The invention provides a process method for
processing titanium nitride residues on an aluminum
welding pad. The process method comprises the following steps of: step 1,
etching a
barrier layer which is not covered by a
photoresist layer, a substrate below the
barrier layer and a top
metal barrier layer until a
metal layer is etched; step 2, completely removing the
photoresist layer; step 3, depositing
silicon nitride; covering the
silicon nitride on the barrier layer, the top of a side wall of the substrate, a side wall of the
metal barrier layer and the upper surface of the metal layer; step 4, carrying out
photoresist layer deposition on the upper surface of the metal layer; utilizing a condition of aluminum
welding pad photoetching to carry out
coating and developing of light resistance; step 5,
etching the
silicon nitride which is not covered by the photoresist layer; step 6, removing the photoresist layer; and step 7, carrying out chemical washing. According to the process method for
processing the
titanium nitride residues on the aluminum
welding pad disclosed by the invention, under the
precondition of keeping the appearance of the aluminum welding pad, the
titanium nitride residues on the aluminum welding pad can be removed and overmuch loss of bottom aluminum is not caused; and meanwhile, the caused waste of wafers can be greatly avoided, the process is simple and extra equipment and materials do not need to be added.