45results about How to "Avoid extensive cracking" patented technology

Polymerization of siloxane is improved using a gypsum-based slurry that includes stucco, Class C fly ash, magnesium oxide and an emulsion of siloxane and water. This slurry is used in a method of making water-resistant gypsum articles that includes making an emulsion of siloxane and water, then combining the slurry with a dry mixture of stucco, magnesium oxide and Class C fly ash. The slurry is then shaped as desired and the stucco is allowed to set and the siloxane polymerizes.The resulting product is useful for making a water-resistant gypsum panel having a core that includes interwoven matrices of calcium sulfate dihydrate crystals and a silicone resin, where the interwoven matrices have dispersed throughout them a catalyst comprising magnesium oxide and components from a Class C fly ash.

A high pressure discharge lamp includes a luminous bulb enclosing a luminous substance therein; and a sealing portion for retaining airtightness of the luminous bulb. The sealing portion has a first glass portion extending from the luminous bulb and a second glass portion provided at least in a portion inside the first glass portion, and the sealing portion has a portion to which a compressive stress is applied.

A conductive sintered compact for fixing electrodes inside an electronic device envelope is provided. The sintered compact is made of a conductive composition calcined. The conductive composition includes at least 10 vol % to 60 vol % of Ag particles, a low melting-point glass containing 10 vol % to 80 vol % of B2O3, 0 vol % to 70 vol % of ceramic particles, and a metal oxide series pigment. The total amount of the ceramic particles and the metal oxide series pigment is at least 10 vol % or more.

A nitride semiconductor device includes a GaN substrate having a single-crystal GaN layer at least on its surface and plurality of device-forming layers made of nitride semiconductor. The device-forming layer contacting the GaN substrate has a coefficient of thermal expansion smaller than that of GaN, so that a compressive strain is applied to the device-forming layer. This result in prevention of crack forming in the device-forming layers, and a lifetime characteristics of the nitride semiconductor device is improved.

The preferable method of manufacturing the EL panel comprises a panel precursor formation step of forming a panel precursor including a substrate, a sealing plate disposed facing the substrate, an EL device (EL device portion) provided on a surface of the substrate facing the sealing plate, and a sealant comprising a curable adhesive composition filled between the substrate and the sealing plate; a first curing step of irradiating the sealant with light so as to partially cure the curable adhesive composition; and a second curing step of heating the sealant after the irradiation with the light so as to further cure the curable adhesive composition.

In this invention a cementitious capillary crystalline waterproof material with an eka-molecular sieve structure and its manufacturing method is disclosed. The major ingredient of this material is Portland cement; the accessories include silicon dioxide, alumina, magnesia, calcium sulphonate, methlycellulose, quick-setting agent and sodium aluminate, etc. Put separately major ingredient and accessories premixed in given proportion separately into the major ingredient bin and the accessory bins. The major ingredient passing through an impulse flowmeter is carried to the dosing machine; and in the same time, the premixed accessories are automatically weighed by the weighing device using gewichtsabnahme method when they are carried to the above dosing machine; they are mixed in the premixing machine and the refine-mixing machine and prepared to the product. The product is mixed with water and forms slurry. After setting, it becomes coating layer with an eka-molecular sieve structure which is water-tight and breathes freely. The coating has high compressive strength, resistance to very high and low temperatures, and resistant to acid, chlorides, and Sulphates so on. It also has self-healing ability to small crack when meet with water. It is non-toxic, odorless, with long service life, and convenient to application. The material can be used at wide range in underground facilities, tunnel, cave depot, bridge, swimming pool, toilet, sewage treating reservoir, dam, etc.

The present invention provides a copper film with large grains, where, at least one surface, more than 50% area of the copper film is [100]-oriented grains, and the average size of [100]-oriented grains is more than 150 μm. The grains on the copper film have large grain sizes and high preferred orientation, so that the copper film is provided with excellent properties such as flexibility, stability and electro-migration resistance. A copper foil laminate with the above-mentioned copper film is also herein provided.

The invention provides a concrete structure of which at least a part has been formed by slip forming with panels inside the slip form, the panels facing the slip form.

An adhesive for filling in gaps between stones, the adhesive including at least 100 weight parts of an unsaturated polyester resin suitable for air-drying, between 1 and 5 weight parts of hydrogenated castor oil, between 0 and 60 weight parts of micron silica, and between 1 and 15 weight parts of an anti-shrinking agent. The adhesive overcomes the disadvantages of conventional marble glue, such as, poor air-drying property, poor shrinkage resistance, and poor permeability. The adhesive of the invention has good permeability, strong shrinkage resistance, and high brightness after being polished, and is not sticky after curing. The invention solves the difficulty of gap-filling of stone by providing a new category of marble glue.

A PZT-based ferroelectric thin film is formed by coating a PZT-based ferroelectric thin film-forming composition on a lower electrode of a substrate one or two or more times, pre-baking the composition, and baking the composition to be crystallized, and this thin film includes PZT-based particles having an average particle size in a range of 500 nm to 3000 nm when measured on a surface of the thin film, in which heterogeneous fine particles having an average particle size of 20 nm or less, which are different from the PZT-based particles, are precipitated on a part or all of the grain boundaries on the surface of the thin film.

A circumferential portion of an epitaxial wafer is removed to remove an anomalously grown elevated portion formed in a circumferential chamfer. An epitaxial layer in the circumferential portion is removed with a width q=t to 5t wherein t is the thickness of the epitaxial layer so that the surface of a substrate is exposed. Therefore, cracking of the epitaxial layer in processing steps can be prevented.