99results about How to "Excellent photoelectric properties" patented technology

The invention provides a gallium nitride nanowire and a preparation method thereof. The preparation method includes: under atmospheric pressure, chemical vapor deposition of elemental gallium, gallium oxide and an ammonia gas containing gas is carried out on a substrate loaded with a catalyst for preparation of the gallium nitride nanowire. The gallium nitride nanowire prepared by the preparation method has a periodic structure, and controllable morphology and sizes. The prepared gallium nitride nanowire having the periodic structure, compared with non periodic structure and straight gallium nitride nanowires prepared by the prior art, has more abundant exposed surfaces and improved photoelectrical properties, and has wide potential application value in the research and application of micro-nano optoelectronic devices. The preparation method is simple and easy to operate, and the use of high vacuum equipment which is a must in methods of the prior art is not needed.

The invention relates to a method for realizing controlled doping of nano silicon quantum dots, which belongs to the technical field of nano photoelectronic devices. The method comprises the steps of preparing a doped amorphous silicon film, preparing a doped amorphous silicon multilayer film, preparing doped nano silicon quantum dots in virtue of laser radiation, and the like. The invention provides a preparation method for convenient, rapid and effective controlled doping of the nano silicon quantum dots, and the method has short processing time, does not damage a film and a substrate in a nanosecond level, and is compatible with the current micro-electronics processing technology. In the implementation process, the method mainly adopts a high-energy laser to irradiate the surface of the film to obtain the nano silicon quantum dots with uniform size, simultaneously realize the controlled doping of impurity concentration and improve the photoelectric property of the film. The doped nano silicon quantum dots prepared by the method have wide application prospect in the fields of future nanoelectronics, nano photoelectronic devices and the like.

The invention discloses a copolymer containing a zinc-phthalocyanine group on a side chain and a preparation method thereof. The preparation method of the copolymer combines RAFT (reversible addition-fragmentation chain transfer) and a phthalocyanin annulation method for the first time to prepare the copolymer containing a zinc-phthalocyanine group on a side chain, and comprises the following steps of: on the presence of an initiator and a chain transfer agent, performing RAFT polymerization on a monomer methacrylic acid-6-(3,4-dicyanophenoxy)caprolactone to obtain a polymer PMADCE (polymethyl acrylic acid-6-(3,4-dicyanophenoxy)caprolactone) containing a phthalonitrile functional group on a side chain; and using the phthalonitrile functional group on the side chain of the PMADCE as a reaction point to perform phthalocyanin annulation with 4-(octyloxy)phthalonitrile in the presence of a heat-sensitive catalyst and zinc acetate so as to obtain a polymer PMADCE-ZnPc containing the zinc-phthalocyanine group on the side chain. The preparation method is few in step, simple, feasible, convenient in purification process, mild in reaction condition, controllable in process and high in conversion rate; and the PMADCE-ZnPc prepared by the method has good solubility and phthalocyanin functionality, can be used as a photoelectric material, and has good application prospects in solar cells, sensors and information storage.

The invention provides a Sb-SnO2-AgNWs / CBS-GNs flexible thin film solar cell and preparation method thereof, and belongs to the field of solar cells. The method comprises the steps of: dispersing purchased ultrafine silver nanowires in a mixed solution of an ionic liquid (EMIMBF4) and ultrapure water (volume ratio 1:10), and performing stirring to obtain an AgNWs homogeneous dispersion of, and depositing AgNWs on a polybutylene terephthalate (PET) substrate to prepare a flexible electrode by a spin coating deposition technique; secondly, adding Sb (3 +) doping and AgNWs into the SnO 2 precursor solution at the same time, and obtaining an Sb-SnO2-AgNWs electron transport layer through spin coating deposition; finally, preparing CBS nanobelts by adding a proper amount of GNs (0.8-1.2 wt%) into a CBS nanobelt solution, depositing a CBS-GNs photosensitive layer, a NiOx hole transport layer and a metal counter electrode and assembling a thin film solar cell.

