Preparation method of novel P-based compound Ag6Ge10P12 material with high thermoelectric performance

Abstract

The invention belongs to the technical field of manufacturing of workpieces or products from metal powder and discloses a preparation method of a novel P-based compound Ag6Ge10P12 material with high thermoelectric performance. The material has very excellent thermoelectric performance due to doping of polycrystal Ag6Ge10P12, the overall performance can be improved by 2-3 times due to doping of about 3% of Ga, and time (about one week) required for growth of the material is equivalent to that required by other traditional polycrystal thermoelectrical materials. Compared with many P-based thermoelectric materials, the material has the highest PF (power factor) (deciding electric performance of the material), the highest zT (deciding thermoelectric performance) or average zT (deciding conversion efficiency) at present. The Ag6Ge10P12 polycrystal block material is prepared successfully; the problem that ultrahigh steam pressure produced by P elements in the growth process can cause explosion of quartz tubes is solved; the thermoelectric performance of the material is improved with the effective Ga element doping method.

Description

technical field [0001] The invention belongs to the technical field of manufacturing workpieces or products from metal powder, and in particular relates to a novel P-based compound Ag 6 Ge 10 P 12 Preparation method of high thermoelectric performance material. Background technique [0002] At present, the existing technologies commonly used in the industry are as follows: Recover waste heat energy to alleviate the energy crisis; heat energy can be directly converted into electric energy, can be refrigerated, and has no noise, no vibration, and no pollution; it is a kind of new energy technology. Most of the existing thermoelectric materials are binary or ternary semiconductor compounds composed of anions and cations. Through statistical research, it is found that most of the anions that make up thermoelectric materials are very rare heavy elements in the earth's crust, such as Te, Se or Sb. These heavy elements are key to achieving the lower thermal conductivity of rela...

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Problems solved by technology

[0004] 1. P element is very volatile during the high-temperature synthesis process, resulting in impurity of the compound and the explosion of the quartz tube wall due to the high vapor pressure of P;

[0005] 2. Due to the high thermal conductivity or low power factor of existing P-based thermoelectric materials, the final thermoelectric performance is too low

[0008] 2. The P-based materials that have been reported so far, due to the lack of excellent crystal structure (affecting the energy band structure and phonon dispersion relationship), resulting in low power factor or low lattice thermal conductivity, and excellent thermoelectric properties require materials Simultaneously meet high power factor and intrinsic low lattice thermal conductivity

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