Insulated gate bipolar transistor (IGBT) with anti-latchup effect

Abstract

The invention discloses an insulated gate bipolar transistor (IGBT) with an anti-latchup effect, belonging to the technical field of power semiconductor devices. In the invention, partial SOI silicon wafer is used through an ion implantation, deposition or thermal growth method or directly; an isolation medium layer is arranged on the interface between the P-type base region and an N-drift region; a current channel for the hole current in the N-drift region to flow into an N-type source region through the P-type base region is blocked; and therefore, the opening of a parasitic NPN transistor in the IGBT structure can be effectively prevented, and the latchup effect caused by the NPNP structure in the IGBT is avoided so as to improve the current bearing capability of the device and providing a larger safe working region. The IGBT provided by the invention can be applied to the field of low-power and high-power semiconductor power devices as well as power integration circuits.

Description

technical field [0001] The invention belongs to the technical field of power semiconductor devices, and relates to insulated gate bipolar transistors (IGBTs), more specifically, to IGBT devices resistant to latch-up effects. Background technique [0002] As an indispensable core device of contemporary power electronics technology, power devices have developed rapidly in recent decades. With the continuous deepening of research, power devices have been developing in the direction of high frequency, high withstand voltage and low loss. As a gate-controlled switching device, IGBT uses the conductance modulation effect to reduce the conductance voltage drop of the device, caters to the development direction of power devices, and becomes an indispensable power product for medium and high voltage switches and intermediate frequency inverters. [0003] The traditional IGBT device structure such as figure 1 As shown, N-type source region 8, P-type base region 7, N - Drift Zone 3 ...

AI Technical Summary

Problems solved by technology

However this leads to N - The conductance modulation effect in the drift region is reduced, which increases the forward voltage drop of the device, which is undesirable

2) Reduce the resistivity of the P-type base region

The resistance of the P-type base region under the N-type source region is proportional to the length of the N-type source region. By reducing the length of the N-type source region, the resistance of the P-type base region can be reduced, but this is limited by the process conditions.

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