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Graphene/indium phosphide photoelectric detector and preparation method thereof

A photodetector, indium phosphide technology, which is applied to circuits, electrical components, semiconductor devices, etc., can solve problems such as affecting the responsivity of light detection, achieve good light absorption and light detection response performance, is easy to implement, and has a simple preparation process Effect

Inactive Publication Date: 2015-07-15
ZHEJIANG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, since graphene is only atomically thick, it absorbs relatively little light (~2.3%), which affects the responsivity of photodetection.

Method used

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  • Graphene/indium phosphide photoelectric detector and preparation method thereof
  • Graphene/indium phosphide photoelectric detector and preparation method thereof
  • Graphene/indium phosphide photoelectric detector and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0023] 1) Immerse the p-type indium phosphide sheet sample successively in acetone and isopropanol solutions for surface cleaning;

[0024] 2) Transfer the single-layer graphene to the cleaned indium phosphide sheet;

[0025] 3) A 100nm gold electrode is deposited on the graphene by a thermal evaporation process to obtain a graphene / indium phosphide photodetector.

[0026] Apply a voltage between the two surface electrodes, and test the photodetector's current change under different light conditions to reflect its response to different spectra and light intensities. image 3 That is, when 5V voltage is applied to the photodetector prepared in this example, the current value change curves of continuous tests at intervals without illumination and under 1 standard sunlight illumination can be seen that the photodetector prepared in this example has a sensitive photoresponse, High responsiveness.

Embodiment 2

[0028] 1) Immerse the n-type indium phosphide sheet in acetone and isopropanol solutions successively for surface cleaning;

[0029] 2) Transfer 10 layers of graphene to the cleaned indium phosphide sheet;

[0030] 3) Deposit 200nm nickel / gold electrodes on graphene by thermal evaporation process to obtain graphene / indium phosphide photodetectors.

Embodiment 3

[0032] 1) Immerse the n-type indium phosphide sheet in acetone and isopropanol solutions successively for surface cleaning;

[0033] 2) Transfer the 3-layer graphene onto the cleaned indium phosphide sheet;

[0034] 3) Screen-print 500nm silver electrodes on graphene to obtain graphene / indium phosphide photodetectors.

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Abstract

The invention discloses a graphene / indium phosphide photoelectric detector. The photoelectric detector sequentially comprises an indium phosphide layer, a graphene layer and a surface electrode from bottom to top or sequentially comprises an indium phosphide layer, an insulation layer and a surface electrode from bottom to top as well as a graphene layer arranged on the indium phosphide layer and contacted with the surface electrode. A preparation method of the photoelectric detector comprises steps as follows: transferring graphene to a clean indium phosphide sheet, and then producing the surface electrode on the graphene layer; or growing the insulation layer on the clean indium phosphide sheet, then producing the surface electrode on the insulation layer, finally, transferring the graphene to indium phosphide, and enabling the graphene to be contacted with the surface electrode. The graphene / indium phosphide photoelectric detector uses the high carrier mobility and the good photoelectric response of the graphene material, combines excellent semiconductor photoelectric properties of the indium phosphide, and is sensitive in photoresponse, high in responsivity and simple in preparation process.

Description

technical field [0001] The invention relates to a photoelectric detector and a preparation method thereof, in particular to a graphene / indium phosphide photodetector and a preparation method thereof, belonging to the technical field of photoelectric devices. Background technique [0002] After the graphene two-dimensional atomic material was first discovered and prepared in 2004, more studies have shown that graphene materials have excellent electrical, optical and mechanical properties, such as extremely high carrier mobility, wide wavelength range Light response, high Young's modulus and flexibility. These unique properties make it possible for graphene to be widely used in the field of optoelectronic technology, including photodetectors, solar cells, etc. In recent years, many researchers have conducted research on the application of graphene photodetectors. Its advantage is that it can achieve ultra-fast and wide-band spectral response. However, since graphene is only ...

Claims

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Application Information

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IPC IPC(8): H01L31/09H01L31/18
CPCH01L31/0304H01L31/09H01L31/18Y02P70/50
Inventor 林时胜王朋李晓强章盛娇徐志娟吴志乾徐文丽陈红胜骆季奎李尔平
Owner ZHEJIANG UNIV
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