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65 results about "Membrane stress" patented technology
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Mems transducer and manufacturing method therefor
InactiveUS20090200620A1Low chemical stabilityHigh stressFluid pressure measurement by electric/magnetic elementsSemiconductor/solid-state device manufacturingTectorial membraneMembrane stress
An MEMS transducer is constituted of a diaphragm, a plate, a support structure for supporting the diaphragm and the plate with a gap layer surrounded by an interior wall, an electrode film (e.g. a pad conductive film) for covering a contact hole formed in the support structure, and a protective film (e.g. a pad protective film) which is formed on the support structure externally of the interior wall so as to cover the side surface of the electrode film having low chemical stability. The protective film is formed in the limited area including a part of the surface of the electrode film except for its center portion and the surrounding area of the electrode film. This allows the protective film to use materials having high membrane stress such as silicon nitride or silicon nitride oxide.
Owner:YAMAHA CORP
Solid polymer electrolyte composite membrane comprising plasma etched porous support
ActiveUS7807063B2Hybrid capacitor electrolytesPaper/cardboard articlesPolymer electrolytesPolymer science
A solid polymer electrolyte composite membrane and method of manufacturing the same. According to one embodiment, the composite membrane comprises a rigid, non-electrically-conducting support, the support preferably being a sheet of polyimide having a thickness of about 7.5 to 15 microns. The support has a plurality of cylindrical pores extending perpendicularly between opposing top and bottom surfaces of the support. The pores, which preferably have a diameter of about 0.1 to 5 microns, are made by plasma etching and preferably are arranged in a defined pattern, for example, with fewer pores located in areas of high membrane stress and more pores located in areas of low membrane stress. The pores are filled with a first solid polymer electrolyte, such as a perfluorosulfonic acid (PFSA) polymer. A second solid polymer electrolyte, which may be the same as or different than the first solid polymer electrolyte, may be deposited over the top and / or bottom of the first solid polymer electrolyte.
Owner:PLUG POWER
Measuring structure and method for micro-electronic mechanical system multi-layer membrane stress and yang's modulus
The present invention is multiple-layer film stress and Young's modulus measuring structure and method for microelectronic mechanical system. The measurement structure has superposed n layers of measured film material in equal length a unequal width with fixed two ends to constitute the multiple-layer beam, reinforcing anchor areas on two ends, branched edges on two sides of each anchor area with hole in between, one insulator under the beam and electrodes under the insulator. The measurement method includes: preparing the beam structure, applying voltage across the lower electrodes, increasing the voltage until reaching the critical voltage and recording the sucking voltage, and substituting k measured sucking voltage values into the calculation model of stress and Young's modulus to obtain the stress and Young's modulus of the multiple-layer film.
Owner:SOUTHEAST UNIV
System and method for determining nonlinear membrane stress
InactiveCN103245437AAccurately determineEasy to measure deformationForce measurementFluid pressure measurementMembrane stressDegrees of freedom
Owner:付康
Method for on-line measurement of MEMS membrane stress gradient
InactiveCN101403693AHigh precisionReduce the area occupied by the chipPhase-affecting property measurementsUsing mechanical meansMembrane stressYoung's modulus
The invention discloses a method used for online measuring the stress gradient of MEMS film, comprising the steps as follows: a round film with center fixed is prepared on a structure layer film; after the round film is released, the round film generates deformation under the stress gradient inside the round film; the displacement of the edge of the round film in the vertical direction is measured by a non-contact phase-shifting typed Mirau interferometer, thus calculating the curvature radius of the round film; and the stress gradient of the film can be calculated by the young modulus and Poisson ratio of the film and the curvature radius of the round film. The measurement method is characterized in that a centrosymmetric round film with the center fixed is used as a testing structure and a choring area is fixedly clamped closely to an ideal state, thus improving the precision of the model; the non-contact optical interference method is used for measurement, thus not affecting testing structure and having good repeatability; the method is suitable for measuring the stress gradient of conductive material and non-conductive material simultaneously; and furthermore, the measurement method has the advantages of simple and convenient operation, high measurement precision, small chip occupying area and the like.
