30results about How to "Sufficient uniformity" patented technology

The invention discloses cooling equipment for a large bar material, which is used for cooling a bar material (11) after rolling. The cooling equipment is equipped with a short passing water cooler; the bar material (11) penetrates through the short passing water cooler; a water spraying box (2) is arranged on the short passing water cooler at the entering end part of the bar material (11); an annular nozzle (3) is arranged on the spraying box (2). Through adopting the technical scheme, the fast cooling capacity is improved, sufficient cooling is achieved, stability and uniformity of cooling are achieved, and the manufacture requirement of passing water cooling manufacture technology for rolling the large bar material (Phi 60-Phi 150 mm) is satisfied; the products can be manufactured are various and have a wide specification range; the position change is convenient and fast; the bar material product subjected to passing water cooling has increased performance with obvious economical benefits; the cooling equipment is safe and reliable in use, saves energy, protects the environment and is easy for popularization.

A reaction chamber air inlet device for metal organic chemical vapor deposition (MOCVD) equipment includes a cylinder body, a water cooling air uniform-distributing plate manufactured inside the cylinder body, an upper cover plate fixed on the cylinder body and forming an air inlet chamber with the water cooling air uniform-distributing plate, and an air separating device fixed on the upper cover plate and dividing the air inlet chamber into at least two air inlet chambers or communicating the two air inlet chambers. The reaction chamber air inlet device realizes diversity and flexibility of air inlet manner in the MOCVD reaction chamber, improves mixing uniformity of components and avoids serious pre-reaction.

The invention discloses a one-dimensional electronic gas GaN-based HEMT (High Electron Mobility Transistor) device adopting selective area epitaxy and a preparation method thereof, and mainly solves the problems of poor high temperature and high voltage characteristics, frequency characteristic and power characteristic of an existing one-dimensional electronic gas device. The device comprises a substrate, a buffering layer, a passivation layer and a protection layer from bottom to top; the buffering layer adopts GaN; the buffering layer is provided with barrier layer strips and masking layer strips, which are periodically arranged at intervals; both ends of each barrier layer strip respectively are a source electrode and a drain electrode; the passivation layer is positioned on the barrier layer strips and the masking layer strips; the passivation layer is provided with a grid slot; a grid electrode is arranged in the grid slot; and the barrier layer strips adopt AlGaN and the width of each barrier layer strip is in nanometer dimension so as to form one-dimensional electronic gas. Compared with Si-based and GaAs-based one-dimensional electronic gas devices, due to the adoption of a wide bandgap semiconductor GaN with the outstanding material characteristics, the one-dimensional electronic gas GaN-based HEMT device adopting selective area epitaxy has excellent high temperature and high voltage characteristics, frequency characteristic and power characteristic, and the ultrahigh speed and low power consumption one-dimensional electronic gas device can be made.

The invention provides an ultrasonic diagnosis system, a measurement point is set at frame data consisting of an envelope signal obtained by orthogonal detection of an RF signal output from an ultrasonic probe before and after compression of an examinee. The measurement point is moved in the ultrasonic beam direction -first dimensional direction, second dimensional direction or third dimensional direction with respect to the frame data so as to obtain a position where the envelope signal correlation coefficient before and after compression belonging to a correlation window surrounding the measurement point becomes maximum. According to this, the displacement of the measurement point accompanying the compression is obtained and the phase difference between the RF signals before and after the compression is obtained, so as to accurately obtain a displacement of the measurement point accompanying the compression by displacement measurement means. Thus, it is possible to estimate the displacement distribution without being restricted by the displacement amount, reduce the calculation time, and cope with a horizontal direction displacement.

The invention discloses a plasma display panel (PDP) terminal hot-pressing head structure, which relates to the PDP terminal hot-pressing head structure realizing hot-pressing pressure and temperature control by distributing a plurality of pressing heads. The PDP terminal hot-pressing head structure provided by the invention aims to overcome the shortcomings of the prior art, and can effectively solve the problem of pressing head pressure and heating distribution and improve pressing head regulation processibility and pressing head maintenance operability. To fulfill the aims, the technical scheme adopted by the invention is that: the PDP terminal hot-pressing head structure comprises a base and the pressing heads; a bottom plate is detachably connected to the base by a connecting device;the PDP terminal hot-pressing head structure further comprises the plurality of pressing heads; the rear ends of each pressing head are connected with a pressure device; and the pressure devices control the actions of the pressing heads, can output constant pressure according to a set value, and are fixed on the bottom plate. The PDP terminal hot-pressing head structure is applied to tape carrierpackage (TCP) hot-pressing.

A method for manufacturing a capacitive storage element having a layer system on one side of a porous substrate, which is designed as a conductive substrate or has a conductive surface layer at least on the one side, the layer system having a layer sequence of a dielectric titanate layer and an electrically conductive layer. It is provided that to form a closed titanate layer having an adjustable minimum layer thickness, an external electrical field is applied in the direction of the layer sequence, and when the field is applied, a fluid containing titanate particles is applied to the substrate. A corresponding capacitive storage element and the use of a capacitive storage element as a storage element of an electrical energy storage unit for supplying energy to an electric drive or hybrid drive of a motor vehicle are also described.