Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Pi-conjugated organic semiconductor molecular self-assembly structure and preparation method thereof

A molecular and molecular layer technology, applied in the field of monomolecular layer film self-assembly structure, to achieve the effect of improving the efficiency of optoelectronic devices, improving the conversion rate, and good optoelectronic properties

Active Publication Date: 2017-01-18
THE NAT CENT FOR NANOSCI & TECH NCNST OF CHINA
View PDF0 Cites 6 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] In the traditional microelectronics industry, people have been working on improving the manufacturing method to produce more delicate devices, but the theoretical limit size will soon be reached

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Pi-conjugated organic semiconductor molecular self-assembly structure and preparation method thereof
  • Pi-conjugated organic semiconductor molecular self-assembly structure and preparation method thereof
  • Pi-conjugated organic semiconductor molecular self-assembly structure and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0049] In a 1.5mL centrifuge tube, add CDI (about 0.5mg) to 1mL of 1-octylbenzene, ultrasonically disperse for about 20 minutes to completely dissolve the molecules, dilute ten times, transfer to the dropper and drop a drop of the solution (about 1μL ) to a clean HOPG surface (newly exfoliated HOPG), since both graphite and the solution are hydrophobic, the solution diffuses on the graphite surface to form a film with uniform thickness, and CDI molecules are adsorbed on the HOPG surface to form a two-dimensional high-density single-layer film nanofilm structure.

[0050] Fix the HOPG dripped with the above solution on the sample stage, and then slowly approach the STM needle tip (Pt / Ir, 80:20) to the sample surface until it is immersed in the solid / liquid interface, but does not touch the graphite surface, and then scan with A tunneling microscope (STM) was used to measure, and the STM image of the ordered CDI between the solid / liquid interface was obtained (refer to Figure 1A...

Embodiment 2

[0055] In a 1.5mL centrifuge tube, add BPMI (about 0.4mg) to 1mL of 1-octylbenzene, ultrasonically disperse for about 20 minutes to completely dissolve the molecules to ensure uniform dispersion, dilute ten times, then transfer to a dropper and drop a drop solution (about 1 μL) onto the clean and flat surface of HOPG. Since both graphite and the solution are hydrophobic, after the solution diffuses on the graphite surface and stabilizes, fix the HOPG dripped with the above solution on the sample stage, and then make the STM needle tip (Pt / Ir, 80:20) slowly approach the sample surface until it is immersed in the solid / liquid interface, but does not touch the graphite surface, scan with a scanning tunneling microscope (STM), and obtain the STM image of the ordered BPMI molecule (reference Figure 2a , Figure 2b ). Depend on Figure 2a and Figure 2b It can be seen that BPMI forms a two-dimensional ordered pore structure.

[0056] refer to Figure 2a and 2b , the brighter...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention provides two types of disc-shaped polycyclic aromatic hydrocarbon n-type organic semiconductor molecules having different symmetries, which are formed through an action between CDI or BPMI and a base along the lowest energy direction on the surface of the base, wherein a molecular film gradually reaches thermodynamic stability through changes of internal situation to form a two-dimensional structure of a high-density arrangement. By taking advantage of the self-assembly method of the disc-shaped polycyclic aromatic hydrocarbon organic molecules on a solid surface, a highly ordered semiconductor single-layer film is obtained, and the method is of great significance in the electronic transmission of such aspects as further adjusting and optimizing a field effect transistor, a diode, a light emitting diode, a solar cell and the like.

Description

technical field [0001] The present invention relates to the preparation method of symmetrical and asymmetrical discoidal polycyclic aromatic hydrocarbon n-type organic semiconductor macromolecules in highly oriented pyrolytic graphite (HOPG) film, particularly relates to preparing distinct Different dense and porous monolayer self-assembled structures. Background technique [0002] Organic semiconductor molecular thin films have important applications in field-effect transistors, diodes, light-emitting diodes, solar cells (SC), etc., so their preparation methods have attracted widespread attention. Organic semiconductor molecular thin films have many advantages: for example, organic materials are easy to obtain, which can effectively reduce the cost of device preparation; organic thin films can be prepared on a large scale and are suitable for the production of large-area devices; the preparation process of organic electronic devices is simpler and does not require strict e...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): B82Y30/00H01L51/00H10K99/00
CPCB82Y30/00H10K85/111Y02E10/549
Inventor 刘晓平江鹏张占军梁明会魏倩李鑫
Owner THE NAT CENT FOR NANOSCI & TECH NCNST OF CHINA
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products