Owner:CHANGSHU NANJING NORMAL UNIV DEV RES INST
Solid polymer electrolyte composite membrane comprising plasma etched porous support
ActiveUS20060065522A1Hybrid capacitor electrolytesPaper/cardboard articlesPolymer electrolytesPolymer science
A solid polymer electrolyte composite membrane and method of manufacturing the same. According to one embodiment, the composite membrane comprises a rigid, non-electrically-conducting support, the support preferably being a sheet of polyimide having a thickness of about 7.5 to 15 microns. The support has a plurality of cylindrical pores extending perpendicularly between opposing top and bottom surfaces of the support. The pores, which preferably have a diameter of about 0.1 to 5 microns, are made by plasma etching and preferably are arranged in a defined pattern, for example, with fewer pores located in areas of high membrane stress and more pores located in areas of low membrane stress. The pores are filled with a first solid polymer electrolyte, such as a perfluorosulfonic acid (PFSA) polymer. A second solid polymer electrolyte, which may be the same as or different than the first solid polymer electrolyte, may be deposited over the top and / or bottom of the first solid polymer electrolyte.
Owner:PLUG POWER
MEMS transducer
InactiveUS7888754B2Low chemical stabilityHigh stressFluid pressure measurement by electric/magnetic elementsSemiconductor/solid-state device manufacturingTectorial membraneMembrane stress
An MEMS transducer is constituted of a diaphragm, a plate, a support structure for supporting the diaphragm and the plate with a gap layer surrounded by an interior wall, an electrode film (e.g. a pad conductive film) for covering a contact hole formed in the support structure, and a protective film (e.g. a pad protective film) which is formed on the support structure externally of the interior wall so as to cover the side surface of the electrode film having low chemical stability. The protective film is formed in the limited area including a part of the surface of the electrode film except for its center portion and the surrounding area of the electrode film. This allows the protective film to use materials having high membrane stress such as silicon nitride or silicon nitride oxide.
Owner:YAMAHA CORP
Method for determining membrane stress value of periphery clamped circular membrane under effect of concentrated force
The invention discloses a method for determining a membrane stress value of a periphery clamped circular membrane under the effect of concentrated force. The method is characterized in that the periphery of a circular membrane with a radius a, thickness h, elastic Young's modulus E and Poisson ratio v is fixed and clamped, a cylinder with a zero-friction flat bottom and a radius b is used as a loading shaft, a transverse load F is applied to the center of the circular membrane, the cylinder and the circular membrane are kept on the same axis during loading, alpha=b / a is recorded, and the membrane stress value sigma r at a place r can be accurately determined by using a load measured value F based on the static balance analysis of the axial symmetry circular membrane problem.
Owner:YANGZHOU PULAOSHI TECH DEV CO LTD
Method for analyzing crushing property of composite material coated twelve-rectangular-cross-section thin-walled beam
InactiveCN105389433AAccurate prediction of crush characteristicsQuick calculation of crush performanceGeometric CADDesign optimisation/simulationMembrane stressStress–strain curve
The present invention discloses a method for analyzing a crushing property of a composite material coated twelve-rectangular-cross-section thin-walled beam and aims to solve the problem that crushing property analysis of the thin-walled beam cannot be performed by using a finite element method or an experimental method due to a shortage of a geometrical model with a detailed structure in a conceptual design stage of crashworthiness of a car body. The method comprises the steps: 1, deducing an average crushing counter force analytic expression of a non composite material coated hollow twelve-rectangular thin-walled beam; 2, simplifying a stress-strain curve of a fiber reinforced composite material, i.e. in the stretching process, a stress-strain relationship is shown as linearity until the fiber reinforced composite material is broken, and in the compressing process, the stress is kept at a certain level without a change after yielding; 3, calculating a plastic limit bending moment and a limit yielding membrane stress of the fiber reinforced composite material coated twelve-rectangular-cross-section thin-walled beam; 4, correcting an effective crushing distance and a final folding angle of the fiber reinforced composite material coated twelve-rectangular-cross-section thin-walled beam; and 5, deducing the average crushing counter force analytic expression of the fiber reinforced composite material coated twelve-rectangular-cross-section thin-walled beam.
