14) stoichiometric ratio Weigh elemental raw materials Mg, Bi, Sb and Te with a purity greater than 99.99%, put them into tantalum tubes and vacuum seal them by arc melting, then put the sealed tantalum tubes into quartz tubes In and vacuum packaged.

[0073] (2) Hang the quartz tube containing the raw materials in a high-temperature well-type furnace, slowly raise the temperature to 1000-1100°C at a rate of 150-200°C per hour, keep it warm for 6-8 hours, and then quickly quench and cool to obtain the first ingot ; In this step of this embodim...

Embodiment 2

[0088] Compared with Example 1, most of them are the same, except that in the step (4) of this example, the molten ingot is ground into powder with a mortar in a glove box, placed in a graphite mold, vacuum hot-pressed and sintered, and then cooled , the sintering temperature of the obtained sheet-like bulk material is 527° C., and the pressure used for sintering is 100 MPa.

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Abstract

The invention relates to an N-type antimony trimagnesium alloy thermoelectric material with high mobility and a preparation method thereof. The chemical formula of the thermoelectric material is Mg<3.05>Sb<2-x-y>Bi<y-x>Te<x>, wherein x is more than 0 but less than or equal to 0.04, and y is more than 0 but less than or equal to 1.5. The thermoelectric material takes a high-pure element as a raw material, material is prepared according to a stiochiometric ratio in the chemical formula, the raw material is grinded to form powder after vacuum package by a tantalum pipe, high-temperature melting and annealing thermal treatment, and the thermoelectric material is obtained after vacuum hot-press sintering and slow cooling. Compared with the prior art, the tellurium doping is improved by solid solution of antimony trimagnesium, negative ion electrons are introduced, and simultaneous control of carrier concentration and lattice thermal conductivity is achieved; and meanwhile, the content of magnesium oxide in an N-type Mg3Sb2 alloy crystal boundary is reduced by tantalum package melting, so that higher mobility than that of traditional document is shown. The simple and controllable technology can be widely applied to various thermoelectric materials, particularly materials with a large amount of intrinsic defects, and a new method is provided for improving the thermoelectric performance.

Description

technical field [0001] The invention belongs to the technical field of new energy materials, and relates to an N-type antimony trimagnesium alloy thermoelectric material with high mobility and a preparation method thereof. Background technique [0002] Thermoelectric semiconductor materials, as a new type of energy material with zero emissions and no rotating parts, can realize the conversion between waste heat and electric energy, and are considered to be an effective solution to improve the increasingly serious energy crisis. The bottleneck that limits the large-scale application of thermoelectric semiconductor materials is their relatively low conversion efficiency, which can usually be measured by the dimensionless thermoelectric figure of merit zT, zT=S 2 σT / κ, where: T is the absolute temperature, S is the Seebeck coefficient, σ is the electrical conductivity, κ is the thermal conductivity, determined by the electronic thermal conductivity κ E and lattice thermal cond...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L35/16H01L35/18H01L35/34H10N10/852H10N10/01H10N10/853
CPCH10N10/853H10N10/852H10N10/01
Inventor 裴艳中李文史雪敏
Owner TONGJI UNIV
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