The invention provides a method for preparing a quantum-dot single photon source in a hexagonal-prism nano microcavity. The method comprises the steps as follows: step 1, taking a semiconductor substrate, and growing a silicon dioxide layer containing oxidation holes on the semiconductor substrate; step 2, washing the semiconductor substrate, where the silicon dioxide layer grows; step 3, adopting an autocatalysis method to grow a GaAs nanowire on the silicon dioxide layer, and forming a Ga droplet at the top of the GaAs nanowire; step 4, adopting high As pressure processing to consume the Ga droplet at the top of the GaAs nanowire, restraining axial VLS (vapor-liquid-solid method) growth of the GaAs nanowire, and forming a prismatic shaped structure; step 5, depositing a first AlGaAs barrier layer on the side wall of the prismatic shaped structure, and depositing GaAs quantum dots at a low speed on the surface of the AlGaAs barrier layer; step 6, covering the GaAs quantum dots with a second AlGaAs barrier layer; and step 7, growing a GaAs protective layer on the surface of the second AlGaAs barrier layer to finish the preparation.

The invention provides a perovskite LED containing an organic-inorganic hybrid perovskite monocrystal light emitting layer, and a preparation method of the perovskite LED. The perovskite LED comprisesa CH3NH3PbX3 perovskite monocrystal light emitting layer, a p-type hole transport layer, a transparent conductive anode, an n-type electron transport layer, an electron injection layer and electrodes, wherein X=Cl, Br or I; the p-type hole transport layer is formed on the CH3NH3PbX3 perovskite monocrystal light emitting layer along a first direction; the transparent conductive anode is formed onthe p-type hole transport layer; the n-type electron transport layer is formed on the CH3NH3PbX3 perovskite monocrystal light emitting layer along a second direction opposite to the first direction; the electron injection layer is formed on the n-type electron transport layer; and the electrodes are formed on the electron injection layer. The invention further provides the preparation method of the perovskite LED. The perovskite LED and the preparation method effectively reduce the defect state density of the surface of the light emitting layer, improve the photoelectric property and stabilityof perovskite CH3NH3PbX3, and realize efficient radiative recombination of carriers under electric injection.

The invention discloses a one-dimensional organic semiconductor nano material and a preparation method and an application thereof. The material employs a unsymmetrical perylene bisimide derivative monomer as a construction monomer, hydrophilic branched-chain alkyl (5-nonane) and pentafluorophenyl substituent are respectively introduced at two sides of perylene bisimide, and the one-dimensional organic semiconductor nano material can be obtained by self assembly preparation through Pi-Pi interacting of construction monomers. The one-dimensional organic semiconductor nano-material has the advantages of high fluorescence quantum yield, porous performance, large surface area, and good stability, greatly reduces the detection lowest limitation, has good anti-interference capability for an aggregate such as triphosgene and other common gases and organic solvent steam, and realizes specific and high-sensitivity detection on phosgene.

A functional material with a CuO and In2O3 micro-nano heterogeneous periodic structure of the invention and a preparation method thereof belong to the technical field of semiconductor heterostructure material. The functional material is assembled from bump portions and pit portions in periodic alternation; a bump portion is formed by stacking of nano CuO, and a pit portion is formed by stacking of nano In2O3; and a bump CuO and an adjacent In2O3 pit constitute a period. The preparation method comprises the steps of: precipitating Cu2O and In(OH)3 alternately under effect of square wave potential in a solution containing nitrates; and carrying out high temperature treatment on the Cu2O and In(OH)3 to obtain the material with CuO and In2O3 heterogeneous periodic structure. The functional material prepared by the invention has excellent optical, electrical and gas sensitive properties and high stability; and the heterostructure material with different periods prepared by growth voltages with different frequencies has characteristics of controllable growth area and adjustable periodicity.

