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A method for manufacturing a semiconductor device having steps of forming an amorphous semiconductor on a substrate having an insulating surface; patterning the amorphous semiconductor to form plural first island-like semiconductors; irradiating a linearly condensed laser beam on the plural first island-like semiconductors while relatively scanning the substrate, thus crystallizing the plural first island-like semiconductors; patterning the plural first island-like semiconductors that have been crystallized to form plural second island-like semiconductors; forming plural transistors using the plural second island-like semiconductors; and forming a unit circuit using a predetermined number of the transistors, where the second island-like semiconductors used for the predetermined number of the transistors are formed from the first island-like semiconductors that are different from each other.

A game system includes, for example, a game console and a plurality of hand-held game apparatuses functioning as an operating means. In the game system, a game for causing a plurality of player characters simultaneously displayed to find a hidden item in a game field is performed. Then, in a case that a distance between a non-displayed item hidden as an object to be found and the player character falls within the range of the predetermined distance, a notification sound varied depending on the distance, for example, is output from a speaker of the hand-held game apparatus operating the player character.

A booster circuit is disclosed, the booster circuit having a plurality of booster cells tandem-connected, each of the boosters having a transfer transistor and a capacitor, an input terminal, a drain, and a gate of the transfer transistor being connected, a source of the transfer transistor being an output terminal, a first terminal of the capacitor being connected to the source of the transfer transistor, a clock signal being supplied to a second terminal of the capacitor, wherein the transfer transistor is composed of a triple-well having a first well and a second well, the first well being formed on a semiconductor substrate, the second well being formed on the first well, and wherein the semiconductor substrate is connected to a reference voltage, a diffusion layer in the first well, a first diffusion layer in the second well, a second diffusion layer in the second well, the first terminal of the capacitor, and the gate of the transfer transistor being connected, the conduction type of the first well being the same as the conduction type of the diffusion layer in the first well, the conduction type of the second well being the same as the conduction type of the first diffusion layer in the second well, the conduction type of the second well being different from the conduction type of the second diffusion layer in the second well.

In a III-nitride semiconductor laser device, a laser structure includes a support base comprised of a hexagonal III-nitride semiconductor and having a semipolar primary surface, and a semiconductor region provided on the semipolar primary surface of the support base. An electrode is provided on the semiconductor region of the laser structure.

The invention discloses a full-position connecting pipe and safety end circular seam welding method achieved through tungsten electrode inert gas arc welding. According to the method, nickel base alloy serves as an isolating layer to carry out machining on a connecting pipe and a safety end so that a welding groove can be formed by the connecting pipe and the safety end during assembling, and the welding groove is welded. A plurality of weld beads are welded during welding, the bottom end of a part to be welded is arced during welding, spin welding is carried out along one side of the part to be welded to the top end of the part to be welded, arcing is stopped, the bottom end of the part to be welded is arced again, spin welding is carried out along the other side of the part to be welded to the top end of the part to be welded, and arcing is stopped. When the welding groove is a double-faced U-shaped narrow gap groove, an outer groove is welded but not completely welded, back chipping and complete welding are carried out on an inner groove, and then complete welding is carried out on the outer groove. When the welding groove is a single-faced narrow gap groove, the groove is completely welded, a cushion plate is removed, and back chipping is carried out.

The present disclosure relates to a touch display device, a touch sensing circuit, and a driving method. Further, the present disclosure relates to a touch display device, a touch sensing circuit, and a driving method, in which multiple touch electrodes are grouped into multiple touch electrode groups, and sensing is concurrently performed for each of the multiple touch electrode groups, so that excellent touch sensitivity and a fast touch sensing speed are allowed.

A three-dimensional memory device and a manufacturing method thereof are provided. The three-dimensional memory device includes a plurality of bottom source lines extending in a first horizontal direction, a stacked structure disposed on the bottom source lines, a plurality of bit lines extending in a second horizontal direction, and a plurality of pillar structures passing through the stacked structure. The stacked structure includes a plurality of composite structures spaced apart from one another and respectively located at different levels. The composite structures each include a gate conductive layer and a ferroelectric layer surrounding the gate conductive layer. Each of the pillar structures connected between the corresponding bit line and the corresponding bottom source line includes a barrier layer, a gate insulating layer, and a channel layer. The ferroelectric layer of each composite structure is insulated from the gate insulating layer of the pillar structure by the barrier layer.

