GaN-based light-emitting diode (LED) epitaxy structure containing ternary superlattice and preparation method of GaN-based LED epitaxy structure

Abstract

The invention relates to the technical field of luminescence of semiconductors, in particular to a GaN-based light-emitting diode (LED) epitaxy structure containing a ternary superlattice and a preparation method of the GaN-based LED epitaxy structure. According to the technical scheme, the GaN-based LED epitaxy structure comprises a patterned substrate, a buffer layer, a non-doped intrinsic GaN layer, an N-type GaN layer, a multi-InGaN / GaN quantum well active layer, a ternary superlattice layer and a P-type GaN layer, which are sequentially stacked; and the ternary superlattice layer is formed by growing the ternary superlattice which formed by an InGaN layer, an AlGaN layer and an MgGaN layer after growing a multi-quantum well layer. The GaN-based LED epitaxy structure has the beneficial effects that the dislocation defect of the quantum well layer and subsequent p-type GaN can be effectively reduced; the crystal quality of a GaN epitaxy film is improved; the carrier concentration can be effectively increased; and relatively good electronic blocking and diffusion are provided, so that the internal resistance is reduced, and the internal quantum efficiency is improved.

Description

technical field [0001] The invention relates to the technical field of semiconductor light emitting, in particular to a GaN-based LED epitaxial structure containing a ternary superlattice and a preparation method thereof. Background technique [0002] LED is a kind of solid light-emitting device that can directly convert electric energy into visible light and radiant energy. It has the advantages of long working life, high luminous efficiency, no pollution, light weight, small size, etc. It has developed by leaps and bounds and has been widely used in indoor and outdoor large Screen display, backlight display, lighting, decoration, traffic lights and other fields. The GaN material system is the most mature material for preparing blue, green, purple and ultraviolet LEDs. The research on GaN materials began in the 1930s. In 1991, someone in the industry discovered that the method of using a low-temperature growth GaN buffer layer can also greatly improve the quality of GaN ep...

AI Technical Summary

Problems solved by technology

[0004] Second, GaN is a crystal with high resistance. When the current flows through the LED, due to the large internal resistance, part of the electric energy will be converted into heat energy consumption, which greatly reduces the energy saving and service life of the LED.

[0007] Existing methods can improve crystal quality and reduce resistance to a certain extent, but there is still much room for improvement

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