The invention discloses a graphene / indium phosphide photoelectric detector. The photoelectric detector sequentially comprises an indium phosphide layer, a graphene layer and a surface electrode from bottom to top or sequentially comprises an indium phosphide layer, an insulation layer and a surface electrode from bottom to top as well as a graphene layer arranged on the indium phosphide layer and contacted with the surface electrode. A preparation method of the photoelectric detector comprises steps as follows: transferring graphene to a clean indium phosphide sheet, and then producing the surface electrode on the graphene layer; or growing the insulation layer on the clean indium phosphide sheet, then producing the surface electrode on the insulation layer, finally, transferring the graphene to indium phosphide, and enabling the graphene to be contacted with the surface electrode. The graphene / indium phosphide photoelectric detector uses the high carrier mobility and the good photoelectric response of the graphene material, combines excellent semiconductor photoelectric properties of the indium phosphide, and is sensitive in photoresponse, high in responsivity and simple in preparation process.

The invention discloses a method for preparing a flexible Cu-In-Ga-Se (CIGS) thin film solar cell. The method is characterized by comprising the following steps: step 1, preparing a CIGS light absorption layer on a soda glass substrate by adoption of a high-temperature coevaporation process; step 2, pasting a temporary supporting layer; step 3, removing the soda glass substrate; step 4, bonding a flexible substrate; step 5, removing the temporary supporting layer, wherein the step 5 particularly comprises the following steps: firstly, adopting limonene to dissolve paraffin on the surface of the CIGS light absorption layer, removing the temporary supporting substrate and paraffin, cleaning with deionized water and blow-drying with nitrogen; after that, preparing a CdS buffer layer with the deposition thickness of 50-80 nm by adoption of a chemical water bath method; adopting a magnetron sputtering process on the buffer layer to obtain an intrinsic zinc oxide thin film with the deposition thickness of 50 nm and an ITO thin film with the deposition thickness of 300-800 nm, and preparing a 3 [mu]m aluminium electrode on the ITO thin film by adoption of an electron beam evaporation process to finish preparation of a cell device.

The invention relates to a 2,6-difluoro benzoyl chloride difluoro monomer with photoelectric activity and application of the monomer to preparation of a polyarylether sulphone high-molecular polymer containing photoelectric activity units in the side chain, and belongs to the technical field of high-molecular materials. Various compounds of a photoelectric activity structure and with monoamino groups and 2,6-difluoro benzoyl chloride are subjected to amide condensation to obtain the novel difluoro monomer with photoelectric activity; the prepared bifluoro monomer, dual-halogen-substituted diphenyl sulfone and a bisphenol monomer are subjected to ternary polymerization to obtain a series of polyarylether sulphone copolymers with different contents of photoelectric activity side chains by adjusting the feeding ratio of dual-halogen-substituted diphenyl sulfone to the bisphenol monomer. The polyarylether sulphone material prepared through the method has excellent photoelectric activity, outstanding heat stability and good solubility, and has potential wide application value in the photoelectricity fields such as hole transport, electrochromism, electroluminescence, information storage and output and solar cells, and the machinability of the polyarylether sulphone material is improved.

The invention provides two types of disc-shaped polycyclic aromatic hydrocarbon n-type organic semiconductor molecules having different symmetries, which are formed through an action between CDI or BPMI and a base along the lowest energy direction on the surface of the base, wherein a molecular film gradually reaches thermodynamic stability through changes of internal situation to form a two-dimensional structure of a high-density arrangement. By taking advantage of the self-assembly method of the disc-shaped polycyclic aromatic hydrocarbon organic molecules on a solid surface, a highly ordered semiconductor single-layer film is obtained, and the method is of great significance in the electronic transmission of such aspects as further adjusting and optimizing a field effect transistor, a diode, a light emitting diode, a solar cell and the like.

The invention discloses a method for developing quantum dot on the side wall of GaAs nanowire by utilizing nanoring as a mask. The method comprises the step of taking one semiconductor substrate, the step of developing a silicon dioxide layer on the semiconductor substrate, the step of washing the semiconductor substrate on which the silicon dioxide layer is developed, the step of developing the nanowire on the silicon dioxide layer by adopting the autocatalysis method, wherein the top end of the nanowire is provided with Ga liquid drop, the step of processing and consuming the Ga liquid drop at the top end of the nanowire by adopting high As pressure, and restraining the growth of a VLS on the nanowire at the top end to form a substrate, the step of depositing the Ga liquid drop on the substrate under the environment with low As pressure, the step of combining and crystallizing the As and Ga liquid drop to form the nanoring on the side wall of the nanowire on the substrate in the As environment, and the step of developing the quantum dot and a covering layer by utilizing the nanoring as the mask. By means of the method, the quantum dot is developed on the side wall of the nanowire in an imaging mode for the first time, quantitative control over the number of quantum dots on one nanowire is achieved, and the method has important application prospects on the aspect of a nanowire-based single photon source.

