94results about How to "Inhibition Manufacturing Method" patented technology

A motor includes a stator, a rotor, and a case. The stator includes a stator core and windings. The rotor is provided inside the stator. The rotor includes first and second rotor cores and a field magnet. The first and second rotor cores each includes a core base and claw-shaped magnetic poles. The core bases are opposed to each other and the claw-shaped magnetic poles of the first and second rotor cores are alternately disposed in a circumferential direction. The field magnet is disposed between the core bases in the axial direction. The field magnet is magnetized in the axial direction so as to cause the claw-shaped magnetic poles of the first rotor core and the second rotor core to function respectively as first magnetic poles and second magnetic poles. At least part of an end part of the case in the axial direction is made of a non-magnetic body.

The fabrication method for an organic EL device according to the invention includes: forming a third insulating layer on a first insulating layer; removing the third insulating layer in a first pixel region by etching the third insulating layer; forming a second insulating layer that has different thicknesses in a first pixel and a second pixel and has a flat first surface by forming a precursor insulating layer to continuously cover a first reflection film and a second reflection film and then planarizing an upper surface of the precursor insulating layer; and forming a first pixel electrode and a second pixel electrode on the first surface of the second insulating layer. The first insulating layer is slower in the rate at which the layer is removed by etching than the third insulating layer.

The invention relates to a peeling device and peeling method of a substrate, and a manufacturing method of an electronic device. The peeling device of the substrate enables at least one of the substrate and a reinforcing plate for reinforcing the substrate to form flexural deflection and peels successively from an interface between the substrate and the reinforcing plate along a forward direction from one end side to the other end side. The peeling device of the substrate comprises a peeling component for pressing the substrate and the reinforcing plate with the interface peeled toward an opposite close direction.

The invention relates to a peeling device and peeling method of a substrate, and a manufacturing method of an electronic device. The peeling device of the substrate enables at least one of the substrate and a reinforcing plate for reinforcing the substrate to form flexural deflection and peels successively from an interface between the substrate and the reinforcing plate along a forward direction from one end side to the other end side. The peeling device of the substrate comprises a peeling component. The peeling component is provided with a flexible plate for absorbing and keeping the substrate or the reinforcing plate, and a drive component which applies a force to the flexible plate in a direction in parallel to the interface to make one of the substrate and the reinforcing plate form flexural deflection together with the flexible plate.

The disclosed dicing / die bonding integral film manufacturing method prevents the edge (E) of an adhesive layer (2) from peeling off of a pressure-sensitive adhesive layer (3b) during the process of dicing a semiconductor wafer (W). The disclosed dicing / die bonding integral film is provided with a substrate film (3a), a pressure-sensitive adhesive layer formed on the substrate film and bonded to a wafer ring (R) used in blade dicing, and an adhesive layer formed on the pressure-sensitive adhesive layer and having a central part bonded to the semiconductor wafer which is to be blade-diced, wherein the planar shape of the adhesive layer is circular, and the surface area of the adhesive layer is greater than that of the semiconductor wafer and smaller than that of the substrate film and that of the pressure-sensitive adhesive film. The diameter of the adhesive layer is greater than that of the semiconductor wafer and smaller than the inner diameter of the wafer ring. The difference between the adhesive layer diameter and the semiconductor wafer diameter is greater than 20mm and less than 35mm.

The present invention relates to a production method for hot press molded articles, whereby a die mold 11 is used to perform hot press molding on an Al-plated steel plate 10 having a zinc compound layer or a metal zinc layer as the outermost layer upon an Al plating layer. The die mold 11 has a hard layer 11C having a skewness (Rsk) of no more than 1.3 and a hardness Hv_Die of at least 2000 HV, asmeasured in a direction from the outside of a die hole 11D towards the inside, the hard layer 11C is the entire area adjacent to a die shoulder 11B out of a metal plate contact surface 11A that is asurface on the outside of the die hole 11D and in contact with the Al-plated steel plate 10 prior to hot press molding.

Disclosed is a method for soldering semiconductor elements on bonding sections arranged at a plurality of areas on a circuit board, respectively. The soldering method is provided with a step of arranging the bonding sections in nonlinear arrangement on at least three areas on the circuit board; a step of arranging the semiconductor elements on the bonding sections through a solder; a step of placing a guard over the at least three semiconductor elements nonlinearly arranged; and a step of melting the solder while applying pressure to the semiconductor elements by the guard, and thus soldering the semiconductor elements on the bonding sections. As a result, at the time of soldering the semiconductor elements on the circuit board, fluctuation in solder thickness at the bonding sections is suppressed.

The magnetic element has a first core member, a winding part, and a second core member, and is manufactured by way of at least a winding part placement step of placing the winding part on the face of the first core member on the side on which the core part is provided, such that the core part is positioned within the inner periphery of the winding part, and an injection molding step of injection molding so as to surround the first core member and the winding part with resin material, and in the winding part placement step, the winding part is placed on the face of the first core member on the side on which the core part is provided, with at least a portion of the inner peripheral face of the winding part distanced from the outer peripheral face of the core part.

