32results about How to "Good gettering effect" patented technology

The invention discloses a silicon wafer phosphorus diffusion gettering technology for manufacture of a solar cell, which comprises the following steps of: coating a phosphorus source on the surface of a silicon wafer; heating the silicon wafer to 800-1,100 DEG C at the rate of 50-200 DEG C / s in the presence of a protective gas atmosphere; preserving the temperature for 1-10 minutes; then cooling to 500-800 DEG C and preserving the temperature for 1-10 minutes; and cooling and then removing a phosphorosilicate glass layer. The invention has short process time, low cost and good gettering effect.

The invention was about one kind of C mixed silicon dice that has the function of inner absorbency of impurity, which has the oxygen concentration of 5-15X1017 cm-3, and C concentration was 5-30X1016cm-3. It is produced by: 1) the crystal was grown by method of straight drawing, the oxygen concentration of 5-15X1017cm-3 and C concentration was 5-30X1016cm-3 were obtained by control the processing parameter. 2) the silicon dice that has the oxygen concentration of 5-15X1017cm-3 and C concentration was 5-30X1016cm-3 was put into the furnace for heat treatment, which was thermal retarded 1-3 h on the temperature of 1100-1250 deg.C under the argon shield and helium gas shield. Then, it was thermal retarded 4-50 h on the temperature of 600-900 deg.C. After all, it was thermal retarded 4-30h on the temperature of 1000-1200 deg.C. Its advantages higher function of inner absorbency of impurity; good ability in the absorbency of harmful metal; used to the integrated circuit for improving the ratio of finished products.

An oxygen-free diffusion method for crystalline silicon solar cells, comprising: depositing a silicon wafer whose surface does not contain oxygen and a source layer film containing high-concentration dopant atoms, in a high-temperature furnace with an oxygen-free atmosphere at 810‑1050 Diffusion is carried out in the temperature range of ℃; after the diffusion is completed, the furnace temperature is lowered to 700-800°C, and an atmosphere with an oxygen volume concentration >2% is introduced, and annealing treatment is performed for 20-200min. The invention eliminates the possibility of oxygen entering the silicon wafer through the diffusion step, and can improve the impurity distribution state in the silicon wafer and the minority carrier lifetime of the silicon wafer; prevents the diffusion of oxygen to the silicon wafer and the uncontrollable elements in the doped layer diffusion. The invention is suitable for preparing p-type crystalline silicon diffusion layer and n-type crystalline silicon diffusion layer on n-type crystalline silicon chip, and also suitable for preparing n-type crystalline silicon diffusion layer and p-type crystalline silicon diffusion layer on p-type crystalline silicon chip. It is not only suitable for preparing monocrystalline silicon solar cells, but also suitable for preparing polycrystalline silicon solar cells.

The invention relates to an encapsulation structure for wafer backside. The structure comprises a semiconductor substrate and a multilayered structural layer which is arranged at the bottom of the semiconductor substrate and is formed by combining a polysilicon layer and an insulating layer (such as a silicon dioxide layer); the multilayered structure can promote the effect of impurity absorption, effectively prevents automatic doping, improves the phenomenon of burr, and saves process cost; and through the structure, the bowing degree and the warping degree of the silicon substrate are easily adjusted.

The invention discloses a variable temperature and variable pressure diffusion process for improving photoelectric conversion efficiency, comprising the following steps: step one of high temperature oxidation; step two of variable temperature and variable pressure diffusion: S1 of constant temperature and variable pressure diffusion: raising the temperature inside the furnace to 790 degrees centigrade, maintaining the temperature constant, controlling the pressure to increase from 100mbar to 800mbar in 160s; S2 of constant temperature and constant pressure maintaining: keeping the pressure inside the furnace constant, and controlling the temperature in the furnace to rise from 790 to 835 degrees centigrade in 450s; and S3 of constant temperature and constant pressure diffusion: adjusting the temperature in the furnace to 800 degrees centigrade within 30s, adjusting the pressure in the furnace to 200mbar, and diffusing for 500s - 650s under this condition; and step three of annealing and cooling. The invention variably controls the temperature and pressure during the diffusion process, thereby reducing the requirement of the silicon wafer spacing, reducing the phosphorus source dosage of the diffusion process by 20%, reducing the total diffusion process time by more than 10 minutes, and improving the battery yield and battery photoelectric conversion efficiency. Thus, the invention is very worth promoting.

