32 results about "Gallium doping" patented technology

The invention relates to a high-efficiency planar perovskite solar cell, the high-efficiency planar perovskite solar cell includes a transparent conductive substrate, an electron conduction layer, a perovskite layer, a hole conduction layer and a metal electrode; the electron conduction The layer is a dense layer of gallium-doped titanium dioxide prepared by a low-temperature process solution method. The present invention also relates to the preparation method of the above-mentioned high-efficiency planar perovskite solar cell, by adding gallium nitrate and low-temperature heat treatment in the process of hydrolyzing titanium tetrachloride to prepare the titanium dioxide dense layer to obtain the gallium-doped titanium dioxide dense layer, and using the gallium Dense layers of doped titania assemble perovskite solar cells. The planar perovskite solar cell of the present invention adopts the gallium-doped titanium dioxide dense layer prepared by the low-temperature process solution method as the electron conduction layer, and promotes the collection and conduction of the photogenerated electrons by the titanium dioxide electron conduction layer through gallium doping, which has The advantages of high photoelectric conversion efficiency, high cell efficiency, and easy preparation.

The invention discloses a manufacturing process of solar P-type polycrystalline silicon wafers. The production process steps include: (1) preparation of raw materials; (2) preparation of P-type silicon ingots; (3) cutting and prescribing of silicon ingots; (4) silicon ingots Cutting and cleaning of slices; the raw materials used include: primary silicon material with a purity of 6N, recycled silicon material, and dopant gallium; the recycled silicon material includes recycled silicon plates, recycled silicon blocks, recycled silicon wafers, and recycled silicon powder. The recycled silicon material needs to be purified before use. The edge of the crucible is filled with recycled silicon material when the ingot is cast, and the center of the crucible is filled with gallium-doped primary silicon material. The doping concentration of gallium in the primary silicon material is from From the bottom of the crucible to the top of the crucible gradually decreases, the concentration of gallium at the top is zero, and then the crucible filled with silicon material is placed in a microwave sintering furnace. P-type silicon ingots. The invention fully utilizes the recycled silicon material, and the quality of the prepared silicon chips is stable.

The present invention is a method for manufacturing an FZ silicon single crystal for a solar cell, including the steps of: pulling a CZ silicon single crystal doped with gallium by a Czochralski method; and float-zone processing a raw material rod, with the raw material rod being the CZ silicon single crystal, at 1.6 atmospheric pressure or more to manufacture the FZ silicon single crystal. As a result, it is possible to provide a method for manufacturing an FZ silicon single crystal for a solar cell that can decrease the amount of gallium dopant evaporated during the float-zone processing, thereby preventing the silicon single crystal from increasing the resistance while decreasing oxygen, which is inevitably introduced into a CZ crystal, and preventing formation of a B-O pair, which causes a problem to the characteristics of a solar cell.