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Gallium nitride nanowire and preparation method thereof

A technology of gallium nitride nanowires and gallium oxide is applied in the field of gallium nitride nanowires and their preparation, which can solve the problems of inability to prepare gallium nitride nanowires, and achieve rich exposed surfaces, good crystallinity, and wide application value. Effect

Active Publication Date: 2013-11-13
THE NAT CENT FOR NANOSCI & TECH NCNST OF CHINA
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  • Description
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Problems solved by technology

[0005] At present, the growth methods of gallium nitride nanowires include: laser-assisted chemical vapor deposition, template-assisted chemical vapor deposition, metal-organic chemical vapor deposition, molecular beam epitaxy, etc., and these growth methods generally can only produce flat Straight, non-periodic GaN nanowires but not periodic GaN nanowires

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  • Gallium nitride nanowire and preparation method thereof
  • Gallium nitride nanowire and preparation method thereof
  • Gallium nitride nanowire and preparation method thereof

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preparation example Construction

[0024] According to the aforementioned method for preparing gallium nitride nanowires of the present invention, as long as it is ensured that under normal pressure, simple gallium, gallium oxide, and a gas containing ammonia are chemically carried out on a substrate loaded with a catalyst for preparing gallium nitride nanowires. Vapor phase precipitation can fully realize the purpose of the present invention.

[0025] In the present invention, the optional range of the flow rate of the gas containing ammonia is relatively wide, and the inventors of the present invention found in the research process that the gas containing ammonia should be reasonably controlled in the process of preparing gallium nitride nanowires. The flow rate measured by ammonia gas can make the prepared gallium nitride nanowires have the advantages of good monodispersity, regular and complete exposed surface. Therefore, for the present invention, the flow rate of the ammonia-containing gas is preferably 3...

Embodiment approach

[0035] According to a preferred embodiment of the present invention, the present invention can be carried out as follows:

[0036] (1) Prepare a substrate loaded with a catalyst for preparing gallium nitride nanowires by plasma sputtering (for example, a gold film can be sputtered on a silicon wafer);

[0037] (2) At room temperature, mix elemental gallium, gallium oxide, and elemental carbon, grind them into powder, put them in a crystal boat, and put them in a vacuum tube furnace. Placed in the downstream of the mixture powder, vacuumize to remove the air in the vacuum tube furnace tube, then feed nitrogen until the pressure in the vacuum tube furnace tube is normal pressure; then under normal pressure, continuously feed nitrogen and ammonia, wherein , nitrogen is used as the carrier gas, ammonia is used as the reaction gas, the temperature is continuously raised to the required temperature during the process, and after the reaction is completed, the temperature is naturally...

Embodiment 1

[0052] (1) A gold film with a thickness of 10nm is sputtered on a 10mm×10mm silicon wafer by plasma sputtering;

[0053] (2) At room temperature (generally 10-40°C), mix 2g of metal elemental gallium, 2g of gallium oxide and 0.5g of carbon powder, grind to form a mixture powder, then put the mixture powder in a crystal boat, and place it in a vacuum tube The middle position of the furnace; the aforementioned silicon chip with the gold film is placed downstream of the mixture powder, vacuumed to remove the air in the tube of the vacuum tube furnace, and then nitrogen gas is introduced until the pressure in the tube of the vacuum tube furnace is normal pressure; then Under the condition of normal pressure, nitrogen and ammonia are fed continuously. Among them, nitrogen is used as carrier gas with a flow rate of 40 sccm, and ammonia gas is used as a reaction gas with a flow rate of 80 sccm. During this process, the temperature is continuously raised to 960°C, and the temperature r...

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Abstract

The invention provides a gallium nitride nanowire and a preparation method thereof. The preparation method includes: under atmospheric pressure, chemical vapor deposition of elemental gallium, gallium oxide and an ammonia gas containing gas is carried out on a substrate loaded with a catalyst for preparation of the gallium nitride nanowire. The gallium nitride nanowire prepared by the preparation method has a periodic structure, and controllable morphology and sizes. The prepared gallium nitride nanowire having the periodic structure, compared with non periodic structure and straight gallium nitride nanowires prepared by the prior art, has more abundant exposed surfaces and improved photoelectrical properties, and has wide potential application value in the research and application of micro-nano optoelectronic devices. The preparation method is simple and easy to operate, and the use of high vacuum equipment which is a must in methods of the prior art is not needed.

Description

technical field [0001] The invention relates to a gallium nitride nanowire and a preparation method thereof. Background technique [0002] As a new material for the development of microelectronic devices and optoelectronic devices, gallium nitride has properties such as wide direct band gap, strong atomic bond, high thermal conductivity, and good chemical stability. Microwave device applications have broad prospects. GaN nanowires have been used as structural units of various nanodevices since they were prepared, such as light-emitting diodes, field effect transistors, nanolasers, nanogenerators, and so on. Compared with silicon nanowires and carbon nanotubes, gallium nitride nanowires have the following advantages in application: (1) stable chemical properties, high operating temperature, acid and alkali corrosion resistance; (2) undoped gallium nitride Nanowires are n-type semiconductors, and the electron mobility rate is not easy to saturate; (3) have ideal luminescence...

Claims

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Application Information

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IPC IPC(8): C01B21/06B82Y40/00
Inventor 杨蓉张营王琛
Owner THE NAT CENT FOR NANOSCI & TECH NCNST OF CHINA
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