The invention discloses a tetraaryl-substituted bis-phenanthrene-fused compound based on dithienothiophene containing a plurality of alkoxy chains and a synthesis method of the compound, and the compound has the structures shown in general formulas (I) and (II). A polycyclic-fused compound of the bis-phenanthrene-fused dithienothiophene in the general formula (II) can be obtained by intramolecularoxidation ring-closing of FeCl3 of a tetraaryl-substituted dithienothiophene compound in the general formula (I). The tetraaryl-substituted dithienothiophene compound in the general formula (I) has blue fluorescence emission and certain liquid crystal properties. Due to the further expansion of the central conjugated coplanar, the bis-phenanthrene-fused dithienothiophene compound in the general formula (II) can be self-assembled into a stable liquid crystal interphase in a highly ordered manner and is a good mesocrystal. The compound can further be used as an OLED blue luminescent material with higher optical quantum yield, an excellent P-type semiconductor material with high hole transport rate and a gel of multiple polar / non-polar organic solvents.

The invention provides a high-efficiency purification method of a water-dispersed carbon nanomaterial. A ball-milling mixture of a carbon nanomaterial, water-soluble azo dye molecules and derivable modifiable molecules is dissolved with water, and then mixed well with an inorganic salts / aqueous alkali, centrifugation is conducted for 1-30 minutes at the centrifugal speed of 3000-10000 rounds / minute, a supernatant dye solution is sucked out, and then water is added to ultrasonically dissolve bottom precipitation; and the salting-out assisted centrifugation purification process is repeated untila product is washed, and a carbon nanomaterial dispersed in the water is obtained. The high-efficiency purification method has the outstanding characteristics that common alkali and salt are used asan auxiliary settling agent, in a short time and at a low centrifugal speed, high-efficiency separation of free-state dye molecules from the water-dispersed carbon nanomaterial can be realized, in thepurification process of the water-dispersed carbon nanomaterial, the loss of the carbon nanomaterial is small, a purification reagent is environment-friendly, the cost is low, and the purification process has no effect on the physical and chemical properties of the carbon nanomaterial such as the water dispersibility and the photoelectric performance.

The invention discloses a double-source metal codeposition method capable of suppressing silver agglomeration. The double-source metal codeposition method capable of suppressing silver agglomeration comprises the following steps: choosing added metal materials from aluminium, gold, copper, magnesium, titanium and indium; choosing a substrate: choosing a transparent material if both front surface reflection and back surface reflection are applied or back surface reflection is applied; choosing a film preparation temperature and a use temperature, and choosing a high-temperature material for high-temperature condition preparation and use; cleaning the substrate; and during deposition film formation, considering a film coating mode, a substrate temperature, a deposition mode, a deposition vacuum degree, the ratio and the control of the two metal materials, a film thickness and the like, wherein the film coating mode can choose resistance evaporation, electron beam evaporation, magnetron sputtering and the like, the substrate temperature is from a room temperature to 300 DEG C, the deposition mode is double-source metal codeposition, and two containers are respectively filled with silver and the added metals for codeposition, the deposition vacuum degree is at least 5*10<-3>Pa. According to the double-source metal codeposition method capable of suppressing silver agglomeration disclosed by the invention, a film is prepared in the common film coating condition, and the exertion of good photoelectrical properties of the silver film in the common high-temperature condition is realized.

