OTP memory

Abstract

The invention provides an OTP memory which includes a memory unit array, which is composed of a plurality of memory units, and a peripheral circuit structure. Each memory unit includes a selectron and a memotron. The peripheral circuit structure includes a bit line, a word line and a voltage bus used for accessing a programming voltage. Grid electrodes of the selectron and the memotron are connected to the word line. A source electrode or a drain electrode of the selectron is connected to the bit line. Current-limiting resistors are disposed on the word line, and the bit line and/or the voltage bus used for accessing the programming voltage. The OTP memory also comprises substrate protective rings, each of which encircling at least two adjacent memory units. The current-limiting resistors can inhibit generation of hot carrier and prevent latch-up effect. In addition, each protective ring can at least enclose two adjacent memory units, so that the OTP memory is reduced in area when compared with the prior art.

Description

technical field [0001] The invention relates to the technical field of memory, in particular to an OTP memory. Background technique [0002] In the field of embedded non-volatile memory, OTP (onetime programmable, one-time programmable) memory based on antifuse structure is widely used because of its high stability, complete compatibility with CMOS process, and easy programming. [0003] The schematic diagram of the circuit connection structure of a storage unit of the OTP memory based on the antifuse structure is as follows: figure 1 As shown, the memory unit includes two MOS transistors, which are respectively the selection transistor M1 and the antifuse storage transistor M2, wherein the gates of the selection transistor M1 and the antifuse storage transistor M2 are connected to the word line WL0, and the selection transistor The drain of M1 is connected to bit line BL0. composition figure 1 The MOS transistor of the storage unit shown is described by taking an NMOS tr...

AI Technical Summary

Problems solved by technology

[0008] In order to solve the problem of large area of ​​OTP memory in the prior art, the present invention provides a kind of OTP memory, to prevent the occurrence of latch-up effect of memory

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