The invention discloses a unilateral MOS-type device manufacturing method integrated with an SBD structure. Through introducing a special angle groove manufacturing process, an inclination angle unilateral ion implantation process and a schottky metal process compatible with an ohm process, manufacturing of an SiC groove MOSFET device integrated with an SBD structure is realized. The silicon carbide SBD structure is integrated in the silicon carbide groove-type MOSFET device, a reverse follow current function can be realized well, the reverse recovery time of the MOSFET device can be reduced,and the application cost of a silicon carbide power electronic device can be effectively reduced. In combination of a unilateral high-mobility groove structure with special crystal face etching, whilethe groove mobility is improved, the size of a primitive cell is narrowed, and the device conduction ability is improved.