Membrane stress control method

A control method and film stress technology, applied in the field of spacecraft thermal control, can solve problems such as failure, wrinkle deformation, thermal control performance degradation of thermal control devices, etc., and achieve the effect of strong adaptability, wide applicability, and broad application prospects

Inactive Publication Date: 2009-06-17
NO 510 INST THE FIFTH RES INST OFCHINA AEROSPAE SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] The purpose of the present invention is to provide a film stress control method, which is used to solve the problem that the thermal control performance of the corresponding thermal control device decreases or even fails due to wrinkling and deformation of the aluminum / polyimide composite film for the thermal control of the spacecraft.

Method used

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  • Membrane stress control method
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Embodiment 1

[0020] 1. Using magnetron sputtering film deposition technology to deposit a layer of tin with a thickness of about 50nm on a polyimide film with a thickness of 13um, the film deposition conditions are: the substrate temperature is room temperature, the purity of the aluminum target and the tin target Both are 99.99%, and the background vacuum is better than 3.5×10 -3 Pa, argon partial pressure is 0.4 Pa, sputtering voltage is 300V, sputtering current is 0.2A, sputtering power is 80W, and target / base spacing is 70mm.

[0021] 2. Deposit a layer of aluminum film with a thickness of 150nm on the tin layer completed in step 1. The film deposition conditions are: the substrate temperature is room temperature, the purity of the aluminum target and the tin target are both 99.99%, and the background vacuum is better than 3.0×10 -3 Pa, argon partial pressure is 0.5Pa, sputtering voltage is 400V, sputtering current is 0.4A, sputtering power is 120W, aluminum film deposition rate is 35.7nm / ...

Embodiment 2

[0024] 1. Using magnetron sputtering film deposition technology to deposit a layer of tin with a thickness of about 80 nm on a polyimide film with a thickness of 25um. The film deposition conditions are: the substrate temperature is room temperature, the purity of the aluminum target and the tin target are both 99.99%, and the background vacuum is better than 3.5×10 -3 Pa, argon partial pressure is 0.3Pa, sputtering voltage is 3500V, sputtering current is 0.25A, sputtering power is 150W, target / base spacing is 90mm;

[0025] 2. Deposit another layer of 200nm thick aluminum film on the tin layer completed in step 1. The film deposition conditions are: the substrate temperature is room temperature, the purity of the aluminum target and the tin target are both 99.99%, and the background vacuum is better than 3.5×10 -3 Pa, argon partial pressure is 0.4Pa, sputtering voltage is 400V, sputtering current is 0.2A, sputtering power is 80W, aluminum film deposition rate is 35.7nm / min, targe...

Embodiment 3

[0028] 1. Using magnetron sputtering film deposition technology to deposit a layer of tin with a thickness of about 100 nm on a polyimide film with a thickness of 25um. The film deposition conditions are: the substrate temperature is room temperature, the purity of the aluminum target and the tin target are both 99.99%, and the background vacuum is better than 3.5×10 -3 Pa, argon partial pressure is 0.5Pa, sputtering voltage is 450V, sputtering current is 0.6A, sputtering power is 180W, target / base spacing is 85mm;

[0029] 2. Deposit another layer of 200nm thick aluminum film on the tin layer completed in step 1. The film deposition conditions are: the substrate temperature is room temperature, the purity of the aluminum target and the tin target are both 99.99%, and the background vacuum is better than 3.5×10 -3 Pa, argon partial pressure is 0.3Pa, sputtering voltage is 400V, sputtering current is 0.2A, sputtering power is 80W, target / base spacing is 70mm;

[0030] 3. Place the ...

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Abstract

The invention relates to a method for controlling stress of films, belonging to the thermal control field of spacecrafts. The method employs a magnetic-control sputtering film deposition technique to deposit a tin film and an aluminium film on a polymer film, subsequently pumps vacuum and heats so that Sn-Al alloy is formed between the tin film and the aluminium film and expansion distortion of the crystal lattice is generated to introduce reverse stress to counterbalance the existing intrinsic compressive stress, thus presenting a smooth film in microscopic view. The method can be applied to the stress control technique of micro-mechanical shutter films and flexible thermal-control films used for satellite thermal-control, has strong adaptability and wide applicability, does not affect quality of films, and has unique advantages on the stress control and wide application prospect.

Description

Technical field [0001] The invention relates to a thin film stress control method, which belongs to the field of spacecraft thermal control. Background technique [0002] Aluminum / polyimide composite film has a wide range of applications in the field of spacecraft thermal control, such as flexible thermal control film and micro thermal control shutters, etc. It can effectively reflect most of the direct sunlight, thereby preventing the spacecraft from rising and falling due to temperature It will cause the equipment to malfunction quickly, and it can also effectively protect the spacecraft from the interference of charged particles from the outer space. The stress in the aluminum / polyimide composite film has a serious impact on the micro thermal control blinds. In terms of mechanical properties, the compressive stress of the film reduces the elastic coefficient of the micro mirror support beam and reduces the vibration frequency of the structure. Affect its corresponding speed; i...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/35C23C14/14C23C14/58C23C14/54
Inventor 陈学康曹生珠蒋钊吴敢杨建平王瑞尚凯文
Owner NO 510 INST THE FIFTH RES INST OFCHINA AEROSPAE SCI & TECH
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