Plasma intensified chemical vapour deposition device

Abstract

There is provided a plasma-enhanced chemical vapor deposition apparatus including a reaction chamber into which a process gas is introduced and from which an exhausted gas is discharged, a susceptor having a first region on which a semiconductor substrate is to be placed and a second region other than the first region, and an electrode located in facing relation with the susceptor and cooperating with the susceptor to generate plasma therebetween for forming a thin film on the semiconductor substrate placed on the first region of the susceptor, characterized by a ceramics insulator located between the second region of the susceptor and the plasma.

Description

technical field [0001] The invention relates to a plasma-enhanced chemical vapor deposition device for forming thin films in the process of preparing semiconductor devices, in particular to a plasma-enhanced chemical vapor deposition device capable of uniformly forming metal films with high barrier properties. Background technique [0002] Recently, with the miniaturization and high integration of LSI fabrication, the design rules of semiconductor devices have been raised from half a micron to a quarter micron level. In addition, techniques for forming multilayer wiring structures and planarizing device surfaces use increasingly larger aspect ratios of contact holes connecting upper and lower wiring layers. In order to form a highly reliable multilayer wiring structure including these high-aspect-ratio contact holes, various methods have been employed. For example, one of the methods includes the steps of: forming a titanium nitride layer functioning as a barrier metal, whi...

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Problems solved by technology

That is, different parts of the base have different temperatures, resulting in poor uniformity of the thin metal, resulting in different electrical properties of the film

Moreover, the titanium nitride thin film formed by the above-mentioned chemical vapor deposition apparatus has many crystal grains, resulting in lowered barrier characteristics.

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