The invention relates to a semiconductor extension wafer, a method of manufacturing same, and a manufacturing method for a solid camera component, and aims to provide a manufacturing method for the semiconductor extension wafer, which can achieve better impurity absorbing capability and inhibit generation of extension defects. The method of manufacturing the semiconductor extension wafer includes: a step 1, irradiating ion clutch, including C, H and O as structural elements, onto the surface of a semiconductor wafer, thus forming a modifying layer after solid dissolution of the structural elements of the ion clutch on the surface of the semiconductor wafer; a step 2, forming an extension layer on the modifying layer of the semiconductor wafer.

Provided is a method for manufacturing an epitaxial wafer having excellent gettering capability while suppressing the formation of epitaxial defects. It is characterized in that it has the following process: cluster ion irradiation process, with 2.0×10 14 / cm 2 Above 1.0×10 16 / cm 2 The following dose irradiates cluster ions 16 containing at least carbon to the surface of silicon wafer 10 having a resistivity of 0.001 Ω·cm or more and 0.1 Ω·cm or less, and the constituent elements forming cluster ions 16 form a solid solution on the surface of silicon wafer 10 to form a solid solution. and an epitaxial layer forming step of forming an epitaxial layer 20 having a resistivity higher than that of the silicon wafer 10 on the modified layer 18 of the silicon wafer 10 .

The invention discloses a method for removing transition metal impurities in a silicon wafer or silicon device in a sucking mode at the indoor temperature. Low-dose electron irradiation with the dose smaller than 5000 Gy is carried out on the silicon wafer or silicon device at the indoor temperature to enable the transition metal impurities in a to-be-cleaned area of the silicon wafer or an active area of the silicon device to be diffused to a nearby impurity sucking defect area, and therefore the concentration of the transition metal impurities in the to-be-cleaned area of the silicon wafer or the active area of the silicon device is lowered. Compared with an existing silicon material impurity sucking method, the method is implemented at the indoor temperature, and therefore the method can be used for silicon wafer or silicon device impurity sucking, is not limited to the single-crystal or polycrystalline silicon wafer and the silicon device, and is also suitable for other semiconductor materials such as germanium, and corresponding devices.

The invention discloses a method for manufacturing a selective emitter solar cell from local laser melting phosphorosilicate glass, which comprises the following steps of: texturing the surface of a chip; performing phosphorous diffusion by utilizing thermal diffusion, and generating the phosphorosilicate glass on the surface; diffusing the phosphorous element in the phosphorosilicate glass on a laser scanning part into the chip through local chip-melting; isolating the boundary; removing a damaged layer formed in the laser chip-melting process; removing the residual phosphorosilicate glass; forming a coating on the front surface; plating silver paste on the front surface of the chip in a screen printing mode, and obtaining a front electrode in a laser scanned area; plating the silver paste on a rear surface of the chip to form a back electrode, and plating aluminum paste on the rear surface of the chip in the screen printing mode to form a back electric field; and sintering the chip to make the metal electrode element and silicon in the chip eutectic. Only one diffusion process is present in the whole process, and the process is simple, has no damage to the silicon chip and has good gettering effect.

The invention provides a multi-functional short-staple rope twisting machine. The multi-functional short-staple rope twisting machine comprises anti-slip mats, left supporting legs, right supporting legs, a machine base, a U-shaped supporting frame, a rope twisting motor, a rotary disc, a linear sliding rail, U-shaped sliders, winged screws, rope twisting hooks, a rope taking and wheel replacing structure, a structure for coiling a rope after rope twisting, a rope twisting length measurement determining rail structure and an anti-overflow shield structure, wherein the anti-slip mats are transversely glued to the lower surfaces of the horizontal sections on the lower portions of the left supporting legs and the lower surfaces of the horizontal sections on the lower portions of the right supporting legs respectively. Due to the arrangement of a fixing rod, a movable sleeve, a fixing hook and a square-head bolt, the moving position of the fixing hook is easily adjusted according to the horizontal requirements of rope twisting, and it can be ensured that rope twisting work is smoothly conducted; due to the arrangement of an adjusting slider, a stainless steel sliding rail, a measurement ruler and an adjusting bolt, the rope twisting length is easily ensured, and the rope twisting length consistency can be ensured.