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Power MOS device temperature rise and thermal resistance component test device and method

A technology for MOS devices and testing devices, which is applied in the direction of single semiconductor device testing, measuring devices, instruments, etc., can solve the problems of high instrument price, complicated measurement technology operation, long measurement cycle, etc., and achieves reduction of measurement cycle and optimization of measurement operation. Effect

Active Publication Date: 2017-02-22
BEIJING UNIV OF TECH
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Problems solved by technology

Related instruments include Phase11 thermal resistance tester and T3Ster thermal resistance tester, but the price of these two instruments is high, the measurement technology operation is complicated, and the measurement cycle is long

Method used

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  • Power MOS device temperature rise and thermal resistance component test device and method
  • Power MOS device temperature rise and thermal resistance component test device and method
  • Power MOS device temperature rise and thermal resistance component test device and method

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Embodiment Construction

[0029] First, the power MOS device 302 to be tested is placed on a temperature-adjustable constant temperature platform 303 . After connecting the gate, source and drain wires of the power MOS device 302, the computer 100 is the control center, which realizes the transmission of signal instructions, transmission and storage of data. The computer 100 is connected to the FPGA unit 201 via USB, and the FPGA unit 201 is controlled by timing signals, respectively connected to the test current source 202, the grid-source operating voltage source 203, the grid-source operating power switch 204, the drain-source operating power switch 206, and the computer 100 is connected to the voltage and current acquisition unit 207 via USB.

[0030] During measurement, the control computer 100 issues an instruction, and the test current source 202 produces a test current identical to the temperature coefficient of the measured power MOS device, which is connected to the drain-source two ends of t...

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Abstract

The invention relates to a power MOS device temperature rise and thermal resistance component test device and method and belongs to the power MOS device reliability design and test field. According to the test device and method of the invention, a fast switching switch of drain-source voltage and gate-source voltage signal control of a tested power MOS device and a fast switching switch of drain-source high-current work are designed; and an FPGA is adopted to design the acquisition and setting function of drain-source voltage, gate-source voltage and drain-source current. In a testing process, a temperature-sensitive parameter curve is obtained at first; operating current is applied to the device, so that the temperature of the device can rise; after the output power of the device achieves a steady state, the operating current is cut off, and test current is switched on; the junction voltage of the drain-source parasitic diode of the power MOS device is acquired, so that the junction temperature curve of the device can be obtained correspondingly; processing analysis is carried out through adopting a structural function method, so that the thermal resistance components of the power MOS device can be obtained. With the power MOS device temperature rise and thermal resistance component test device and method of the invention adopted, the problems of high prices of test instruments, complicated operation of measurement technologies and long measurement period can be solved.

Description

technical field [0001] The technology belongs to the field of reliability design and testing of power MOS devices. The invention is mainly applied to a device and a method for quickly and non-destructively determining the thermal resistance composition of a power MOS device. Background technique [0002] With the development of power MOS devices in the direction of high voltage and high current, the heat generated during operation is very high, resulting in an increase in the temperature of the active area of ​​the device, which will accelerate the deterioration of the performance of power MOS devices. The factors affecting the temperature rise of power MOS devices are also related to the heat dissipation characteristics of materials in various links in the heat dissipation path from the active area to the surrounding environment, including chips of semiconductor materials, solder, package shells, and heat sinks. Therefore, accurately measuring the temperature rise of the p...

Claims

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Application Information

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IPC IPC(8): G01R31/26
CPCG01R31/2601
Inventor 冯士维石帮兵史冬何鑫张亚民
Owner BEIJING UNIV OF TECH
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