243results about How to "Relaxation stress" patented technology

There is provided a method of removing trap levels and defects, which are caused by stress, from a single crystal silicon thin film formed by an SOI technique. First, a single crystal silicon film is formed by using a typical bonding SOI technique such as Smart-Cut or ELTRAN. Next, the single crystal silicon thin film is patterned to form an island-like silicon layer, and then, a thermal oxidation treatment is carried out in an oxidizing atmosphere containing a halogen element, so that an island-like silicon layer in which the trap levels and the defects are removed is obtained.

A method is described for modifying at least one property of a tissue of or near a nasal valve of a nose, without using a surgical incision or an implant, to decrease airflow resistance or perceived airflow resistance in a nasal airway. The method may involve contacting a treatment element of a treatment device with the at least one tissue inside the nasal airway, with sufficient force to at least temporarily deform the at least one tissue, applying energy to, or removing energy from, the at least one tissue, using the treatment element, and removing the treatment element from the nostril.

A semiconductor device includes: a semiconductor chip mounted on a mounting substrate; a first resin filling a gap between the chip and the substrate; a frame-shaped stiffener surrounding the chip; a first adhesive for bonding the stiffener to the substrate; a lid for covering the stiffener and an area surrounded by the stiffener; and a second resin filling a space between the stiffener and the chip. A thermal expansion coefficient of the second resin is smaller than that of the first resin. The first resin includes an underfill part filling a gap between the chip and the substrate and a fillet part extended from the chip region.

The invention is intended for providing a semiconductor package structure which prevents degradation in characteristics of a semiconductor device, and breakage of interconnections, when the semiconductor device is packaged on a circuit substrate. In the package structure having the semiconductor device mounted on the circuit substrate, bump electrodes of the semiconductor device are placed on input / output terminal electrodes of the circuit substrate and are electrically and mechanically connected thereto by bonding with a conductive adhesive, and the semiconductor device is bonded and fixed to the circuit substrate by a resin film formed previously on a surface of a main body of the circuit substrate. The structure does no damage to a semiconductor functional part and to interconnections, and allows mounting with a lower load as compared to structures using conventional anisotropic conductive films and the like.

Methods and devices for treating nasal airways are provided. Such devices and methods may improve airflow through an internal and / or external nasal valve, and comprise the use of mechanical re-shaping, energy application and other treatments to modify the shape, structure, and / or air flow characteristics of an internal nasal valve, an external nasal valve or other nasal airways.