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PVD preparation process for adjusting TiW membrane stress

A technology of preparation process and film stress, which is applied in the direction of metal material coating process, ion implantation plating, coating, etc., can solve problems such as changes in the density of TiW films, improve stability and service life, and meet stress requirements Effect

Active Publication Date: 2015-07-01
BEIJING NAURA MICROELECTRONICS EQUIP CO LTD
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  • Abstract
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  • Claims
  • Application Information

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Problems solved by technology

Generally, the stress of the TiW film can be adjusted from tensile stress to compressive stress by adjusting the deposition pressure, but adjusting the deposition pressure will cause a large change in the density and other properties of the TiW film.

Method used

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  • PVD preparation process for adjusting TiW membrane stress
  • PVD preparation process for adjusting TiW membrane stress
  • PVD preparation process for adjusting TiW membrane stress

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[0033] The key process parameters in the preparation process of the present invention are deposition time and cooling time, namely the first preset time and the second preset time. Generally, the first preset time is 5s to 30s, and the second preset time is 60s to 360s. By setting different deposition time and cooling time, the stress of TiW film can be adjusted to meet different stress requirements.

[0034] It should be noted that before applying power to the DC power supply, a step of igniting the DC power supply is also included. Generally, the ignition time of the DC power supply is 2s.

[0035] Preferably, as an implementable manner, the following process parameters such as the flow rate of argon gas, the deposition pressure and the power of the DC power supply are kept constant throughout the entire preparation process. This can ensure that the deposition rate and density of the prepared TiW thin film remain basically unchanged, thereby improving the stability and ser...

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Abstract

The invention provides a PVD preparation process for adjusting TiW membrane stress. The preparation process comprises the following steps: placing a to-be-processed substrate on a base; inletting an argon gas in the first flow; depositing; applying the first power on a direct current power source and maintaining for a first preset time; cooling; stopping applying the first power on the direct current power source and maintaining for a second preset time; and repeating the depositing and cooling until the required film membrane thickness is achieved. Through the PVD preparation process for regulating TiW membrane stress, by setting the cooling step to regulate the stress of the TiW membrane in the preparation process, the stress of the film is adjusted by adjusting the first preset time for deposition and the second preset time for cooling; the stress of the prepared TiW membrane is controllable, the deposition rate and the density of the TiW membrane are maintained essentially constant, the stress requirement of the semiconductor integrated circuit device can be satisfied, the stability and the service life of the semiconductor integrated circuit are improved.

Description

technical field [0001] The invention relates to the field of semiconductors, in particular to a PVD preparation process for adjusting the stress of a TiW thin film. Background technique [0002] TiW (titanium tungsten, tungsten titanium) is an important alloy material in the semiconductor manufacturing industry, mainly used in semiconductor IC (integrated circuit, integrated circuit) devices, such as TiW and Pt (platinum, platinum) metallization accumulation layer is suitable for Integrated MEMS (microelectromechanical system, microelectromechanical system) devices, TiW silicide is especially suitable for heating elements in electrothermal converters. Optical MEMS and biological MEMS require the metal to be inactive, corrosion-resistant, and require the film stress to be as small as possible. Compared with Cu and Al electrodes, TiW metal satisfies this requirement well. [0003] The stress performance of TiW thin films has an important influence on the stability and service...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/18C23C14/35
Inventor 田立飞夏威
Owner BEIJING NAURA MICROELECTRONICS EQUIP CO LTD
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