Sense-Switch type pFLASH unit structure with high power and low electric leakage

Abstract

The invention discloses a Sense-Switch type pFLASH unit structure with high power and low electric leakage, and belongs to the technical field of Flash type switch units. A deep N well is arranged ona substrate; an active region of a programming / erasing transistor T1 and an active region of a signal transmission transistor T2 are manufactured in the deep N well; a tunnel oxide layer, a floating gate polycrystalline layer, an IPD polycrystalline dielectric layer and a control gate polycrystalline layer are sequentially arranged on the deep N well; a side wall is arranged on the outer side of the control gate polycrystalline layer; an ILD dielectric layer is arranged on the deep N well, and a metal layer is arranged on the ILD dielectric layer; the periphery of the tunnel oxide layer is provided with an SAB dielectric layer which is internally filled with metal silicide, a through hole connecting structure penetrating through the ILD dielectric layer is arranged above the metal silicide, and the metal layer is in ohmic contact with the programming / erasing MOS transistor T1 and the signal transmission transistor T2 through the through hole connecting structure and the metal silicide.The static electricity leakage level of the Flash basic unit in the Flash type FPGA can be reduced, the current transmission capacity of the Flash type FPGA is improved, and a new thought is providedfor development of the Flash type FPGA with low electricity leakage and high output power.

Description

technical field [0001] The invention relates to the technical field of Flash switch units, in particular to a high-power, low-leakage Sense-Switch type pFLASH unit structure. Background technique [0002] The Flash switching unit is the core basic unit for realizing the reconfigurable Flash programmable logic device, and its performance is between SRAM and antifuse. Flash-type FPGA technology is the next-generation mainstream technology following the anti-fuse FPGA process technology. With its non-volatile, reconfigurable, low power consumption, high density and other characteristics, it is widely used in computers, communications, automobiles, satellites and aerospace and other fields have broad application prospects. [0003] Static leakage is an important factor affecting the reliability of high-density Flash FPGAs. At the same time, further increasing the output power of Flash FPGAs will have more obvious advantages in aerospace and other fields. Contents of the inven...

AI Technical Summary

Problems solved by technology

[0004] The purpose of the present invention is to provide a high-power, low-leakage Sense-Switch type pFLASH unit structure to solve the problems of static leakage and low output power in the existing pFLASH unit structure

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