The invention relates to an improved falling
crucible method growth method for
compound semiconductor arsenide gallium monocrystal. The growth method comprises the following steps: a multi-position falling
crucible furnace is used for the growth of
compound semiconductor GaAs monocrystal; the furnace is designed with a plurality of positions, and can be used for the growth of a plurality of crystals; a
raw material for high-purity
arsenic-enriched multicrystal GaAs is synthesized first, and generally, the
arsenic-enriched quantity is not more than 1mol percent; the
raw material is fed into a PBN
crucible with the bottom provided with
crystal seed and
seed crystal, and the PBN crucible is placed inside the static stable falling crucible furnace; the falling crucible furnace is designed with three temperature zones, namely a high-temperature zone T1, a gradient zone T2 and a low-temperature zone T3 which respectively plays a role in material
smelting, growth and heat preservation; moreover, the
furnace temperature is controlled to between 1,250 and 1,290 DEG C, and the position of the crucible is adjusted so as to ensure that the top of the
seed crystal is molten; then the temperature is reduced at the speed between 0.2 and 3 millimeters / hour so as to start
crystal growth; and when
crystal growth is finished, in situ annealing of the crystal is carried out through adjusting the position of the crucible and controlling the
furnace temperature. The improved falling crucible growth method has the advantages that the growth method combines the advantages of the prior VB method and VGF method, and adopts a plurality of crucibles so as to increase crystal yield; moreover, an in situ annealing method is adopted to overcome the
disadvantage of
dislocation caused by thermal stress.