A functional material with a CuO and In2O3 micro-nano heterogeneous periodic structure of the invention and a preparation method thereof belong to the technical field of semiconductor heterostructure material. The functional material is assembled from bump portions and pit portions in periodic alternation; a bump portion is formed by stacking of nano CuO, and a pit portion is formed by stacking of nano In2O3; and a bump CuO and an adjacent In2O3 pit constitute a period. The preparation method comprises the steps of: precipitating Cu2O and In(OH)3 alternately under effect of square wave potential in a solution containing nitrates; and carrying out high temperature treatment on the Cu2O and In(OH)3 to obtain the material with CuO and In2O3 heterogeneous periodic structure. The functional material prepared by the invention has excellent optical, electrical and gas sensitive properties and high stability; and the heterostructure material with different periods prepared by growth voltages with different frequencies has characteristics of controllable growth area and adjustable periodicity.

The invention relates to a formation method of an LDMOS (Lateral Diffusion MOS) transistor and an LDMOS transistor. The formation method of the LDMOS transistor comprises the steps of providing a semiconductor substrate, wherein the semiconductor substrate is provided with a fin portion, and the fin portion is internally provided with a well region, forming a drift region in the fin portion, wherein the drift region surrounds the drift region, forming a gate structure stretching across the fin portion, wherein the gate structure covers the top and side walls of the fin portion, and the gate structure partially covers the drift region, forming a source electrode material layer and a drain electrode material layer in the fin portion at two sides of the gate structure, and the drain electrode material layer is located inside the drift region, and carrying out ion implantation on the source electrode material layer and the drain electrode material layer so as to form a source electrode and a drain electrode. The performance of the LDMOS transistor can be improved by adopting the method provided by the invention.

A method for manufacturing a semiconductor device having steps of forming an amorphous semiconductor on a substrate having an insulating surface; patterning the amorphous semiconductor to form plural first island-like semiconductors; irradiating a linearly condensed laser beam on the plural first island-like semiconductors while relatively scanning the substrate, thus crystallizing the plural first island-like semiconductors; patterning the plural first island-like semiconductors that have been crystallized to form plural second island-like semiconductors; forming plural transistors using the plural second island-like semiconductors; and forming a unit circuit using a predetermined number of the transistors, where the second island-like semiconductors used for the predetermined number of the transistors are formed from the first island-like semiconductors that are different from each other.

A manufacturing method for a target material assembly includes the steps of providing a target material which is a tungsten-silicon material, carrying out sand blasting on a to-be-welded surface of the target material, washing the target material after sand blasting, carrying out activating treatment on the to-be-welded surface of the target material after washing, forming a metal coating on the to-be-welded surface of the target material through a chemical plating process after activating treatment, and welding the target material to a back plate together through the metal coating. By means of the manufacturing method for the target material assembly, the target material assembly formed by the tungsten-silicon material has an enough bonding rate and bonding strength.

The invention discloses a manufacturing method of a target assembly. The manufacturing method comprises the steps that a target made of molybdenum silicon material is provided; a to-be-welded surface of the target is subjected to sand blasting; the target is subjected to washing treatment after the sand blasting; the to-be-welded surface of the target is subjected to activating treatment after the washing treatment; a metal coating layer is formed on the to-be-welded surface of the target by adopting a chemical plating technology after the activating treatment; and the target is welded to a back plate by utilizing the metal coating layer. With the adoption of the manufacturing method of the target assembly, the target assembly formed by the molybdenum silicon material has sufficient binding rate and bonding strength.

The present invention relates to a blade for a wind power plant with an assembly face for mounting in a circular pitch bearing, whose pitch axis is angled relative to the longitudinal axis of the blade, and wherein the blade comprises a root part with an approximately elliptic cross-section, in which root part the assembly face is arranged. The invention further relates to a wind power plant in general having a pitch- adjustable blade mounted in a pitch bearing such that the distance between the outermost part of the blade and the tower is increased when the leading edge of the blade is pitched up in the wind. This is accomplished in that the longitudinal axis of the blade is angled in a particular way compared to its pitch axis. The invention also relates to a method of controlling a wind power plant, including to increase the rotor area and / or increasing the distance between the outermost part of at least one blade and the tower by regulating, during operation, the pitch of a blade about a pitch axis which is angled relative to the longitudinal axis of the blade.

The invention relates to a wrist-worn device (10) for sensing ambient light intensity, comprising a plurality of light receivers arranged at different positions of the wrist-worn device (10) in different orientations to receive light from different directions (+X, −X; +Y, −Y; −Y; +Z, −Z).

The invention discloses a rod body piston resistance-increase yielding anchor rod and a construction method. The problem is solved that a resistance-increase structure of an anchor rod is easily blocked. By arranging a sleeve outside an anchor rod body and changing the thickness of the wall of the sleeve, the thickness of the wall of the sleeve gradually changes, and accordingly a yielding effectis realized. In the technical scheme, the anchor rod comprises the sleeve, the sleeve is of a hollow structure, and sleeves the rod body, the end, serving as an anchoring segment, of the rod body extends into the tail end of the sleeve and is connected with a resistance-increase structure, and the other end of the rod body extends to the outer side of the head end of the sleeve and is connected with an anchor head. The thickness of the wall of the part, corresponding to the anchoring segment of the rod body, of the sleeve is gradually decreased from head end to tail end, and when the anchor rod gradually pushes a soil body forwards, the wall of the sleeve deforms and is lengthened to realize yielding.

