Semiconductor element for thermoelectric module of real-time fluorescent quantitative PCR instrument

A semiconductor and component technology, which is applied in the field of semiconductor components for thermoelectric modules of real-time fluorescent quantitative PCR instruments, can solve problems such as potential difference increase, and achieve good thermoelectric conversion, high bending strength, and excellent thermoelectric performance.

Inactive Publication Date: 2021-06-25
HANGZHOU ANYU TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Due to the concentration difference created during this process in the conduction band, the charge carriers diffuse to the cooler side of the semiconductor element, resulting in an increase in the potential difference

Method used

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  • Semiconductor element for thermoelectric module of real-time fluorescent quantitative PCR instrument
  • Semiconductor element for thermoelectric module of real-time fluorescent quantitative PCR instrument
  • Semiconductor element for thermoelectric module of real-time fluorescent quantitative PCR instrument

Examples

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preparation example Construction

[0033] In some embodiments of the present invention, a method for preparing a semiconductor element includes the following steps:

[0034] In parts by weight, the SnCl 2 2H 2 O is dissolved in 100-150 parts by weight of absolute ethanol to make Sn 2+ The concentration is 0.25~75mol / L, reflux at 85~100℃ for 10~14h, and then press Sn 4+ :Sr 2+ :M 4+ = 1-a-b:2a:b ratio to add SrCl 2 ·6H 2 O, MCl 4 , wherein, 0.1≤a<0.3, 0.2≤b<0.5; metal M is one of Ti, Zr, Hf, continue to reflux at 85~100°C for 10~14h, and age at 30~35°C for 22~ 28h, obtain sol;

[0035] Using the dipping-lifting process, wash the ceramic substrate with 10% dilute hydrochloric acid, distilled water, and absolute ethanol in sequence, dry it at 45-55°C for 2-3 hours, and then dip it in the above sol for 1-3 minutes, vertically Steady pulling for 3 to 6 times, then drying at 75 to 100°C for 20 to 30 minutes, and then heat treatment at 550 to 650°C for 2 to 4 hours to obtain a nanoparticle film;

[0036] Dil...

Embodiment 1

[0041] A method for preparing a semiconductor element, comprising the steps of:

[0042]In parts by weight, the SnCl 2 2H 2 O is dissolved in 120 parts by weight of absolute ethanol to make Sn 2+ The concentration is 0.45mol / L, reflux at 90°C for 10h, and then press Sn 4+ :Sr 2+ :Hf 4+ =0.6:0.2:0.3 ratio to add SrCl 2 ·6H 2 O, HfCl 4 , continue to reflux at 90°C for 12h, and age at 30°C for 24h to obtain a sol;

[0043] Using the immersion-lifting process, the β-silicon nitride ceramic substrate with a size of 20mm×10mm×4mm was washed with 10% dilute hydrochloric acid, distilled water, and absolute ethanol in sequence, dried at 45°C for 3 hours, and then dipped After 1 min of the above sol, it was pulled vertically and steadily for 5 times, then dried at 85 °C for 20 min, and then heat-treated at 550 °C for 4 h to obtain (Sn 0.6 Sr 0.2 f 0.3 )O 2 nanoparticle film;

[0044] Dilute the silver paste according to the weight ratio of silver paste and turpentine oil to...

Embodiment 2

[0046] A method for preparing a semiconductor element, comprising the steps of:

[0047] In parts by weight, the SnCl 2 2H 2 O is dissolved in 140 parts by weight of absolute ethanol to make Sn 2+ The concentration is 0.65mol / L, reflux at 100°C for 12h, and then press Sn 4+ :Sr 2+ :Hf 4+ =0.4:0.4:0.4 ratio to add SrCl 2 ·6H 2 O, HfCl 4 , continue to reflux at 100°C for 12h, and age at 32°C for 26h to obtain a sol;

[0048] Using the dipping-lifting process, the β-silicon nitride ceramic substrate with a size of 20mm×10mm×4mm was washed with 10% dilute hydrochloric acid, distilled water and absolute ethanol in sequence, dried at 50°C for 2.5h, and then After dipping in the above sol for 2 min, it was pulled vertically and steadily for 4 times, then dried at 90 °C for 25 min, and then heat-treated at 600 °C for 3 h to obtain (Sn 0.4 Sr 0.4 f 0.4 )O 2 nanoparticle film;

[0049] Dilute the silver paste according to the weight ratio of silver paste to turpentine oil a...

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Abstract

The invention discloses a semiconductor element for a thermoelectric module of a real-time fluorescent quantitative PCR instrument. The semiconductor element comprises a ceramic substrate and a nanoparticle film coated on the ceramic substrate. The preparation method comprises the steps of dissolving tin salt in absolute ethyl alcohol, refluxing, then adding strontium salt and metal M salt, and continuing refluxing and aging to obtain sol; dipping the ceramic substrate in the sol by adopting a dipping-pulling process, and pulling to prepare a nano-particle film; and diluting the silver paste, coating two ends of the nanoparticle film with the silver paste for heat treatment, and welding leads at two ends of a silver electrode to obtain the semiconductor element. The nano-particle film is prepared from (Sn<1-a-b>Sr2aMb)O2, wherein a is greater than or equal to 0.1 and less than to 0.3, and b is greater than or equal to 0.2 and less than 0.5; and the metal M is one of Ti, Zr and Hf. The semiconductor element has a high power factor, a Seebeck coefficient, bending strength and a low friction coefficient.

Description

technical field [0001] The invention belongs to the technical field of semiconductors, in particular to a semiconductor element for a thermoelectric module of a real-time fluorescence quantitative PCR instrument. Background technique [0002] A number of thermoelectric modules are contained in a real-time fluorescent quantitative PCR instrument, and a thermoelectric module includes, for example, at least two semiconductor devices (p-doped and n-doped), provided on the upper and lower sides of the module (facing the hot side or the cold side) , with alternating conductive bridges, and which form the smallest thermoelectric unit or element. Thermoelectric materials are of the type that can convert thermal energy into electrical energy or vice versa (Peltier effect) in an efficient manner (Seebeck effect). If a temperature gradient is provided on both sides of the semiconductor element, a voltage potential develops across the ends of the semiconductor element. Charge carriers...

Claims

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Application Information

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IPC IPC(8): H01L35/22H01L35/34B01L7/00C12M1/00G01N21/64
CPCB01L7/52G01N21/6428H10N10/855H10N10/01
Inventor 章贤骏宣兆康方涌章佩娟
Owner HANGZHOU ANYU TECH CO LTD
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