A pad electrode of a high electron mobility transistor is formed solely of a pad metal layer without providing a gate metal layer. A high concentration impurity region is provided below the pad electrode, and the pad electrode is directly contacted to a substrate. Predetermined isolation is ensured by the high concentration impurity region. Accordingly, in a structure not requiring a nitride film as similar to the conventional art, it is possible to avoid defects upon wire boding attributing to hardening of the gate metal layer. Therefore, even in the case of a buried gate electrode structure for enhancing characteristics of the high electron mobility transistor, it is possible to enhance reliability and yields.

An assembled conductor and a manufacturing method for the assembled conductor are disclosed. The invention provides an assembled conductor (10), which is formed by rolling a conductor bundle (108) including a central conductor (2) and a peripheral conductor (1) arranged around the central conductor (2). The central conductor (2) has a shape in which a right-twisted portion (2a) of the central conductor and a left-twisted portion (2b) of the central conductor are arranged alternately in predetermined intervals (L1). The right-twisted portion (2a) of the central conductor extends from one end side (2d) of the central conductor (2) to the other end side (2e) of the central conductor (2) and is twisted in a clockwise direction, and the left-twisted portion (2b) of the central conductor (2) extends from the one end side (2d) of the central conductor (2) to the other end side (2e) of the central conductor (2) and is twisted in a counterclockwise direction. The peripheral conductor (1) is arranged around the central conductor (2) so that a twist direction of the peripheral conductor (1) becomes opposite to a twist direction of the central conductor (2).

The objective of the present invention is to provide a sound-blocking sheet member that has high sound-blocking performance exceeding the law of mass while being relatively lightweight, and has excellent manufacturability and durability. The sheet member has at least a sheet and a plurality of resonant parts. The resonant parts are provided in contact with a sheet surface of the sheet, and the resonant parts are provided with a weight section and a base section. The weight section is supported by the base section and has greater mass than the base section, and the weight section has a through portion. The base section makes contact with the surface of the weight section which is on the tip-end side of the resonant part, and covers the weight section.

Provided is a manufacturing method for a junction formed by joining a copper member (13B) comprising copper or a copper alloy, and an aluminum member (31) comprising an aluminum alloy having an Si concentration in a range of not lower than 1 mass% and not higher than 25 mass%. The manufacturing method for the junction is characterized by: setting, in the aluminum member before joining, a circle equivalent diameter D90 of an Si phase in a junction surface with the copper member to be in a range of not smaller than 1 [mu]m and not larger than 8 [mu]m; and joining by solid phase diffusion the aluminum member and the copper member.

Provided is a supporting substrate (30) to be bonded on a single crystal wafer composed of a single crystal body. The supporting substrate is provided with a silicon carbide polycrystal substrate (10) composed of a silicon carbide polycrystal body, and a coat layer (20) deposited on the silicon carbide polycrystal substrate (10). The coat layer (20) is composed of silicon carbide or silicon and is in contact with the single crystal wafer, and the arithmetic average roughness of the contact surface (22) of the coat layer (20) in contact with the single crystal wafer is 1 nm or less.

The present invention provides a glass laminate that enables a glass substrate to be less likely to break when the glass substrate is peeled off. The present invention is a glass laminate including a support substrate, an adhesion layer, and a glass substrate in this order, wherein: the peeling strength between the support substrate and the adhesion layer and the peeling strength between the adhesion layer and the glass substrate are different from each other; and of the interface between the support substrate and the adhesion layer and the interface between the adhesion layer and the glass substrate, no air bubble is present on the interface that has a lesser peeling strength, or in the case where an air bubble is present, the air bubble has a diameter of not more than 10 mm.

Disclosed is a method for manufacturing a sulfolene compound with which the production of polymers can be suppressed. Further disclosed is a method for manufacturing a sulfolane compound with which inhibition of the activity of a hydrogenation catalyst can be suppressed, allowing a sulfolane compound to be hydrogenated smoothly. The method for manufacturing a sulfolene compound is represented by formula (2) that comprises a step wherein a conjugate diene compound represented by formula (1) and sulfur dioxide are made to react in the presence of a metallocene compound. In formula (1), R<1>-R<6> independently represent a hydrogen atom or an alkyl group with a carbon number of 1-6. In formula (2), R<1>-R<6> represent the same groups as R<1>-R<6> in formula (1).

The invention provides a method for producing a resin film, the method having a step of supplying a long strip-like film and a step of stretching the film while conveying the film using a plurality of gripping members holding both ends of the film in the width direction. The thickness d of a gripping region, held by the gripping members, of the film is 0.012 to 0.045 mm, and the film is held by the gripping member in such a manner that the distance L between the front end of the film in the width direction and the furthest position from the portion, held by the gripping members, of the film to the front end satisfies the following formula (1). 2.5 mm< / =L< / = (1200*d-10.5)mm (1).