Semiconductor device, p-type MOS transistor and manufacturing method thereof
A technology of MOS transistors and manufacturing methods, applied in the field of p-type MOS transistors and their manufacturing, and semiconductor devices, can solve the problems of NBTI effect enhancement, avalanche collision, and influence on the characteristics and reliability of semiconductor devices, and achieve the effect of reducing the impact
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[0034] In the present invention, a fluorine ion implantation area is formed on the surface of the semiconductor substrate on the low-doped source / drain area of the p-type MOS transistor area of the high voltage device area, and the fluorine ion in the fluorine ion implantation area and the silicon in the semiconductor substrate form fluorine silicon Since the silicon-fluorine bond is stronger than the silicon-hydrogen bond, it prevents the formation of Si dangling bonds at high temperatures, thereby reducing the impact of the NBTI effect on the MOS transistor.
[0035] In the present invention, a fluorine ion implantation area is formed on the surface of the semiconductor substrate on the low-doped source / drain area of the p-type MOS transistor area of the high voltage device area, and the fluorine ion in the fluorine ion implantation area and the silicon in the semiconductor substrate form fluorine silicon The group is beneficial to reduce the trap charge and dislocation ...
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