The invention discloses a dual-mode sensor array and an application of the dual-mode sensor array in distinguishing and identifying hydrazine and organic amine. Fluorescent compounds involved in the dual-mode sensor array are dicyanovinyl functionalized oligothiophene derivatives and zinc porphyrin derivatives. Two types of fluorescent compounds and the mixture solution of the two types of fluorescent compounds are respectively dispensed on a silica gel plate to obtain a ratio type ultraviolet visible and fluorescent dual-mode sensor array, based on output color and signal change caused by composite change of absorption and fluorescence emission peak intensity, specific selective recognition of a target analyte is realized. Before and after the analyte is dropwise added, color change of the dual-mode sensor array under a fluorescent lamp and an ultraviolet lamp is very remarkable, interference of environmental factors is weakened, and the result is accurate; moreover, the response speed is high, operation is simple, stronger sensitive detection and distinguishing recognition capability on hydrazine, fatty amine and aniline target analyte solutions is shown, and the great development potential and an application value are realized.

The invention relates to a preparation method for a tin-lead binary perovskite thin film growing in a preferred orientation mode, which combines additive engineering with ultrasonic external force inthe process of preparing the tin-lead binary perovskite thin film by using a one-step spin-coating method, and treats a precursor solution. By adding the solid additive tartaric acid into the precursor solution, the crystallization speed can be delayed while the perovskite crystal structure is stabilized, and further ultrasonic treatment is adopted, so that controllable preferred growth of different crystal faces can be realized in the growth process of the thin film crystal, and the crystallization quality of the tin-lead binary perovskite polycrystalline thin film is improved. The prepared tin-lead binary perovskite thin film with the (224) preferred orientation is used for manufacturing the perovskite solar cell of an inverted structure, and the cell structure is ITO / PEDOT:PSS / MA0.9Cs0.1Pb0.75Sn0.25I3 / PCBM / Ag. And the photoelectric conversion efficiency of the perovskite solar cell is obviously improved. The preparation process for realizing the kinetic regulation and control on thegrowth of the tin-lead binary absorption layer thin film crystal has the characteristics of simplicity in operation, safety, environmental protection and high repeatability.

The invention provides a co-combustion preparation method of a sulfur doped graphene quantum dot and relates to a preparation method of a graphene quantum dot, in particular to the co-combustion preparation method which adopts cheap liquid paraffin and carbon disulfide as raw materials for preparation of the sulfur doped graphene quantum dot with a co-combustion method. According to the co-combustion preparation method of the sulfur doped graphene quantum dot, a structure and an energy level of the graphene quantum dot are effectively modulated through doping of heterogeneous sulfur atoms, so that photoelectrical properties of the graphene quantum dot are modulated, and the co-combustion preparation method of the sulfur doped graphene quantum dot is characterized in that the sulfur doped graphene quantum dot is obtained with the co-combustion preparation method, an ultrasonic preparation method and the like. According to the co-combustion preparation method of the sulfur doped graphene quantum dot, the overall technical route is innovative, the price is low, sulfur doped carbon nanospheres prepared with the co-combustion method are subjected to ultrasonic liquid-phase stripping, the sulfur doped graphene quantum dot is successfully prepared and has excellent photoelectrical properties, the extra energy level of the graphene quantum dot is increased, and the performance of the graphene quantum dot is effectively improved.

The invention relates to a preparation method for copper-doped multilayer graphene, and relates to graphene. According to the preparation method for copper-doped multilayer graphene, through doping ofheterogeneous copper atoms, the structure and the energy stage of the multilayer graphene are effectively regulated, and the photoelectric property of the multilayer graphene is improved. According to the preparation method, a graphite target material and a copper target material are used as raw materials, direct current radio frequency joint sputtering of magnetron sputtering is adopted, a copper element is led into a carbon substrate, and the structure and the energy stage of the multilayer graphene are effectively improved. According to the preparation method, low-cost easily-obtained andnontoxic graphite target material and copper target material are used as the raw materials, the copper element is led into the carbon substrate, the structure and the energy stage of the multilayer graphene are effectively improved, and the electron transition mode is more diverse; and the photoelectric property of the multilayer graphene is effectively changed, and the multilayer graphene can beused for detectors, light emitting diodes, solar batteries, supercapacitors, lithium ion batteries, fluorescent materials and other fields.

