355results about How to "Promote passivation" patented technology

Disclosed herein is a minimally invasive, radio-frequency device and a method for local and regional vascular therapy, more particularly for passivation of atherosclerotic, inflammatory, and / or vulnerable plaque in blood vessels. Radio-frequency devices of the type described herein constitute an important, inexpensive, disposable, minimally invasive approach for passivation or removal of plaques in various parts of the human body, and, as such, have cardiological applications, such as the treatment of coronary atherosclerosis, as well as other applications, such as the treatment occluded blood vessels in the legs and extremities.

One exemplary embodiment is a semiconductor structure, that can include a semiconductor substrate of one conductivity type, having a front surface and a back surface, a first semiconductor layer disposed on the front surface of the semiconductor substrate, a second semiconductor layer disposed on a portion of the back surface of the semiconductor substrate, and a third semiconductor layer disposed on another portion of the back surface of the semiconductor substrate. Each of the second and third semiconductor layers may be compositionally graded through its depth, from substantially intrinsic at an interface with the substrate, to substantially conductive at an opposite side, and have a selected conductivity type obtained by the incorporation of one or more selected dopants.

A photovoltaic cell or other optoelectronic device having a wide-bandgap semiconductor used in the window layer. This wider bandgap is achieved by using a semiconductor composition that is not lattice-matched to the cell layer directly beneath it and / or to the growth substrate. The wider bandgap of the window layer increases the transmission of short wavelength light into the emitter and base layers of the photovoltaic cell. This in turn increases the current generation in the photovoltaic cell. Additionally, the wider bandgap of the lattice mismatched window layer inhibits minority carrier injection and recombination in the window layer.

The invention provides a soil heavy metal composite passivating agent, comprising the following raw materials in percentage by mass of: 25% of slaked lime, 10-20% of monopotassium phosphate, 20-45% of plant ash and 20-45% of silkworm excrement. With the adoption of the soil heavy metal composite passivating agent disclosed by the invention, compared with a control group, an effective state lead content of the soil polluted by heavy metal is reduced by 20.23-47.61% within culture time of 30 days, and an effective state cadmium content is reduced by 20.15-50.57%; the passivating effect of the soil heavy metal composite passivating agent on the heavy metal is extremely obvious; and meanwhile, compared with the control group, the content of organic matters is improved by 48.62-64.47%, and the soil fertility is obviously improved. A method disclosed by the invention is applicable to repairing large-area heavy metal polluted soil and comprises the steps of repairing a heavy metal polluted farmland and repairing a heavy metal polluted mine; and the method has the advantages of lower cost, rapidness for repairing, simplicity in operation, feasible method and extremely great popularization value.

A method is disclosed for passivating and contacting a surface of a germanium substrate. A passivation layer of amorphous silicon material is formed on the germanium surface. A contact layer of metal, e.g., aluminum, is then formed on the passivation layer. The structure is heated so that the germanium surface makes contact with the contact layer. The aluminum contact layer can be configured for use as a mirroring surface for the back surface of the device. Thus, a passivated germanium surface is disclosed, as well as a solar cell comprising such a structure.

The disclosed subject matter provides a method and structure for obtaining ultra-low surface recombination velocities from highly efficient surface passivation in crystalline silicon substrate-based solar cells by utilizing a bi-layer passivation scheme which also works as an efficient ARC. The bi-layer passivation consists of a first thin layer of wet chemical oxide or a thin hydrogenated amorphous silicon layer. A second layer of amorphous hydrogenated silicon nitride film is deposited on top of the wet chemical oxide or amorphous silicon film. This deposition is then followed by annealing to further enhance the surface passivation.

Disclosed are methods of growing III-V epitaxial layers on a substrate, a semiconductor structure comprising a substrate, a device comprising such a semiconductor structure, and an electronic circuit. Group III-nitride devices, such as, for example, high-electron-mobility transistors, may include a two-dimensional electron gas (2DEG) between two active layers. For example, the 2DEG may be between a GaN layer and a AlGaN layer. These transistors may work in depletion-mode operation, which means the channel has to be depleted to turn the transistor off. For certain applications, such as, for example, power switching or integrated logic, negative polarity gate supply is undesired. Transistors may then work in enhancement mode (E-mode).