The invention discloses an LDMOS transistor and an LDMOS transistor forming method. The LDMOS transistor forming method comprises the steps of: providing a semiconductor substrate which is provided with fin parts; forming a drift region in each fin part; forming gate structures crossing the fin parts, wherein the gate structures cover the top part and side walls of the fin parts, and the gate structures cover the drift regions partially; forming source material layers and drain material layers in the fin parts on both sides of each gate structure, wherein the drain material layers are positioned in the drift regions; and carrying out ion implantation in the source material layers to form sources, and carrying out ion implantation in the drain material layers to form a drain. The LDMOS transistor formed by adopting the LDMOS transistor forming method has improved performance.

The invention discloses environment-friendly sewage filtering equipment based on deformation of a magnetic-control filter screen. The environment-friendly sewage filtering equipment comprises a water guide pipe and a mounting cavity formed in the water guide pipe in a communicating mode, wherein the inner side wall of the water guide pipe is connected with a mounting piece; a filter screen is arranged on the inner side of the mounting piece and is formed by interweaving elastic silk threads; a discharging opening located in the side face of the mounting piece is formed in the inner side wall of the water guide pipe; the inner side wall of the discharging opening is in threaded connection with a discharging plug; the inner side wall of the water guide pipe is connected with a water transmission mechanism used for transmission and a positioning mechanism used for plugging the mounting cavity; an electric push rod is fixedly connected to the inner side wall of the mounting cavity; a driving motor is fixedly connected to the output end of the electric push rod; a blowing mechanism and a suction mechanism are connected to the driving motor; and the electric push rod can control the whole suction mechanism to be stored in the mounting cavity.

The invention provides an antistatic macromolecule protective film which comprises an antistatic original film and a release film, wherein the antistatic original film is an external coating type antistatic original film; each of the upper layer and the lower layer of the original film is coated with an external coating; combination of the external coating type antistatic original film and an antistatic adhesive is the main reason for improving the antistatic effect of an antistatic adhesive layer, which is the largest breakthrough on research and development; the condition that the base material texture has certain degree of influence on the conductivity of the adhesive layer is judged; the resistance value of the surface of the adhesive layer is successfully decreased from (10<10>-10<11>) to (10<6>-10<9>); the antistatic original film is coated with the antistatic adhesive layer, and is combined with the release film together; the adhesive in the antistatic adhesive layer is added with a metallic antistatic agent; the antistatic agent adopts the lithium antistatic agent; the metallic lithium is large in electric charge density, has low possibility of being polarized, is high in stability, and can be mixed with the adhesive to form a good conductive grid; the antistatic adhesive layer and one external coating of the antistatic original film are combined together through an enhanced adhesion layer.

The invention belongs to the field of biological analysis and micro-manufacturing, and discloses a high-flux droplet array rapid preparation device based on spray assistance. The device sequentially comprises, from top to bottom, an aerosol droplet generation device used for atomizing a liquid to form aerosol droplets, and specifically formed by connecting an atomizer and a base; an aerosol droplet restraining and settling channel which is used for restraining the settling and diffusion area of the aerosol droplets so as to control the settling and collecting area of the droplets; and a droplet collection interface which is used for receiving droplets obtained after sedimentation and collecting to obtain a droplet array. The droplets may preferably be preserved in air for at least seven days by a temperature differential supply assembly. By improving the arrangement of all the components in the device, the corresponding matching working mode and the like, the problems of droplet arraypreparation, control and further storage can be effectively solved, and the ultra-fast forming device is an ultra-fast forming device for the ultra-high-flux droplet array assisted by spraying.

The invention firstly provides a wearable touch sensor with area perception, and the touch sensor comprises a coordinate system established according to an orthographic projection area area of wearable equipment, wherein the above coordinate system establishes virtual coordinates covering the surface of the wearable equipment. The touch sensor also comprises a plurality of power generation units arranged on the surface of the wearable equipment; each power generation unit is correspondingly provided with an address memory, and the address memory is used for storing coordinate values of each power generation unit in a coordinate system; when each power generation unit generates an electric signal, the electric signal is processed by the signal processing circuit to generate a clear digital signal, and the processor classifies the received coordinate information according to horizontal coordinates or vertical coordinates; the coordinate values of the same horizontal coordinates or vertical coordinates form a group, then the processor compares the vertical coordinates or horizontal coordinates in the same group and the minimum value and the maximum value obtained after comparison, the weighted average of the difference values of all the coordinates is calculated, the minimum weighted average is the adjacent nearest point, and the contact area can be formed by connecting the connecting lines between the nearest points.