Owner:JILIN UNIV
Method of producing diamond film for lithography
InactiveUS6509124B1Improve flatnessImprove stress conditionSemiconductor/solid-state device manufacturingOriginals for photomechanical treatmentHydrogenMembrane stress
There is disclosed a method for producing a diamond film for lithography wherein a diamond film is formed on a silicon substrate on which an insulating film is formed or on an insulating substrate using a mixed gas of methane gas, hydrogen gas and oxygen gas as a raw material gas, and then the substrate is removed by etching treatment, and a method of producing a mask membrane for lithography wherein diamond particles fluidized with gas are brought into contact with a surface of a silicon substrate on which an insulating film is formed or an insulating substrate, a diamond film is grown on the substrate, and then the substrate is removed by etching treatment. There can be provided a method of producing a diamond film for lithography wherein a diamond film having high crystallinity and desired membrane stress can be formed on a substrate, and the film can be easily produced without degrading smoothness, membrane stress or the like after film formation.
Owner:SHIN ETSU CHEM IND CO LTD +1
Flexible display device and folding-resistant metal wire
ActiveCN104091821ALow resistivityHigh strengthSolid-state devicesSemiconductor/solid-state device manufacturingProduction lineMembrane stress
The invention provides a flexible display device and a folding-resistant metal wire. The folding-resistant metal wire comprises at least two metal stacked layers which are stacked. The metal stacked layers respectively comprise a first metal layer and a second metal layer, wherein the first metal layers and the second metal layers are made of different types of material, and material of the first metal layers and the second metal layers are selected from Al, Cu, Mo, Ti and Ag. According to the flexible display device and the folding-resistant metal wire, by regulating the thickness and the composition of all the metal layers, the resistivity of the metal wire is lowered, strength and toughness of the metal wire are enhanced, influences caused by membrane stress are eliminated, the metal wire can be more easily resistant to bending, stability of the display device is improved, and meanwhile the number of devices input to a production line can not be increased.
Owner:EVERDISPLAY OPTRONICS (SHANGHAI) CO LTD
Membrane stress control method
InactiveCN101457347AQuality is not affectedAdaptableVacuum evaporation coatingSputtering coatingMembrane stressPolymer thin films
The invention relates to a method for controlling stress of films, belonging to the thermal control field of spacecrafts. The method employs a magnetic-control sputtering film deposition technique to deposit a tin film and an aluminium film on a polymer film, subsequently pumps vacuum and heats so that Sn-Al alloy is formed between the tin film and the aluminium film and expansion distortion of the crystal lattice is generated to introduce reverse stress to counterbalance the existing intrinsic compressive stress, thus presenting a smooth film in microscopic view. The method can be applied to the stress control technique of micro-mechanical shutter films and flexible thermal-control films used for satellite thermal-control, has strong adaptability and wide applicability, does not affect quality of films, and has unique advantages on the stress control and wide application prospect.
Owner:NO 510 INST THE FIFTH RES INST OFCHINA AEROSPAE SCI & TECH
Simplified assessment method for defects of welding joint area at piping safety end of pressure vessel of AP1000 nuclear reactor
The invention relates to a simplified assessment method for defects of a welding joint area at a piping safety end of a pressure vessel of an AP1000 nuclear reactor. The method comprises the following steps of: characterizing the detected dimension of a circumferential inner surface defect, and determining a defect depth a and a defect length l; calculating primary membrane stress sigma m which is vertical to a defect surface at the position of the circumferential inner surface defect in absence of the defect under an assessment working condition; calculating the relation of primary bending stress sigma b which is vertical to the defect surface at the position of the circumferential inner surface defect in absence of the defect and an extra bending moment M which is borne by the safety end through three-dimensional finite element analysis; determining the primary bending stress sigma b which corresponds to a resultant bending moment Mt according to the resultant bending moment Mt under the assessment working condition; calculating the rheological stress sigma f of a material in the welding joint area, and calculating a stress ratio SR which is equal to (sigma m+ sigma b) / sigma f; calculating the relation of the stress ratio, a nominal defect length and a nominal permitted defect depth according to a three-dimensional finite element model; and judging whether the defect depth a is less than or equal to the permitted defect depth a or not.