The invention discloses a multiplication type perovskite organic composite photoelectric detector and a preparation method thereof. The device structurally comprises a transparent substrate, an anode, a hole transport layer, a perovskite layer, a spacer layer, an electron transport layer, an electron capture layer, a hole transport side and a metal cathode in sequence, wherein the perovskite layer is a perovskite thin film prepared by a spin-coating soaking dynamic spin-coating method, the spacer layer is a blending layer of TAPC and C60 or C70, and the electron capture layer is a blending layer of MoO3 and C60 or C70. According to the invention, the electron capture layer is evaporated on the perovskite layer, the damage to the perovskite film is reduced while the photomultiplication effect is obtained by using the electron capture induced hole tunneling injection mechanism, and the perovskite material does not need to be prepared in a glove box, so the application of the perovskite material in the direction of a photoelectric detector is expanded.

The invention provides an n-type organic semiconductor material as well as a preparation method and application thereof. The n-type organic semiconductor material has structures represented by formulae I-VII (shown in the description). The n-type organic semiconductor material prepared by virtue of the preparation method has very high electronic transmission performance, excellent dissolubility, high skeleton planarity, good crystallinity and adjustable and controllable photoelectric property, can be taken as an acceptor material for a solar cell, can be taken as an electronic transmission material in an n-type field effect transistor and has huge utilization potentiality and values in the organic semiconductor materials.

The invention belongs to the technical field of inorganic nano material preparation, and particularly relates to a porous Cu7S4 / Cu (OH)2 composite nanofiber material and a preparation method thereof.The preparation method includes: adopting a water solution of copper chloride dihydrate and thiourea in ethylene glycol to generate [Cu(tu)] Cl.1 / 2H2O at normal temperature and at pressure; converting[Cu(tu)] Cl.1 / 2H2O in a strong alkali solution into the porous Cu7S4 / Cu(OH)2 composite nanofiber material. The composite nanofiber material is of a nanofiber structure composed of Cu7S4 and Cu(OH)2 nano crystals in uniform distribution, a ratio of Cu7S4 to Cu(OH)2 is 1:2-2:1, and fiber diameter is 75-85nm; the composite nanofiber material has mesopores, pore size distribution is 2-25nm, pore sizeof 70-85% of the mesopores is 5-7nm, pore volume exceeds 0.2cm3 / g, and surface specific area exceeds 100m2 / g. the composite nanofiber material is suitable for the field of solar cells, secondary cells, supercapacitors, LEDs, air-sensitive sensors, photoelectric conversion switches, thermocouples, optical coupling, light filters, fluorescent materials and superconductors.

The invention discloses a preparation method for a CdS or CdSe single-crystal nanowire array. The preparation method comprises the following steps: placing CdS or CdSe solid body on a substrate; then, placing the substrate in a high-temperature heating area of a tube furnace; vacuumizing the tube furnace into which the substrate is placed and introducing a protective gas; raising the temperature of the tube furnace, maintaining the pressure intensity in the tube furnace at 10 to 2,000 Pa, reacting for 0.1 to 2 hours, and naturally decreasing the temperature of the tube furnace to room temperature after the reaction is ended. The preparation method is low in cost, high in controllability and simple in steps; the CdS single-crystal nanowire array or the CdSe single-crystal nanowire array prepared by the preparation method are arranged tidily and are consistent in crystal orientation, high in crystallinity degree and low in defect rate, show excellent photoelectric properties, and have a very important research value and a very important application prospect in the aspects of nano-scale optoelectronic devices, solar cells, photocatalysis, bio-sensing and the like.

