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LDMOS transistor and LDMOS transistor forming method

A transistor and semiconductor technology, applied in the fields of semiconductor devices, semiconductor/solid-state device manufacturing, electrical components, etc., can solve problems such as poor performance of fin-type LDMOS transistors, and achieve the effect of improving performance

Active Publication Date: 2016-04-27
SMIC INT NEW TECH DEV SHANGHAI CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0015] The problem solved by the present invention is the poor performance of the prior art fin-type LDMOS transistors

Method used

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  • LDMOS transistor and LDMOS transistor forming method
  • LDMOS transistor and LDMOS transistor forming method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0073] This embodiment is described by taking two adjacent LDMOS transistors with a common drain.

[0074] Incorporate references Figure 8 and Figure 9 , the semiconductor substrate 20 is provided.

[0075] In this embodiment, the semiconductor substrate 20 is a silicon substrate. The semiconductor substrate 20 has at least one fin 201 . There is an insulating layer 202 lower than the fins 201 between the fins 201 . The material of the insulating layer 202 is silicon oxide. The specific formation method is as follows:

[0076] A patterned first mask layer (not shown) is formed on the semiconductor substrate 20, and the patterned first mask layer defines the positions of the fins to be formed; using the patterned first mask The layer is a mask to etch the semiconductor substrate 20 to form at least one raised structure, and then an insulating layer 202 with the same height and lower than the raised structure is formed between the raised structures, and the insulating la...

Embodiment 2

[0160] refer to Figure 12 , the present invention also provides an LDMOS transistor structure, two adjacent LDMOS transistors share one drain. Specifically, it includes: a semiconductor substrate 20, the semiconductor substrate 20 has a fin 201; a first gate structure 21 and a second gate structure spanning the fin 201 and covering the top and sidewalls of the fin 201 respectively 22. The first gate structure 21 and the second gate structure 22 cover the top and sidewalls of the fins 201 respectively;

[0161] The first source electrode 251 and the drain electrode 264 in the semiconductor substrate on both sides of the first gate structure 21 , the second source electrode 252 and the drain electrode in the semiconductor substrate on both sides of the second gate structure 22 264, the drain 264 is the common drain of two adjacent LDMOS transistors;

[0162] The LDMOS transistor in this embodiment further includes:

[0163] The drift region 203, the drift region is located i...

Embodiment 3

[0173] refer to Figure 13 , This embodiment provides a method for forming an LDMOS transistor. The difference between this embodiment and Embodiment 1 is that Embodiment 1 has two sources, which are a first source electrode and a second source electrode respectively. The first source and the second source share one drain. The LDMOS transistor in this embodiment has only one source 35, and the drain 364 in this embodiment is not a common drain. There is only one gate structure 31 between the source electrode 35 and the drain electrode 364 in this embodiment. The gate structure 31 partially covers the drift region 303 . Dummy drain 361 , dummy drain 362 , dummy drain 363 , and drain 364 are all within drift region 303 . In other embodiments, the number of dummy drains is not limited or there is no dummy drain, which belong to the protection scope of the present invention.

[0174] A first barrier layer 331 to a first barrier layer 334 are formed on the drift region to defin...

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PUM

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Abstract

The invention discloses an LDMOS transistor and an LDMOS transistor forming method. The LDMOS transistor forming method comprises the steps of: providing a semiconductor substrate which is provided with fin parts; forming a drift region in each fin part; forming gate structures crossing the fin parts, wherein the gate structures cover the top part and side walls of the fin parts, and the gate structures cover the drift regions partially; forming source material layers and drain material layers in the fin parts on both sides of each gate structure, wherein the drain material layers are positioned in the drift regions; and carrying out ion implantation in the source material layers to form sources, and carrying out ion implantation in the drain material layers to form a drain. The LDMOS transistor formed by adopting the LDMOS transistor forming method has improved performance.

Description

technical field [0001] The present invention relates to the field of semiconductors, and in particular, to a method for forming an LDMOS transistor and an LDMOS transistor. Background technique [0002] Lateral Diffusion MOS (LDMOS) is widely used in power devices due to its high breakdown voltage and compatibility with CMOS technology. Compared with traditional MOS transistors, LDMOS devices have at least one isolation structure between the drain region and the gate. When the LDMOS is connected to a high voltage, the isolation structure is used to withstand a higher voltage drop, so as to obtain a high breakdown voltage. [0003] The prior art discloses a fin-type LDMOS transistor, and the formation method of the above-mentioned fin-type LDMOS transistor is as follows: [0004] refer to figure 1 and figure 2 , providing a semiconductor substrate 10 having a first fin 111 , a second fin 112 and a third fin 113 located between the first 111 and the second fin 112 . The ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/336H01L29/78H01L29/06
Inventor 李勇赵杰
Owner SMIC INT NEW TECH DEV SHANGHAI CO LTD
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