Owner:EAST CHINA UNIV OF SCI & TECH
PVD preparation process for adjusting TiW membrane stress
ActiveCN104746006AStress controllableMeet stress demandsVacuum evaporation coatingSputtering coatingMembrane stressEngineering
The invention provides a PVD preparation process for adjusting TiW membrane stress. The preparation process comprises the following steps: placing a to-be-processed substrate on a base; inletting an argon gas in the first flow; depositing; applying the first power on a direct current power source and maintaining for a first preset time; cooling; stopping applying the first power on the direct current power source and maintaining for a second preset time; and repeating the depositing and cooling until the required film membrane thickness is achieved. Through the PVD preparation process for regulating TiW membrane stress, by setting the cooling step to regulate the stress of the TiW membrane in the preparation process, the stress of the film is adjusted by adjusting the first preset time for deposition and the second preset time for cooling; the stress of the prepared TiW membrane is controllable, the deposition rate and the density of the TiW membrane are maintained essentially constant, the stress requirement of the semiconductor integrated circuit device can be satisfied, the stability and the service life of the semiconductor integrated circuit are improved.
Owner:BEIJING NAURA MICROELECTRONICS EQUIP CO LTD
Membrane stress testing device and method
InactiveCN104568236ASimple structureHigh displacement magnificationForce measurement by permanent gauge deformationCantilevered beamMembrane stress
The invention relates to an MEMS (micro electro mechanical systems) testing technique, in particular to a membrane stress testing device and method. The device comprises at least two fixing terminals in symmetrical design; each fixing terminal is connected with a fixing beam; the other free end of each fixing beam is connected with one end of a cantilever beam through a fixing beam connecting neck at an included angle; a pointer beam is clamped between the other ends of the cantilever beams through two cantilever beam connecting necks; the pointer beam is close to one cantilever beam and far away from the other cantilever beam; the pointer beam points to a scale; the scale comprises a sacrificial layer formed on a substrate and a membrane to be tested, formed on the sacrificial layer and is provided with a comb-tooth structure used with the pointer beam to read a swing value of the pointer beam. The method is applied to the device; small displacement of the fixing beams is secondarily amplified into swing displacement of the pointer beam through the cantilever beams, a rotating arm and the pointer beam, the swing displacement is acquired directly through the scale, and residual stress of the membrane is solved through a linear-elastic theory equation.
Owner:巫立斌
Real-time measuring device for high precision thin-film stress and measuring method
InactiveCN1971248ASimple structureEasy to buildForce measurement by measuring optical property variationMaterial analysis by optical meansMeasurement deviceMembrane stress
The invention supplies a real-time measurement device and method of high-accuracy membrane stress that comprises the He-Ne laser, reflector, light-sensitive detector, A / D data acquisition card and computer. The whole device can be mounted on any coater conveniently, the He-Ne laser, reflector, light-sensitive detector, A / D data acquisition card and computer are out of the coater, and the laser beam enters the coated room via observation window of the coater and irradiated to substrate by adjusting of the reflector, the reflected beam is adjusted by the reflector and out from the observation window, the light-sensitive detector detects the deflection shift of the reflected beam, the data acquisition card collects the analog signal of the light-sensitive detector and transfers the analog signal to digital signal which is sent to computer. The stress variation of film can be real-time monitored by the process of signal. The invention characterized in that the structure is simple, the accuracy is high, data processing is easy, and the compatibility with coater is strong.
Owner:SHANGHAI INST OF OPTICS & FINE MECHANICS CHINESE ACAD OF SCI
Light beam array membrane stress measuring device
InactiveCN102636302AImprove stress measurement accuracyEliminate stress measurement errorsForce measurement by measuring optical property variationStress distributionStress measurement
The invention discloses a light beam array membrane stress measuring device, which comprises a multi-light-beam pattern generator and a light bema position detector. The multi-light-beam pattern generator comprises a laser device, an inverted telescopic collimation optical system, a beam splitter and a collimation lens. The beam splitter can generate a light beam array, and the light beam array consists of a plurality of mutually parallel single parallel light beams which are arrayed. Accordingly, the light beam array membrane stress measuring device can measure stress distribution of a micro-domain membrane, eliminates stress measurement errors caused by environmental vibration interferences, and improves membrane stress measurement precision.
