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Silicon wafer phosphorus and aluminum combined temperature varying and impurity suction method for preparing solar cells

A silicon wafer phosphor-aluminum, solar cell technology, applied in circuits, photovoltaic power generation, electrical components and other directions, can solve the problems of long process cycle, weak gettering effect, affecting the gettering effect, etc., and achieves obvious gettering effect and minority carrier life. Improve and satisfy the effect of gettering effect

Inactive Publication Date: 2014-07-16
NANKAI UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The phosphorus gettering method is relatively simple and the process cycle is short, but its gettering mechanism determines that its gettering effect is weaker than that of aluminum gettering
Aluminum gettering has a better gettering effect, but it takes a long time to evaporate the aluminum film, which directly leads to a longer process cycle
In addition, since the main mechanism of the gettering process in silicon lies in the three processes of release, diffusion, and capture, the heat treatment temperature required for different gettering methods and processes is also different, which also directly affects the gettering effect.

Method used

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  • Silicon wafer phosphorus and aluminum combined temperature varying and impurity suction method for preparing solar cells

Examples

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Effect test

Embodiment 1

[0022] A silicon wafer phosphorus-aluminum temperature-variable gettering method for preparing solar cells, comprising the following steps:

[0023] 1) De-damage layer: Prepare a NaOH solution with a concentration of 10wt%, and use a water bath to heat the solution at a constant temperature of 80°C. Put the monocrystalline silicon wafer into the solution for 8 minutes to remove the silicon damage caused by the wire saw cutting the silicon wafer. layer, take out the monocrystalline silicon wafer and wash it with deionized water for 3 minutes;

[0024] 2) Cleaning: Put the above-mentioned single crystal silicon wafer with the damaged layer into the acetone solution at 25°C for ultrasonic cleaning for 5 minutes, take it out and clean it with deionized water for 3 minutes, and then put the sample in absolute ethanol at 25°C for ultrasonic cleaning 5min, take it out, wash it with deionized water for 3min, and blow it dry with nitrogen for later use;

[0025] 3) Coating phosphorus ...

Embodiment 2

[0032] A silicon wafer phosphorus-aluminum temperature-variable gettering method for preparing solar cells, comprising the following steps:

[0033] 1) De-damage layer: Prepare a NaOH solution with a concentration of 15wt%, keep the solution at a constant temperature of 80°C by heating in a water bath, and put the monocrystalline silicon wafer into the solution for 10 minutes to remove the silicon damage caused by wire saw cutting the silicon wafer layer, take out the monocrystalline silicon wafer and wash it with deionized water for 3 minutes;

[0034] 2) Cleaning: Put the above-mentioned single crystal silicon wafer with the damaged layer into the acetone solution at 25°C for ultrasonic cleaning for 5 minutes, take it out and clean it with deionized water for 3 minutes, and then put the sample in absolute ethanol at 25°C for ultrasonic cleaning 5min, take it out, wash it with deionized water for 3min, and blow it dry with nitrogen for later use;

[0035] 3) Coating phosphor...

Embodiment 3

[0042]A silicon wafer phosphorus-aluminum temperature-variable gettering method for preparing solar cells, comprising the following steps:

[0043] 1) Remove the damaged layer: Prepare a NaOH solution with a concentration of 10wt%, and use a water bath to heat the solution at a constant temperature of 80°C. Put the polysilicon wafer in the solution for 15 minutes to remove the silicon damaged layer caused by the wire saw cutting the silicon wafer. After taking out the polysilicon wafer, wash it with deionized water for 3 minutes;

[0044] 2) Cleaning: Put the polysilicon wafer with the above-mentioned damaged layer into the acetone solution at 25°C for ultrasonic cleaning for 5 minutes, take it out and wash it with deionized water for 3 minutes, and then put the sample in absolute ethanol at 25°C for ultrasonic cleaning for 5 minutes. After taking it out, wash it with deionized water for 3 minutes, and dry it with nitrogen gas for later use;

[0045] 3) Coating phosphorus sou...

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Abstract

A silicon wafer phosphorus and aluminium combined temperature varying and impurity suction method for preparing solar cells comprises the following steps that after damage layer removing and ultrasonic cleaning are sequentially conducted on a substrate silicon wafer, the front face and the back face of the silicon wafer are coated with phosphorus sources first, and then the silicon wafer is plated with aluminium coatings in an evaporated mode; then under protecting of nitrogen atmosphere, thermal treatment is conducted, and primary impurity suction and secondary impurity suction are sequentially conducted; after the silicon wafer is cooled to the room temperature, the silicon wafer is put in a mixed solution of hydrofluoric acid and nitric acid to be corroded, and an impurity suction layer is removed. The silicon wafer phosphorous and aluminium combined temperature varying and impurity suction method for preparing the solar cells has the advantages that a temperature varying process is introduced on the basis of a phosphorus and aluminium impurity suction process, all the processes of impurity suction are effectively controlled through different temperatures, and the respective advantages of phosphorus impurity suction and aluminium impurity suction are fully utilized; the process is simple and easy to achieve, and other equipment is of no need; an impurity suction effect is obvious, after impurity suction treatment, the minority carrier lifetime of the silicon wafer is obviously prolonged, and the process cycle is reduced under the premise that the requirement for impurity suction effect is met.

Description

technical field [0001] The invention relates to a method for preparing a silicon solar cell, in particular to a silicon chip phosphor-aluminum combined temperature-variable gettering method for preparing a solar cell. Background technique [0002] The carrier of photovoltaic power generation is solar cells, and the key to making solar cells an important part of future energy is to reduce the cost of photovoltaic power generation to the same level as conventional energy. Crystalline silicon solar cells have attracted widespread attention due to their high conversion efficiency, abundant raw materials, and relatively cheap production costs. At present, crystalline silicon solar cells have also accounted for more than 80% of the current solar cell market. In order to further enhance the competitiveness of crystalline silicon solar cells, it is necessary to use cheaper substrates on the basis of ensuring the photoelectric conversion efficiency of the cells. The purity of the ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/18
CPCH01L31/1804H01L31/186Y02E10/547Y02P70/50
Inventor 赵颖王奉友张晓丹姜元建魏长春许盛之
Owner NANKAI UNIV
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