Anti-latch circuit and integrated circuit

Abstract

The invention discloses an anti-latch circuit, comprising a first transistor, a second transistor and a control circuit, wherein the control end of the first transistor receives a first control voltage, and a first end of the first transistor receives a first power supply voltage; the second transistor has an opposite type of the first transistor, the control end of the second transistor receivesa second control voltage and is connected with a second end of the first transistor, a first end of the second transistor is connected with the control end of the first transistor, and a second end ofthe second transistor receives a second power supply voltage; and the control circuit is arranged on a path formed by the first transistor and the second transistor between the first power supply voltage and the second power supply voltage and is used to cut off the path when the first control voltage and / or the second control voltage exceed / exceeds a preset range. According to the anti-latch circuit provided by the invention, the control circuit is arranged on the path formed by the first transistor and the second transistor between the first power supply voltage and the second power supplyvoltage, the control circuit cuts off the path when the first control voltage and / or the second control voltage exceed / exceeds the preset range, and thus the occurrence of a latch-up effect in a power-on state can be prevented.

Description

technical field [0001] The invention relates to the technical field of integrated circuits, in particular to an anti-latch circuit and an integrated circuit. Background technique [0002] With the development of the IC manufacturing process, the size of the chip is getting smaller and smaller, and the chip packaging density and integration are getting higher and higher, and the possibility of latch-up (Latch up) will increase, and the modules will interfere with each other. The possibility will also increase. There are parasitic transistors (also known as parasitic thyristors, SCR for short) in general integrated circuits. The latch-up effect means that the parasitic bipolar transistors are triggered and turned on, forming a low-impedance and large-current path between the power supply VDD and the ground GND. , causing the circuit to fail to work properly, or even burn out. Such parasitic bipolar transistors are found in various parts of integrated circuits, including inpu...

AI Technical Summary

Problems solved by technology

There are parasitic transistors (also known as parasitic thyristors, SCR for short) in general integrated circuits. The latch-up effect means that the parasitic bipolar transistors are triggered and turned on, forming a low-impedance and large-current path between the power supply VDD and the ground GND. , causing the circuit to fail to work properly, or even burn out

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