Owner:SUZHOU INST OF NANO TECH & NANO BIONICS CHINESE ACEDEMY OF SCI
Cantilever beam type membrane stress power generation structure
InactiveCN106966356ALower natural frequencyLarge deformationDecorative surface effectsChemical vapor deposition coatingInsulation layerMembrane stress
The invention belongs to the field of Micro-Electro-Mechanical System (MEMS), more specifically, the invention relates to a cantilever beam type membrane stress power generation structure, which comprises a frame type substrate, wherein a silicon cantilever beam suspended in the frame type substrate is positioned on a beam facing an opening of the frame type substrate, the free end of the silicon cantilever beam is fixedly provided with a mass block, a silicon dioxide insulation layer is also positioned above the beam facing the opening of the frame type substrate, a bottom electrode layer is positioned on the silicon dioxide insulation layer, a strip bottom electrode layer positioned above the silicon cantilever beam extends on the bottom electrode layer in the direction towards the opening of the frame type substrate, a PZT piezoelectric layer is positioned on the mass block, a strip PZT piezoelectric layer positioned above the strip bottom electrode layer extends on the PZT piezoelectric layer in the direction towards the silicon dioxide insulation layer, and a top electrode layer is positioned above the strip PZT piezoelectric layer. When the system is in a vibration environment, the vibration in the external environment can be transferred to the system, vibration and bending deformation of the silicon cantilever beam are caused, mechanical energy is stored in the silicon cantilever beam, thereby, the piezoelectric layer is stretched and contracted and an electrical signal is generated, and the conversion of mechanical energy to electrical energy is realized.
Owner:ZHONGBEI UNIV
Measuring method and measuring device for membrane stress
ActiveCN104568247ASimple structureLow costForce measurement by measuring optical property variationLaser transmitterMembrane stress
The invention relates to a measuring method and measuring device for membrane stress and belongs to the technical field of measurement. In the measuring method and the measuring device for membrane stress, at least two laser beams are projected to a membrane to be measured by a laser transmitter, so that after a detector receives reflection light reflected by the membrane, the membrane stress can be corrected according to difference values delta alpha of reflection angles of multiple reflection light, so that an error in measurement can be lowered greatly; besides, the measuring device also includes a revolving mirror group which can project over-ranging reflection light to a laser receiving unit, thereby enlarging the measuring range, and further improving the precision of a measuring result; the measuring device for the membrane stress provided by the invention is simple in structure, low in cost,simple and convenient in application manner of the measuring method and wider in application range.
Owner:EVERDISPLAY OPTRONICS (SHANGHAI) CO LTD
Low temperature annealing process for relieving MOCVD TiN membrane stress and resistance
The name in religion belongs to the integrated circuit craft manufacture area of technology, is concrete is a kind of MOCVD membrane withdraws from a mess the craft, eliminates the TiN membrane the stress, reduces the thin film resistance. Is opposite to the PCD technology, MOCVD TiN has the fine stair cover, but also has the obvious shortcoming, mainly is in the thin film includes higher C, impurity and so on O, may achieve 20%, the thin film quality of material is loose, when exposes when the air, as a result of the oxygen, the carbon dioxide and so on was mad the experience rapidly proliferates into the membrane the surface layer, creates the thin film resistance between to increase as necessary. The invention through to MOCVD TiN membrane after annealing processing, causes the thin film to have the heavy crystallization and the hot backflow, changes compactly, smoothness improvement; And gas and so on dependence nitrogen / hydrogen removes in TiN membrane C, impurity and so on O, thus gets up eliminates the TiN membrane stress, reduces the thin film resistance, causes the membrane nature to be stabler.
Owner:SHANGHAI HUA HONG GROUP +2
Vent assisted single ply roof system
ActiveUS9422725B1Reduce harmLighting and heating apparatusRoof covering using flexible materialsMembrane stressAdhesive
A vent assisted single-ply roof system including an augmented design that incorporates mechanical fasteners, insulation bonding adhesives and membrane bonding adhesives in the turbulent wind vortex areas along the perimeter of the deck as determined by ASCE 7 calculations. Coupled with roof vents for equalizing the pressure under a loose laid membrane in the field-of-roof area outside the turbulent wind vortex areas to reduce membrane stress and resist wind uplift pressures during high wind events.
