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Manufacturing method of target assembly

A production method and target technology, which are applied in the production field of target components, can solve the problems of lack of binding performance, inability to obtain binding rate and binding strength of target components, etc.

Inactive Publication Date: 2016-02-03
KONFOONG MATERIALS INTERNATIONAL CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] However, molybdenum-silicon materials do not have good bonding properties with various solders (In, SnAgCu, or Sn, etc.) target components

Method used

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  • Manufacturing method of target assembly
  • Manufacturing method of target assembly

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Experimental program
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Embodiment Construction

[0032] As mentioned in the background art, using the existing welding method, the direct welding of the molybdenum-silicon material and the back plate has a low bonding strength, which cannot meet the requirements of the semiconductor target, that is, the molybdenum-silicon material with the required bonding rate and bonding strength cannot be obtained. Target assembly.

[0033] To this end, the present invention provides a new method for forming a target assembly. The method first provides a molybdenum-silicon material target, and then performs sandblasting on the to-be-welded surface of the target. Then, the target material is rinsed, and after the rinse treatment is performed on the target material, an activation treatment is performed on the to-be-welded surface of the target material, and after the activation treatment, an electroless plating process is used to A metal plating layer is formed on the to-be-welded surface of the target material, and the target material and ...

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Abstract

The invention discloses a manufacturing method of a target assembly. The manufacturing method comprises the steps that a target made of molybdenum silicon material is provided; a to-be-welded surface of the target is subjected to sand blasting; the target is subjected to washing treatment after the sand blasting; the to-be-welded surface of the target is subjected to activating treatment after the washing treatment; a metal coating layer is formed on the to-be-welded surface of the target by adopting a chemical plating technology after the activating treatment; and the target is welded to a back plate by utilizing the metal coating layer. With the adoption of the manufacturing method of the target assembly, the target assembly formed by the molybdenum silicon material has sufficient binding rate and bonding strength.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a method for manufacturing a target assembly. Background technique [0002] Generally, the target assembly is composed of a target and a backing plate that meet the sputtering performance. The backing plate may function as a support in the assembly of the target assembly to the sputtering stage and may conduct heat. [0003] During the sputtering process, the working environment of the target assembly is relatively harsh, for example, the working temperature of the target assembly is relatively high. Moreover, one side of the target assembly is subjected to strong cooling with cooling water, while the other side is in a high vacuum environment of 10-9Pa, thereby forming a huge pressure difference on the opposite sides of the target assembly; furthermore, the target assembly In the high-voltage electric field and magnetic field, it will be bombarded by various particle...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/34
Inventor 姚力军潘杰相原俊夫大岩一彦王学泽张涛
Owner KONFOONG MATERIALS INTERNATIONAL CO LTD
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