The invention relates to a semiconductor device, and discloses a novel power semiconductor device comprising a substrate (1), an anode P+ region (5), an anode N+ region (4), anode metal (12), an N-type drift region (3), a field oxide layer (16), a cathode P+ region (8), a cathode P-type body region (7), a P-type channel region (6), an emitting electrode N+ region (9), cathode metal (11), a poly-silicon gate (14), a gate oxide layer (10), poly-silicon gate metal (13) and P-type cylinder regions (17,18). The two P-type cylinder regions (17, 18) are additionally arranged in the P-type channel region (6) and the anode P+ region (5), and the structure that the anode P+ region (5) and the anode N+ region (4) are arranged in an alternating way is adopted so that the inverse resistance effect of the device is inhibited, the latch-up effect of the device in the high-current working state is overcome, turn-off speed and voltage resistance of the device are enhanced and power consumption of the device is reduced.