Owner:VADA LLC
Chip having high sensitivity for silicon micro-capacitor microphone and preparation method thereof
This invention refers to a chip used in silicon micro capacitance microphone and preparation method thereof, said chip contains a N negative type silicon substrate, P positive type doped layer formed by boron diffusion on positive surface of silicon substrate, silicon dioxide deposited on it, etching isolation layer adhered with a vibration membrane layer deposited with metal aluminium membrane layer then photo etching and corroding to form round aluminium membrane and rectangle aluminium electrode, a silicon nitride protective film on back surface of silicon substrate, corroding a trapeze notch with depth to P positive doped layer and corroding acoustics hole in vertical direction to form perforation back board which and silicon nitride vibration membrane form air gap. Said invention reduces vibration membrane stress and greatly raises the sensitivity of vibration membrane and avoids aging crack.
Owner:INST OF ACOUSTICS CHINESE ACAD OF SCI
Semiconductor device
ActiveUS20150228655A1Solid-state devicesSemiconductor/solid-state device manufacturingPower semiconductor deviceMembrane stress
Provided is a semiconductor resistor circuit with high accuracy. An insulating film is formed to cover a plurality of resistor groups having upper portions covered with a plurality of metal wirings. The insulating film has a membrane stress that is higher than that of the metal wirings, and is formed between the metal wirings and the resistor groups.
Owner:ABLIC INC
Testing system and method for identifying limp of dairy cattle early
InactiveCN103960157AAppropriate installation heightAvoid crossoverOther apparatusData informationMembrane stress
The invention relates to a testing system for identifying limp of dairy cattle early. The testing system comprises a 3D membrane stress plate and a ramp which are arranged in sequence, wherein guide bars are respectively arranged on two sides of the 3D membrane stress plate and the ramp, and photoelectric sensors are arranged on the guide bars. The testing system further comprises a counter connected with the photoelectric sensors. An anti-slip antiseptic rubber blanket is laid on the 3D membrane stress plate, and the counter and the 3D membrane stress plate are connected with a data acquisition and record device. The testing system has the advantages that the 3D membrane stress plate serves as a test sensor to pick up acting force of dairy cattle to the ground, the dairy cattle can pass through a testing channel without interference during testing, and the testing system is simple, convenient and feasible. A test method has no special requirements for environments and light. A large amount of data information can be acquired by the membrane stress plate, real conditions of the acting force of dairy cattle to the ground during walking can be reflected accurately, and therefore, operators can identify whether dairy cattle limp or which legs of dairy cattle limp early through the data analysis result.
Owner:INNER MONGOLIA AGRICULTURAL UNIVERSITY
Thin film transistor, fabrication method thereof, display substrate and display device
ActiveCN107464849AImprove performanceIncrease opening ratioTransistorSemiconductor/solid-state device manufacturingCapacitanceInsulation layer
The invention discloses a thin film transistor, a fabrication method thereof, a display substrate and a display device. The thin film transistor comprises a substrate, an active layer, a grid, a grid insulation layer, an interlayer insulation layer, a source and a drain, wherein the active layer is arranged on the substrate, the grid insulation layer is arranged between the grid and the active layer, the projection of the grid on the active layer is overlapped with at least one part of a channel region of the active layer, the interlayer insulation layer is arranged at one side, far away from the substrate, of the active layer and comprises an organic transparent material, and the source and the drain are arranged at one side, far away the grid insulation layer, of the interlayer insulation layer and are connected with the active layer through a via hole. The thin film transistor has at least one of the following advantages that the membrane stress of the interlayer insulation layer can be reduced, a glass warping phenomenon is improved, the capacitance coupling effect between the source-drain and the grid is reduced, and the light transmittance is effectively improved.
