Ingot furnace with movable side heater and ingot production process
A production process and heater technology, applied in the direction of crystal growth, single crystal growth, single crystal growth, etc., can solve problems such as ingot quality decline, easy breakage, photoelectric conversion efficiency reduction, etc., to improve ingot quality and production costs The effect of reducing and reducing dislocation defects
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Embodiment 1
[0019] 1. Loading and vacuuming, start heating: put 450Kg of silicon material 8 into the quartz crucible 6, evacuate to 0.5Pa, pass argon gas through the vent 1 as a protective gas, and turn on the top heater 3 and the side heater 4 heating, the side heater 4 is equidistantly installed with 3 heat conduction rods 9 along the surrounding direction, the upper end of the heat conduction rod 9 is fixedly installed with the electrode rod 10 on the outer top of the furnace body 2, and the heat conduction rod 9 drives the side heater 4 on the quartz The crucible 6 reciprocates from the middle to the bottom at a speed of 80mm / min. After 5 hours of movement, the temperature of the silicon material 8 gradually reaches 1550°C.
[0020] 2. Melting stage: keep the pressure inside the furnace body 2 at 40KPa, keep the temperature of the silicon material 8 at 1550° C. and keep it warm for 8 hours until the silicon material 8 is completely melted. During this process, the side heater 4 recipr...
Embodiment 2
[0025] 1. Loading and vacuuming, start heating: put 500Kg of silicon material 8 into the quartz crucible 6, evacuate to 0.7Pa, pass argon gas through the vent 1 as a protective gas, and turn on the top heater 3 and the side heater 4 heating, the side heater 4 is equidistantly installed with 6 heat conduction rods 9 along the surrounding direction, the upper end of the heat conduction rod 9 is fixedly installed with the electrode rod 10 on the outer top of the furnace body 2, and the heat conduction rod 9 drives the side heater 4 on the quartz The crucible 6 reciprocates from the middle to the bottom at a speed of 150mm / min. After 6 hours of movement, the temperature of the silicon material 8 gradually reaches 1555°C.
[0026] 2. Melting stage: keep the pressure inside the furnace body 2 at 50KPa, keep the temperature of the silicon material 8 at 1555° C. and keep it warm for 10 hours until the silicon material 8 is completely melted. During this process, the side heater 4 reci...
Embodiment 3
[0031] 1. Loading and vacuuming, start heating: put 550Kg of silicon material 8 into the quartz crucible 6, evacuate to 1Pa, pass argon gas through the vent 1 as a protective gas, and turn on the top heater 3 and the side heater 4 Heating, the side heater 4 is equidistantly installed with 9 heat conduction rods 9 along the surrounding direction, the upper end of the heat conduction rod 9 is fixedly installed with the electrode rod 10 on the outer top of the furnace body 2, and the heat conduction rod 9 drives the side heater 4 in the quartz crucible The middle part of 6 moves back and forth between the lower part at a speed of 250mm / min. After 8 hours of movement, the temperature of silicon material 8 gradually reaches 1560°C.
[0032] 2. Melting stage: keep the pressure inside the furnace body 2 at 60KPa, keep the temperature of the silicon material 8 at 1560° C. and keep it warm for 12 hours until the silicon material 8 is completely melted. During this process, the side hea...
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