Thin film transistor, fabrication method thereof, display substrate and display device

Abstract

The invention discloses a thin film transistor, a fabrication method thereof, a display substrate and a display device. The thin film transistor comprises a substrate, an active layer, a grid, a grid insulation layer, an interlayer insulation layer, a source and a drain, wherein the active layer is arranged on the substrate, the grid insulation layer is arranged between the grid and the active layer, the projection of the grid on the active layer is overlapped with at least one part of a channel region of the active layer, the interlayer insulation layer is arranged at one side, far away from the substrate, of the active layer and comprises an organic transparent material, and the source and the drain are arranged at one side, far away the grid insulation layer, of the interlayer insulation layer and are connected with the active layer through a via hole. The thin film transistor has at least one of the following advantages that the membrane stress of the interlayer insulation layer can be reduced, a glass warping phenomenon is improved, the capacitance coupling effect between the source-drain and the grid is reduced, and the light transmittance is effectively improved.

Description

technical field [0001] The present invention relates to the field of display technology, and in particular, to a thin film transistor and a preparation method, a display substrate and a display device. Background technique [0002] At present, liquid crystal displays (LCDs) are widely used in people's daily work and life, such as mobile phones, cameras, computers, televisions, and the like. With the improvement of people's living standards, people's requirements for display quality are also getting higher and higher, which objectively promotes the development of display technology, and new display technologies are also emerging, such as low-temperature polysilicon and organic displays. With the popularization of liquid crystal display devices, users also put forward new requirements for the performance of liquid crystal display devices. [0003] However, the current thin film transistors and their preparation methods, display substrates, and display devices still need to be...

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Problems solved by technology

[0005] Most of the current thin film transistors have problems such as large film quality stress, large capacitive coupling effect, complicated production process and low light transmittance.

In addition, the composite layer structure composed of oxides and nitrides will also cause stress matching problems, which may easily cause the peeling of the upper and lower layers or the warping of the substrate itself due to the stress relationship when the glass is heated at high temperature, thereby affecting the device itself. performance

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