The invention discloses a light-operated terahertz wave modulation device and a preparation method thereof. The light-operated terahertz wave modulation device comprises a substrate, a buffer layer, aheterogeneous layer, a first electrode, a second electrode and a voltage and current source which are arranged in sequence, wherein the voltage and current source comprises a positive electrode output end and a negative electrode output end, the substrate comprises a first surface and a second surface which are opposite to each other, the first electrode is arranged on the first surface, the second electrode is arranged on the second surface, a plurality of columns of transistors are formed on the heterogeneous layer, the plurality of columns of transistors are connected in series, ohmic electrodes of the plurality of columns of transistors are connected with the first electrode, gates of two adjacent columns of transistors are connected, the gates are connected with the second electrode,the ohmic electrodes, the gates, the first electrode and the second electrode form a composite metasurface structure, the gates regulate and control channel conductance between every two adjacent ohmic electrodes in each column, the composite metasurface structure is converted between the resonance metasurface and a wire grid, and the sensitivity of the light-operated terahertz modulation deviceis greatly improved.

The invention provides an n-type organic semiconductor material as well as a perpetration method and application thereof. The n-type organic semiconductor material has a structure shown as a formula Ior a formula VII. The n-type organic semiconductor material prepared by the preparation method provided by the invention has high electronic transmission performance, excellent solubility, high skeleton planarity, good crystallinity and controllable photoelectric property, not only can be taken as a receptor material for an all-polymer solar cell, but also can be taken as an electronic transmission material in a n-type field effect transistor and has huge application potentials and values in the field of organic semiconductor materials.

The invention discloses a preparation method of a multi-port quantum regulation and control device based on a bifurcated nanowire. The method comprises the following steps that 1, an Si substrate is taken; a naturally formed silica thin layer exists on the surface of the Si substrate; 2, the Si substrate is cleaned; 3, a GaAs nanowire is grown on the silica layer by an auto-catalysis method; N-type or P-type doping is selectively performed on the GaAs nanowire; 4, Ga drops at the top end of the GaAs nanowire are consumed by high As pressure treatment; growth of VLS (Vapor-Liquid-Solid) at the top end of the GaAs nanowire is restrained; 5, InAs quantum dots are deposited at a low speed on a side wall of the GaAs nanowire in a low As pressure environment; 6, a GaAs layer is grown on the InAs quantum dots; a bifurcated structure substrate is formed; 7, the bifurcated structure substrate is covered with an AlGaAs barrier layer; and 8, a GaAs protective layer is grown on the surface of the AlGaAs barrier layer; technology preparation is performed to form the multi-port quantum regulation and control device; and the preparation is accomplished.

The invention relates to the field of solar energy, and in particular relates to a photovoltaic material containing a thiophene ring and a preparation method of the photovoltaic material. The organicphotovoltaic material prepared by the method structurally contains the thiophene ring, the thiophene ring has a five-membered ring structure, conforms to a Huckel rule, and has a moderate energy bandgap, wider spectral response, and better thermal stability and environmental stability, so that the organic photoelectric material has excellent photoelectric properties, high conversion efficiency and low manufacturing costs, and is superior to a current common OLED. The invention also provides the preparation method of the organic photoelectric material. The preparation method is simple and haseasily-available raw materials, and can meet the needs of industrial development; the organic photoelectric material provided by the invention has a good application effect in an OLED, and good industrial prospects; and the entire molecule of the product provided by the invention is asymmetric, so that the crystallinity of the molecule is destroyed, the intermolecular aggregation effect is avoided, the product has good film forming performance, and the thermal stability, glass transition temperature and decomposition temperature of the material are improved.

The invention discloses a conjugated polymer and a method for synthesizing the conjugated polymer. The detection method is as follows: (1) adding an aqueous solution of a conjugated polymer and a nanosilver solution to a buffer solution, stirring and reacting, standing, and measuring the fluorescence intensity; (2) adding a solution containing the etimicin to be tested, stirring and reacting, standing, and measuring the fluorescence intensity or absorbance; and (3) calculating the molar concentration of etimicin. The conjugated polymer of the invention can be adsorbed on the surface of the silver nanoparticle in a non-covalent manner to realize fluorescence and colorimetric detection; and is also well soluble in water and an organic solvent. The synthesis method provided by the inventionis simple in operation, low in cost and suitable for the industrial production. The detection method provided by the invention combines the conjugated polymer with the silver nano particles to form anew nano-composite system, which obviously improves the sensitivity of the detection for etimicin, is simple and easy, and has accurate detection, rapidness, sensitivity, good detection linear and good selectivity.