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Carbon doped silicon sheet with internal impurity absorbing function and production thereof

A carbon-silicon wafer and functional technology, applied in the field of carbon-doped silicon wafer preparation, can solve the problem of low micro-defect density, achieve good gettering effect, high internal gettering capacity, and improve yield

Inactive Publication Date: 2006-08-09
ZHEJIANG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] The micro-defect density in the existing Czochralski silicon wafer is low, and the gettering effect on harmful metals needs to be further improved

Method used

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  • Carbon doped silicon sheet with internal impurity absorbing function and production thereof

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0014] Select a 3-inch carbon-doped Czochralski silicon wafer (HCCZ-Si) grown under the protection of argon, with a carbon concentration of 1×10 17 cm -3 , the oxygen concentration is 8×10 17 cm -3 , The resistivity is 10 ohms. cm. In order to form a clean area and a bulk defect area in the silicon wafer, the silicon wafer is kept in a heat treatment furnace at 1200°C for 2 hours, then at 750°C for 16 hours, and after the treatment is completed at 1050°C for 16 hours. All heat treatments were performed under an argon atmosphere. After heat treatment, the silicon wafer was cleaved and etched in Sirtl preferential etching solution for 5 minutes, and then the distribution of defects on the cleavage plane was observed and photographed with an OLYMPUS MX50 microscope.

[0015] For comparison, an ordinary Czochralski silicon single crystal (CZ-Si) with the same oxygen concentration and resistivity, and a carbon concentration below the infrared detection limit, was also subjected...

Embodiment 2

[0018] Choose a 3-inch carbon-doped Czochralski silicon wafer grown under the protection of argon, with a carbon concentration of 5×10 16 cm -3 , the oxygen concentration is 15×10 17 cm -3 , The resistivity is 1 ohm. cm. Put the silicon wafer into the heat treatment furnace at 1150°C and keep it warm for 2 hours, then keep it at 650°C for 50 hours, and keep it at 1100°C for 6 hours after the treatment. All heat treatments were performed under an argon atmosphere. A silicon wafer with internal gettering ability can be obtained, with a certain width of defect-free clean area near the surface and a certain density of micro-defects (oxygen precipitation and secondary defects) in the body.

Embodiment 3

[0020] Select a 4-inch carbon-doped Czochralski silicon wafer grown under the protection of argon, with a carbon concentration of 3×10 17 cm -3 , the oxygen concentration is 6×10 17 cm -3 , The resistivity is 20 ohms. cm. Put the silicon wafer into the heat treatment furnace at 1250°C and keep it warm for 0.5 hours, then keep it at 850°C for 10 hours, and keep it at 1200°C for 20 hours after the treatment. All heat treatments were performed under an argon atmosphere. It is also possible to obtain a silicon wafer with internal gettering ability, a clean area with a certain width and no defects near the surface, and a certain density of micro-defects (oxygen precipitation and secondary defects) in the body.

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Abstract

The invention was about one kind of C mixed silicon dice that has the function of inner absorbency of impurity, which has the oxygen concentration of 5-15X1017 cm-3, and C concentration was 5-30X1016cm-3. It is produced by: 1) the crystal was grown by method of straight drawing, the oxygen concentration of 5-15X1017cm-3 and C concentration was 5-30X1016cm-3 were obtained by control the processing parameter. 2) the silicon dice that has the oxygen concentration of 5-15X1017cm-3 and C concentration was 5-30X1016cm-3 was put into the furnace for heat treatment, which was thermal retarded 1-3 h on the temperature of 1100-1250 deg.C under the argon shield and helium gas shield. Then, it was thermal retarded 4-50 h on the temperature of 600-900 deg.C. After all, it was thermal retarded 4-30h on the temperature of 1000-1200 deg.C. Its advantages higher function of inner absorbency of impurity; good ability in the absorbency of harmful metal; used to the integrated circuit for improving the ratio of finished products.

Description

technical field [0001] The invention relates to a method for preparing a carbon-doped silicon wafer with an internal gettering function, belonging to the field of semiconductors. Background technique [0002] In the early stages of silicon crystal research and production, researchers found that high concentrations of carbon in crystals would seriously damage the performance of diodes, transistors and other devices. Carbon can not only affect the precipitation of oxygen in silicon wafers or even precipitate SiC, reducing the quality of silicon wafers, but also It will cause the breakdown voltage of the device to be greatly reduced and the leakage current to increase, which will have a negative impact on the quality of the device. Therefore, many researchers believe that the introduction of carbon impurities should be avoided as much as possible during the crystal growth process. After years of hard work, in the current high-purity zone-melted silicon single crystal and Czoch...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/02C30B15/00C30B33/02
Inventor 杨德仁陈加和马向阳阙端麟
Owner ZHEJIANG UNIV
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