Rare earth doping Mg2Si based thermoelectric material
A technology of thermoelectric material and rare earth doping, which is applied in the direction of thermoelectric device junction lead wire material, etc., can solve the problem that the thermoelectric performance needs to be further improved, and achieve the effect of increasing the carrier concentration and improving the thermoelectric performance.
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Embodiment 1
[0013] The raw materials (pure magnesium, pure silicon and pure lanthanum) are in stoichiometric ratio Mg 1.995 SiLa 0.005 After calculation and weighing, induction melting was carried out under the protection of Ar gas, and then the material was ball-milled to 38.5 μm (400 mesh), and then vacuum hot-pressed at 850 °C and 80 MPa for 40 min to obtain La-doped Mg 1.995 SiLa 0.005 block samples.
Embodiment 2
[0015] The raw materials (pure magnesium, pure silicon and pure cerium) are in stoichiometric ratio Mg 1.998 SiCe 0.002 After calculation and weighing, induction melting was carried out under the protection of Ar gas, and then the material was ball-milled to 38.5 μm (400 mesh), and then vacuum hot-pressed at 850 °C and 80 MPa for 40 min to obtain Ce-doped Mg 1.998 SiCe 0.002 block samples.
Embodiment 3
[0017] The raw materials (pure magnesium, pure silicon and pure praseodymium) are in stoichiometric ratio Mg 1.995 SiPr 0.005 After calculation and weighing, induction melting was carried out under the protection of Ar gas, and then the material was ball-milled to 38.5 μm (400 mesh), and then vacuum hot-pressed at 850 °C and 80 MPa for 40 min to obtain Pr-doped Mg 1.995 SiPr 0.005 block samples.
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