The invention discloses a solar cell with a composite dielectric passivation layer structure and a preparation process thereof. A silicon oxide film, an alumina film and a silicon nitride or silicon oxynitride film are deposited in turn on the front, back and sides of a p-type silicon substrate to form a composite dielectric film on the whole surface, and windows are opened locally to lead electrodes out. Through aluminum oxide, silicon dioxide, silicon oxynitride, silicon nitride with different refractive indexes and a back surface passivation layer with a laminated structure of the materials, the back surface recombination rate is greatly reduced, the back reflectivity is improved, the CTM of a module is reduced, and the light attenuation and heat-assisted light attenuation and the anti-PID performance of the cell are improved. The structure can be made on a boron / gallium-doped p-type monocrystalline silicon, p-type polycrystalline silicon or p-type monocrystalline-silicon-like substrate, and a passivation method based on the composite dielectric film passivation structure can be used to manufacture PERC cells, double-sided PERC+ cells and imbricate PERC cells. Based on the preparation process steps and sequence, the corresponding preparation mode and the process parameter range of the laminated structure, the making of the cell can be well completed.

A method for using the used active sludge and biomass to repair the polluted soil includes such steps as proportionally mixing the polluted soil with the used active sludge and biomass, and water, stacking for fermenting while periodically turning it over to obtain compost, applying it to the polluted soil, deep ploughing, and growing the plants with developed root system.

This invention relates to a method for contacting solar wafers containing one or more layers of temperature sensitive passivation layers by first creating local openings in the passivation layer(s) and then fill the openings with an electric conducting material. In this way, it becomes possible to avoid the relatively high temperatures needed in the conventional method for contacting solar wafers containing one or more passivation layer(s), and thus maintain the excellent passivation properties of newly developed temperature sensitive passivation layer(s) during and after the contacting.

The invention provides a composite passivator applicable to rice field soil cadmium pollution. The composite passivator is mainly prepared from chitosan, sodium bentonite, bone meal, lime, charcoal, ZnO and nanometer FeO. The invention further provides a preparation method and application of the composite passivator. By means of the composite passivator, the available cadmium content in rice and the cadmium content in rice can be remarkably reduced, the soil pH value can be improved, vast rice soil polluted by heavy metal cadmium can be treated, the organic matter content is greatly improved, and the soil biology-chemical characteristic is improved.

The invention relates to an InAs / GaSb secondary category superlattice infrared detector. The infrared detector comprises: a substrate; a buffer ohmic contact layer, which is manufactured on the substrate; a first secondary category superlattice layer, which is manufactured on the buffer ohmic contact layer so as to enable table tops to be formed at two sides above the buffer ohmic contact layer; an intrinsic secondary category superlattice light absorption layer, which is manufactured on the first secondary category superlattice layer; a second secondary category superlattice layer, which is manufactured on the intrinsic secondary category superlattice light absorption layer; an ohmic contact layer, which is manufactured on the second secondary category superlattice layer; a passivation layer, which covers portions of the table tops at the two sides of the buffer ohmic contact layer, side surfaces of the first secondary category superlattice layer, the intrinsic secondary category superlattice light absorption layer, the second secondary category superlattice layer and the ohmic contact layer as well as two side surfaces on the ohmic contact layer; upper electrodes, which are manufactured at two sides of a light transmission opening; and lower electrodes, which are manufactured inside electrode windows. Specifically, the light transmission opening is arranged in the middle of the passivation layer covering the ohmic contact layer; and the electrode windows are respectively arranged on the two table tops at two sides of the passivation layer covering the buffer ohmic contact layer.

A method of fabrication of the write head of a perpendicular recording head allows for production of P3 pole tips of width less than 200 nm (200×10−9 meters). The method includes fabricating the P2 flux shaping layer, depositing the P3 layer, depositing a layer of ion-milling resistant material, depositing at least one sacrificial layer, shaping the P3 layer into P3 pole tip, removing the at least one sacrificial layer to leave the P3 pole tip, and encapsulating the P3 pole tip.

A method of forming a high k gate stack (dielectric constant of greater than that of silicon dioxide) on a surface of a III-V compound semiconductor, such GaAs, is provided. The method includes subjecting a III-V compound semiconductor material to a precleaning process which removes native oxides from a surface of the III-V compound semiconductor material; forming a semiconductor, e.g., amorphous Si, layer in-situ on the cleaned surface of the III-V compound semiconductor material; and forming a dielectric material having a dielectric constant that is greater than silicon dioxide on the semiconducting layer. In some embodiments, the semiconducting layer is partially or completely converted into a layer including at least a surface layer that is comprised of AOxNy prior to forming the dielectric material. In accordance with the present invention, A is a semiconducting material, preferably Si, x is 0 to 1, y is 0 to 1 and x and y are both not zero.

