242results about How to "Relaxation stress" patented technology

There is provided a method of removing trap levels and defects, which are caused by stress, from a single crystal silicon thin film formed by an SOI technique. First, a single crystal silicon film is formed by using a typical bonding SOI technique such as Smart-Cut or ELTRAN. Next, the single crystal silicon thin film is patterned to form an island-like silicon layer, and then, a thermal oxidation treatment is carried out in an oxidizing atmosphere containing a halogen element, so that an island-like silicon layer in which the trap levels and the defects are removed is obtained.

MEMS devices require special cavity formation and sealing steps such as wafer bonding which reduce the yield and increase the cost. In addition, it is difficult to form a cavity of a large area by the LSI process owing to a residual stress of a sealing film which will be a lid. This leads to a difficulty of realizing an integrated MEMS having a MEMS and a high-performance LSI mounted on one substrate. The lid (or diaphragm) covering therewith a cavity is equipped with slits or beams. During the formation of the cavity, the slits are deformed to absorb and relax the internal stress of the thin sealing film. Then, the cavity is sealed by filling the open portions of the film overlying the cavity between the inside and outside of the cavity. The cavity is formed by removing a portion of the interlayer film of LSI multilevel interconnects and the lid is made of a LSI-process thin film.

A method is described for modifying at least one property of a tissue of or near a nasal valve of a nose, without using a surgical incision or an implant, to decrease airflow resistance or perceived airflow resistance in a nasal airway. The method may involve contacting a treatment element of a treatment device with the at least one tissue inside the nasal airway, with sufficient force to at least temporarily deform the at least one tissue, applying energy to, or removing energy from, the at least one tissue, using the treatment element, and removing the treatment element from the nostril.

Methods and devices for treating nasal airways are provided. Such devices and methods may improve airflow through an internal and / or external nasal valve, and comprise the use of mechanical re-shaping, energy application and other treatments to modify the shape, structure, and / or air flow characteristics of an internal nasal valve, an external nasal valve or other nasal airways.

A semiconductor device includes: a semiconductor chip mounted on a mounting substrate; a first resin filling a gap between the chip and the substrate; a frame-shaped stiffener surrounding the chip; a first adhesive for bonding the stiffener to the substrate; a lid for covering the stiffener and an area surrounded by the stiffener; and a second resin filling a space between the stiffener and the chip. A thermal expansion coefficient of the second resin is smaller than that of the first resin. The first resin includes an underfill part filling a gap between the chip and the substrate and a fillet part extended from the chip region.

Stress in a silicon nitride contact etch stop layer on a CMOS structure having NMOS and PMOS devices is selectively relieved by selective implantation of oxygen-containing or carbon-containing ions resulting in there being no tensile stress in areas of the layer above the PMOS devices and no compressive stress in areas of the layer above the NMOS devices.

A two-step push-on switch in which the operating stroke of an upper movable contact is ensured, and particularly the width of the switch is reduced while the durability of the upper movable contact is improved, the number of parts is reduced, an the operation is improved. Dome-like movable contacts are placed in two or upper and lower stages in an invertible manner in a recess of an insulative body having a plurality of stationary contacts, and the upper movable contact is formed into an oval shape.

The invention is intended for providing a semiconductor package structure which prevents degradation in characteristics of a semiconductor device, and breakage of interconnections, when the semiconductor device is packaged on a circuit substrate. In the package structure having the semiconductor device mounted on the circuit substrate, bump electrodes of the semiconductor device are placed on input / output terminal electrodes of the circuit substrate and are electrically and mechanically connected thereto by bonding with a conductive adhesive, and the semiconductor device is bonded and fixed to the circuit substrate by a resin film formed previously on a surface of a main body of the circuit substrate. The structure does no damage to a semiconductor functional part and to interconnections, and allows mounting with a lower load as compared to structures using conventional anisotropic conductive films and the like.

A board assembly, an optical transceiver using same, and a method for mounting a board assembly that can relax a stress occurred at a flexible board. A board assembly 1 comprises a flexible board 2, a first rigid board 3, and a second rigid board 4. The first rigid board 3 and the second rigid board 4 are connected with each other by means of the flexible board 2. Since the flexible board 2 is preformed before the attachment, the stress occurred at the flexible board 2 can be relaxed.

Methods and devices for treating nasal airways are provided. Such devices and methods may improve airflow through an internal and / or external nasal valve, and comprise the use of mechanical re-shaping, energy application and other treatments to modify the shape, structure, and / or air flow characteristics of an internal nasal valve, an external nasal valve or other nasal airways.

There is provided a semiconductor device which comprises a first interlayer insulating film (first insulating film) formed over a silicon (semiconductor) substrate, a capacitor formed on the first interlayer insulating film and having a lower electrode, a dielectric film, and an upper electrode, a fourth interlayer insulating film (second insulating film) formed over the capacitor and the first interlayer insulating film, and a metal pattern formed on the fourth interlayer insulating film over the capacitor and its periphery to have a stress in an opposite direction to the fourth interlayer insulating film. As a result, characteristics of the capacitor covered with the interlayer insulating film can be improved.