59results about How to "Surface roughening" patented technology

The process for producing a magnet according to the invention is characterized by comprising a first step in which a heavy rare earth compound containing Dy or Th as a heavy rare earth element is adhered onto a sintered compact of a rare earth magnet and a second step in which the heavy rare earth compound-adhered sintered compact is subjected to heat treatment, wherein the heavy rare earth compound is a Dy or Th iron compound.

A platy light guide (4) which guides light emitted from an LED (2) and has a light incident end surface (41) for receiving light from the LED (2) and a light outputting surface (43) for outputting a guided light, wherein a plurality of lens rows extending along the directivity direction (X direction) of a light guide incident light in a plane along the light outputting surface (43) and arranged in parallel to each other are formed on a rear surface (44). In the vicinity of the LED (2), the shape of the section perpendicular to their extending directions of the plurality of lens rows is such that the existence proportion of an angle component having an absolute value of at least 20° and up to 50° of an inclination angle formed by a tangent and a lens row forming surface in each fine area is at least 10%. A light deflection element (6) disposed adjacent to the light guide light outputting surface (43) is provided on the light entrance surface (61) thereof with a plurality of lens rows (61a) extending in a direction parallel to the light guide light incident end surface (41) and being parallel to each other. Accordingly, a high-quality surface light source device free from brightness unevenness caused by a fewer LEDs used is provided.

A light guide which guides light emitted from an LED includes a light incident end surface for receiving light, a light outputting surface for outputting a guided light, and a lens forming surface that has a plurality of elongated lenses arranged in parallel to each other and formed along the directivity of light incident from the LED, such that a plurality of micro regions are defined over the plurality of elongated lens. In the vicinity of the LED, a distribution of micro regions having an inclination angle between 20° and 50° is at least 10% over all micro regions. A light deflection element disposed adjacent to the light guide light outputting surface includes a light entrance surface having a plurality of lenses formed thereon that are parallel to each other and extend in a direction parallel to the light guide light incident end surface.

A method of dissecting urethra obstructing tissue. The method includes capturing urethra obstructing tissue between portions of an implant and applying pressure on the tissue caught between the portions of the implant, for longer than 1 hour, until the tissue dies or falls off.

In a semiconductor substrate having a notch in an edge portion thereof, each of the two shoulder portions of the notch is configured as an arc and the difference in curvature between the two shoulder portions of the notch is not less than 0 mm and not more than 0.1 mm.

A fuel cell separator plate comprising a portion in contact with an electrode, and a sealing portion provided around the contact portion, the contact portion having a larger surface roughness (Rmax) than that of the sealing portion. It is preferably a molded separator plate made of a composite carbon material comprising carbon and a thermosetting resin.

A method for enhancing electrical injection efficiency and light extraction efficiency of a light-emitting device is disclosed. The method includes the steps of: providing a site layer on the light-emitting device; placing a protection layer on the site layer; forming a cavity through the protection layer and the site layer; and growing a window layer in the cavity. The shape of the window layer can be well controlled by adjusting reactive temperature, reactive time, and N2 / H2 concentration ratio of atmosphere such that light escape angle of the window layer can be changed.

A GaN-based LED structure is provided so that the brightness and luminous efficiency of the GaN-based LED are enhanced effectively. The greatest difference between the GaN-based LEDs according to the invention and the prior arts lies in the addition of a masking buffer layer on top of the p-type contact layer and a p-type roughened contact layer on top of the masking buffer layer. The masking buffer layer could be formed using MOCVD to deposit SixNy (x,y≧1), MgwNz (w,z≧1), or AlsIntGa1-s-tN (0≦s,t<1, s+t≦1) heavily doped with Si and / or Mg. The masking buffer layer is actually a mask containing multiple randomly distributed clusters. Then, on top of the masking buffer layer, a p-type roughened contact layer made of p-type AluInGa1-u-vN (0≦u,v<1, u+v≦1) is developed. The p-type roughened contact layer does not grow directly on top of the masking buffer layer. Instead, the p-type roughened contact layer starts from the top surface of the underlying p-type contact layer not covered by the masking buffer layer's clusters. The p-type roughened contact layer then grows upward until it passes (but does not cover) the mask of the masking buffer layer for a specific distance. The total internal reflection that could have been resulted from the GaN-based LEDs' higher index of refraction than that of the atmosphere could be avoided. The GaN-based LEDs according to the present invention therefore have superior external quantum efficiency and luminous efficiency.

A light-emitting diode (LED) and a method for manufacturing the same are described. The method for manufacturing the LED comprises the following steps. An illuminant epitaxial structure is provided, in which the illuminant epitaxial structure has a first surface and a second surface on opposite sides, and a substrate is deposed on the first surface of the illuminant epitaxial structure. A metal layer is formed on the second surface of the illuminant epitaxial structure. An anodic oxidization step is performed to oxidize the metal layer, so as to form a metal oxide layer. An etching step is performed to remove a portion of the metal oxide layer, so as to form a plurality of holes in the metal oxide layer.

In a method of manufacturing a semiconductor device 10 including a wiring board 11 having a ground terminal 38, a semiconductor chip 12 and passive components 14 and 15 which are electronic components mounted on the wiring board 11, and a sealing resin 19 containing a silica filler for sealing the semiconductor chip 12 and the passive components 14 and 15, the silica filler present on a surface of the sealing resin 19 is dissolved with a hydrogen fluoride solution, and a shield layer 21 which is electrically connected to the ground terminal 38 is then formed on the surface of the sealing resin 19 by a plating method.

A magnetic sheet, which contains: a magnetic layer including a magnetic powder and a resin composition containing the magnetic powder therein; and a convex-concave forming layer, in which the convex-concave forming layer has Bekk smoothness of 70 sec / mL or less. A method for producing a magnetic sheet, which contains: adding a magnetic powder to a resin composition to prepare a magnetic composition, and giving the magnetic composition a shape to form a magnetic layer; and placing and stacking a convex-concave forming layer and a pattern transferring material on a surface of the magnetic layer in this order, and hot pressing the stacked layers so as to bond the convex-concave forming layer with the magnetic layer to form a laminate, as well as to transfer a surface configuration of the pattern transferring material to a surface of the laminate of the convex-concave forming layer and the magnetic layer.

The present invention relates to a device and a method for dividing up substrates (2) in wafer form (e.g. wafers), which is used in the semiconductor industry, MST (microstructure technology) industry and photovoltaic industry, whereby improved reliability of the process and lower reject rates are accomplished. This object is achieved according to the invention by using adhesion forces that act between the substrates in wafer form and the devices (1) thereby used.

A GaN-based LED structure is provided so that the brightness and luminous efficiency of the GaN-based LED are enhanced effectively. The greatest difference between the GaN-based LEDs according to the invention and the prior arts lies in the addition of a masking buffer layer and a roughened contact layer on top of the masking buffer layer. The masking buffer layer contains randomly distributed clusters made of a group-IV nitride SixNy (x,y≧1), a group-II nitride MgwNz (w,z≧1), or a group-III nitride AlsIntGa1−s−tN (0≦s,t<1, s+t≦1) heavily doped with at least a group-II and group-IV element such as Mg and Si. The roughened contact layer, made of AluInvGa1−u−vN (0≦u,v<1, u+v≦1), starts from the top surface of an underlying second contact layer not covered by the masking buffer layer's clusters, and then grows upward until it passes (but does not cover) the clusters of the masking buffer layer for an appropriate distance. The total internal reflection that could have been resulted from the GaN-based LEDs' higher index of refraction than that of the atmosphere could be avoided.