Wave length-adjustable light-emitting diode based on gallium-doped zinc oxide nanowire array and manufacturing method thereof

Abstract

The invention discloses a wavelength-adjustable light-emitting diode based on a gallium-doped zinc oxide nanowire array and a manufacturing method thereof. The wavelength-adjustable light-emitting diode based on the gallium-doped zinc oxide nanowire array comprises a p-type conducting substrate, a gallium-doped zinc oxide nanowire array, a bottom electrode and a top electrode, wherein the gallium-doped zinc oxide nanowire array and the bottom electrode are positioned on the p-type conducting substrate; the top electrode is positioned on the gallium-doped zinc oxide nanowire array. The manufacturing method of the wavelength-adjustable light-emitting diode based on the gallium-doped zinc oxide nanowire array comprises the following steps: providing a p-type conducting substrate; growing a gallium-doped zinc oxide nanowire array on the p-type conducting substrate by controlling the gallium-doping amount of the gallium-doped zinc oxide nanowire array; rotationally coating the grown gallium-doped zinc oxide nanowire array with a blocking layer; etching and removing the blocking layer coated on the top of the gallium-doped zinc oxide nanowire array; depositing the top electrode on the top of the gallium-doped zinc oxide nanowire array; removing a part of the gallium-doped zinc oxide nanowire array to expose the p-type conducting substrate, and manufacturing the bottom electrode on the exposed p-type conducting substrate.

Description

technical field [0001] The invention relates to the field of semiconductor light-emitting devices, in particular to a wavelength-adjustable light-emitting diode based on a gallium-doped zinc oxide nanowire array and a preparation method thereof. Background technique [0002] Semiconductor light-emitting diodes are a new generation of light sources with high energy efficiency, long life and small size. They are widely used in lighting, information communication, display technology and medical technology. The luminous wavelength is an important performance parameter of a semiconductor light-emitting diode, which is determined by the energy band width of the luminescent material. Wavelength-tunable light-emitting diodes have important application prospects in white light lighting and optical display technology, and have become a research hotspot of semiconductor light-emitting diodes. [0003] In the visible light and ultraviolet light regions, gallium nitride materials are al...

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Problems solved by technology

[0004] The wavelength tunable light-emitting diodes reported publicly at present all realize the energy band shift of gallium nitride by doping gallium nitride with indium, and the device structure is a planar thin film structure, and a large number of lattice defects are prone to appear during the doping process. , and the doping concentration is difficult to increase, resulting in a decrease in the luminescent performance of the device

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