The invention relates to a power MOS device temperature rise and
thermal resistance component test device and method and belongs to the power MOS device
reliability design and test field. According to the test device and method of the invention, a
fast switching switch of drain-source
voltage and gate-source
voltage signal control of a tested power MOS device and a
fast switching switch of drain-source high-current work are designed; and an FPGA is adopted to design the acquisition and setting function of drain-source
voltage, gate-source voltage and drain-source current. In a testing process, a temperature-sensitive parameter curve is obtained at first; operating current is applied to the device, so that the temperature of the device can rise; after the output power of the device achieves a
steady state, the operating current is
cut off, and test current is switched on; the junction voltage of the drain-source parasitic
diode of the power MOS device is acquired, so that the
junction temperature curve of the device can be obtained correspondingly;
processing analysis is carried out through adopting a structural
function method, so that the
thermal resistance components of the power MOS device can be obtained. With the power MOS device temperature rise and
thermal resistance component test device and method of the invention adopted, the problems of high prices of test instruments, complicated operation of measurement technologies and long measurement period can be solved.