An adjustable roll stabilizer (9), for a chassis of a motor vehicle, having an actuator (13) arranged between two partial sections (10,11) of a stabilizer. The actuator has an actuator housing (20) and an output (21) and is designed to produce a torsional moment acting between the two partial sections. A damping element (23,25) is arranged outside of the actuator.

A stereo capacitor microphone unit includes: two unidirectional microphone units integrally formed with respective fixed electrodes of the unidirectional microphone units facing each other; and an insulating spacer that is interposed between the fixed electrodes and provided with a gap formed at a portion of an outer periphery towards radial direction. The gap communicates fixed electrode rear spaces of the respective unidirectional microphone units with an external space to serve as a common rear acoustic terminal for the unidirectional microphone units.

The invention relates to an integrated circuit arrangement for a position sensor for measuring angles or distances, wherein the circuit arrangement comprises:a measurement substrate, which defines a measurement plane and which is configured such that it comprises a plurality of corners;at least three Hall elements, which are arranged on the measurement substrate such that areas of the Hall elements, which are sensitive to a magnetic field, extend in the measurement plane and / or form a part of the measurement plane, and that a virtual polygon, which is formed by the Hall elements, is rotated with respect to the measurement substrate such that the Hall elements are each located at an outer edge of the measurement substrate and have a distance to a center of an edge of the corresponding outer edge amounting to at maximum 25% of a total length of the corresponding outer edge, whereinthe Hall elements are, in an intended use of the circuit arrangement during the measurement, configured to respectively output an output signal, which corresponds to a magnetic field strength of a magnet to be detected; anda processing electronic system, to which the output signals of the Hall sensors are delivered in the intended use of the circuit arrangement during the measurement.

A three-dimensional memory device and a manufacturing method thereof are provided. The three-dimensional memory device includes a plurality of bottom source lines extending in a first horizontal direction, a stacked structure disposed on the bottom source lines, a plurality of bit lines extending in a second horizontal direction, and a plurality of pillar structures passing through the stacked structure. The stacked structure includes a plurality of composite structures spaced apart from one another and respectively located at different levels. The composite structures each include a gate conductive layer and a ferroelectric layer surrounding the gate conductive layer. Each of the pillar structures connected between the corresponding bit line and the corresponding bottom source line includes a barrier layer, a gate insulating layer, and a channel layer. The ferroelectric layer of each composite structure is insulated from the gate insulating layer of the pillar structure by the barrier layer.

A touch panel such that its electrodes can be easily designed and fabricated, horizontal and vertical equipotential lines having necessary and sufficient uniformity are formed in a resistive film. Thetouch panel (10) has a substrate (12), a rectangular resistive film (14) formed on the substrate (12), and electrode (16) along the four sides of the resistive film (14). The electrode (16) is composed of gaps (20) and divided electrodes (22). The divided electrodes (22) are lined along the sides of the resistive film (14). Both ends of a line of divided electrodes (22) along each side are connected to terminals (18). The divided electrodes (22) have the same shape and arranged repeatedly. The ratio of the length of the end divided electrodes (22) to that of the inner divided electrodes otherthan the end divided electrodes (22) is 0.1:1 to 0.5:1.

The invention relates to the field of biotechnology and particularly relates to a recombinant interleukin 18 as well as a preparation method and application thereof. The rhIL-18 provided in the invention is mutated from a serine to an amino acid residue capable of being hydroxylated at a 10 site of N-terminus; hrIL-18 shown in SEQ ID NO: 1 is used for experiments and solves problems of low solubility, poor stability, low bioactivity and the like of wild IL-18; the hrIL-18 shown in SEQ ID NO: 1 is easier to purify and is suitable for industrial production. The rhIL-18 provided in the invention can inhibit generation of microtubules in human endothelial cells, can promote activity of NK cells and promote formation of IFN-gamma, but does not affect the activity of human retinal pigment epithelial cells, so as to indicate that the rhIL-18 can be used as a medicine for treating neovascularization diseases and / or malignant tumors.

The present invention provides integrated line drivers useable for driving data signals with high data rates wherein the area consumption of the line driver is minimized and wherein the influence of electrostatic discharge devices and process tolerances are minimized too. An example of an integrated line driver according to the invention comprises a first driver stage followed by a second driver stage, and a feedback unit forming with the second driver stage a control loop. The integrated line drivers are useable for driving data signals with high data rates wherein the area consumption of the line driver is minimized and wherein the influence of ESD devices and process tolerances are minimized. Advantageously, the integrated line driver according to the invention complies with chip design methodologies, where 10 or more routing metal layers are used.