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Preparation method and application of tin-lead binary perovskite thin film growing in preferred orientation mode

A preferred orientation, perovskite technology, applied in electrical components, semiconductor/solid-state device manufacturing, photovoltaic power generation, etc., can solve the problems of destroying the three-dimensional perovskite structure, limiting perovskite, poor photoelectric properties of thin films, etc. The effect is sufficient to enhance the photoelectric properties and improve the surface morphology

Active Publication Date: 2020-02-18
JILIN NORMAL UNIV
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Problems solved by technology

[0004] In view of the poor photoelectric characteristics of the film caused by the excessive crystallization speed of the current tin-lead low-toxicity binary perovskite polycrystalline material system and the large amount of Sn 2+ is oxidized to Sn 4+ Problems such as the ability to severely damage the three-dimensional perovskite structure at the time greatly limit the improvement of the performance of this type of perovskite photovoltaic device.

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  • Preparation method and application of tin-lead binary perovskite thin film growing in preferred orientation mode
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  • Preparation method and application of tin-lead binary perovskite thin film growing in preferred orientation mode

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Embodiment Construction

[0023] Specific embodiments of the present invention will be described in detail below with reference to the drawings.

[0024] A method for preparing a tin-lead binary perovskite film grown in a preferred orientation, the method comprising the following steps:

[0025] 1. Preparation of base material PEDOT:PSS: The clean ITO transparent conductive glass is treated with ultraviolet ozone for 20 minutes to improve its surface wettability and remove functional groups such as -OH on the surface. After the ITO is cooled to room temperature, 80μLPEDOT:PSS (AI4083) The original solution was dropped on the ITO surface and allowed to stand for 5-15 seconds, then spin-coated at a low speed of 500 rpm for 10 s, and processed at a high speed of 4000 rpm for 60 s. Then the material was heated on a scorching table at 140°C for 10 minutes. The prepared PEDOT:PSS film was subjected to ultraviolet ozone treatment for 20 minutes, cooled to room temperature, and moved to a glove box for later use.

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Abstract

The invention relates to a preparation method for a tin-lead binary perovskite thin film growing in a preferred orientation mode, which combines additive engineering with ultrasonic external force inthe process of preparing the tin-lead binary perovskite thin film by using a one-step spin-coating method, and treats a precursor solution. By adding the solid additive tartaric acid into the precursor solution, the crystallization speed can be delayed while the perovskite crystal structure is stabilized, and further ultrasonic treatment is adopted, so that controllable preferred growth of different crystal faces can be realized in the growth process of the thin film crystal, and the crystallization quality of the tin-lead binary perovskite polycrystalline thin film is improved. The prepared tin-lead binary perovskite thin film with the (224) preferred orientation is used for manufacturing the perovskite solar cell of an inverted structure, and the cell structure is ITO / PEDOT:PSS / MA0.9Cs0.1Pb0.75Sn0.25I3 / PCBM / Ag. And the photoelectric conversion efficiency of the perovskite solar cell is obviously improved. The preparation process for realizing the kinetic regulation and control on thegrowth of the tin-lead binary absorption layer thin film crystal has the characteristics of simplicity in operation, safety, environmental protection and high repeatability.

Description

Technical field [0001] The invention belongs to the technical field of nano-functional materials, and specifically is a method for preparing a tin-lead binary perovskite film grown in a preferential orientation. The method is manifested in regulating the growth process of a low-toxic tin-lead binary perovskite absorption layer , Realize the controllable preferred orientation growth from (110) crystal plane to (224) crystal plane and the construction of corresponding perovskite solar cells. Background technique [0002] Polycrystalline perovskite materials can be widely used in emerging fields such as solar cells, light-emitting diodes, and quantum dots due to their excellent photoelectric properties, such as high volume mobility, micron diffusion length, and large absorption coefficient. in. Up to now, perovskite solar cells have attracted the attention of many researchers with their cheap production costs and continuous breakthroughs in photovoltaic characteristics. Among them...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/46H01L51/42H01L51/48
CPCH10K71/12H10K85/30H10K30/00Y02E10/549
Inventor 杨丽丽孙岩森王奉友孙云飞范琳庞振宇杨景海
Owner JILIN NORMAL UNIV
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