Owner:BOE TECH GRP CO LTD
Method for preparing target for copper conductor of thin film transistor (TFT)-liquid crystal display (LCD) array substrate, and target
InactiveCN102703869ALow resistivityReduce surface roughnessVacuum evaporation coatingSputtering coatingCopper conductorLiquid-crystal display
The invention relates to a method for preparing a target for a copper conductor of a thin film transistor (TFT)-liquid crystal display (LCD) array substrate, and the target. The method for preparing the target for the copper conductor for the TFT-LCD array substrate comprises the following steps of: providing copper powder, and a discharge plasma activated sintering device; and 2, adding the copper powder into the discharge plasma activated sintering device and sintering to prepare the target for the copper conductor of the TFT-LCD array substrate. According to the method for preparing the target for the copper conductor of the TFT-LCD array substrate, the copper powder is sintered into the target by the discharge plasma activated sintering device; the method is simple in process and high efficiency; and the crystal orientation of the target can be effectively controlled, and the performance of the target is improved, so that the copper conductor which is prepared by using the target is low in electrical resistivity, membrane stress and surface roughness.
Owner:SHENZHEN CHINA STAR OPTOELECTRONICS TECH CO LTD
Landfill impermeable membrane stress relief structure using rubber airbags
PendingCN108951713AAvoid instabilityReduce the risk of contaminationProtective foundationMembrane stressEngineering
The invention relates to a landfill impermeable membrane stress relief structure using rubber airbags, and belongs to the technical field of environmental protection. A liner is arranged on a slope ofa refuse landfill; the liner specifically consists of an impermeable membrane in middle, and geofabrics on two sides of the impermeable membrane; anchoring areas for fixing the liner are arranged atthe top end of the slope and the upper part of each slope section; the anchoring areas comprise anchoring grooves and groove outer side platforms; the liner is overturned in the anchoring grooves; concrete anchoring blocks are cast above the liner in the anchoring grooves; volume adjusting objects are arranged between the groove outer side platforms and the liner or between the concrete anchoringblocks and the liner; and the volume adjusting objects are carbon dioxide cylindrical airbags.
Owner:SHENYANG POLYTECHNIC UNIV
System for estimating membrane stress on arbitrary-shaped curvilinear surface based on current configuration data
ActiveUS20130041639A1Evaluation of blood vesselsComputerised tomographsStress distributionMembrane stress
A stress estimating system includes a polygon data input unit of polygon data modeling a vascular wall, an interactive analysis condition setting unit for setting the tensile force acting on the vascular wall boundary, blood pressure and constraint estimated as proper on the boundary, a stress analysis unit for obtaining two-dimensional stress by solving a mechanical equilibrium equation with respect to the membrane stress on a curvilinear surface of the vascular wall under the condition given by the polygon data input unit and the interactive analysis condition setting unit, and an interactive visualization unit for displaying a distribution of a stress component designated by a system user. Without assuming any symmetry for the curvilinear configuration and stress distribution, a complicated stress distribution is estimated only out of the mechanical equilibrium equation with respect to membrane stress.
Owner:WASHIO TAKUMI +4
Sintered body and amorphous film
ActiveCN104487402AReduce crackingPrevent peelingVacuum evaporation coatingSputtering coatingIndiumMembrane stress
This sintered body, which contains zinc (Zn), tin (Sn) and / or indium (In), magnesium (Mg), and oxygen (O), is an oxide sintered body characterized by having a total content of Sn and / or In in terms of SnO2 and / or In2O3 of 10-90 mol%, having an Mg content in terms of MgF2 of 15-50 mol% when the ratio of the number of Sn and / or In atoms to the number of Zn atoms is no greater than 1, and having an Mg content in terms of MgF2 of 1-40 mol% when the ratio of the number of Sn and / or In atoms to the number of Zn atoms is at least 1. The sintered body can form an amorphous film by means of a sputtering method or an ion plating method, and so has a superior effect in being able to suppress the occurrence of cracking or peeling of the film resulting from membrane stress. The thin film of the present invention is particularly useful as an optical thin film forming a protective layer for an optical information recording medium, an organic EL television thin film, and a transparent electrode thin film.
Owner:JX NIPPON MINING & METALS CO LTD
A Method for Determining Membrane Stress Values Under Concentrated Force on Peripherally Clamped Circular Membranes
Owner:YANGZHOU PULAOSHI TECH DEV CO LTD
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