A process for producing semiconductor nanocrystal cores, core-shell, core-buffer-shell, and multiple layer systems is disclosed. The process involves a non-coordinating solvent and in situ surfactant generation.

The present invention provides chemical-mechanical polishing (CMP) compositions and methods for polishing copper- and / or silver-containing substrates. The compositions of the present invention comprise a particulate abrasive, a primary film-forming metal-complexing agent, and a secondary film-forming metal-passivating agent in an aqueous carrier. Methods of polishing a substrate with the compositions of the invention are also disclosed.

The invention discloses a method for manufacturing a silicon solar cell. In the process of manufacturing a PN junction on a silicon wafer, a selective diffusion technology method is adopted, i,e. laser is utilized to heat a position, on which a positive electrode intends to be manufactured, on the surface of the silicon wafer; and under the action of heating, phosphorus in a phosphorus source uniformly adhered on the surface diffuses towards the inner of the silicon wafer, thus a heavy doping zone with smaller sheet resistance is formed at the position on which the positive electrode intends to be manufactured to effectively reduce the sheet resistance of the silicon solar cell, thereby not only being beneficial for increasing the open-circuit voltage of the silicon solar cell; the increase of the open-circuit voltage effectively improves the conversion efficiency of the silicon solar cell, reduces ohmic contact of a metal electrode and the silicon solar cell, thereby reducing the series resistance of the silicon solar cell, and being capable of meeting the purpose of industrialized production better.

The invention relates to a compound soil remediation agent containing microorganism bacteria and a preparation method thereof. The remediation agent comprises the following components in parts by weight: 0.01-3 parts of bacillus pasteurii spore powder, 5-50 parts of phosphogypsum powder, 10-60 parts of organic compost, 5-50 parts of turf powder, 1.5-5 parts of potassium fulvate powder, 0.2-0.5 part of powdery bacteria powder carriers and 0.15-1 part of glycerin. The remediation agent has round and smooth grains and high grain hardness, is harmless to seeds, can serve as a base fertilizer together with other fertilizers, can be sown together with seeds, integrates multiple remediation functions including organic complexation and passivation remediation, inorganic passivation remediation, microorganism passivation remediation and the like, has a comprehensive and strong soil remediation function, and can stimulate growth and reproduction of arbuscular mycorrhizal fungi at the roots of crops, accelerate heavy metal passivation, stimulate crop growth and enhance the immunities of crops.

The invention relates to an environment-friendly insulating coating for cold-rolled non-oriented silicon steel and a preparation method thereof. The components of the insulating coating include: phosphate, molybdate, water, organic resin, silane coupling agent, and glycerol; the above-mentioned The weight ratio of each component is: phosphate 100, molybdate 3-20, water 800-1500, organic resin 20-50, silane coupling agent 0.5-5, glycerol 8-15. The steps of the coating preparation method are: (1) coating insulating paint on the surface of cold-rolled non-oriented silicon steel; (2) baking and drying, the baking temperature is 150-300 ° C; 600°C, the sintering time is 30-90 seconds; (4) Finished product. The insulating paint of the invention does not contain harmful elements, and the coating has good insulating performance, good adhesion and corrosion resistance, good punching and shearing processability and weldability, and can withstand heat resistance of stress-relieving annealing. The method of the invention is simple to operate, and the coating prepared by the method has good punching and shearing processability and weldability, and can withstand heat resistance of stress-relieving annealing.

The invention provides a preparation method of a high-toughness metal-based nanometer composite material and belongs to the technical field of composite materials. The preparation method provided by the invention comprises the following steps of: firstly, using an atmosphere heat treatment process, generating a layer of a nanometer ceramic thin film on the sheet-shaped metal powder through reaction in-situ; and then carrying out densifying treatment by using a powder metallurgical process, so as to obtain the large compact metal-based composite material. The metal-based composite material prepared by the invention has a metal / ceramic alternative laminated structure, wherein a ceramic layer can be used for effectively restraining the reply of a metal layer and the crystal grain growth, improving the high-position wrong storage capability, keeping a nanometer crystal matrix structure, and causing the rotation and inactivation of fissures, so as to realize mechanical properties matched with the high toughness. The preparation method provided by the invention is simple, convenient and practicable, can be used for realizing the macro-quantized preparation of the large-size composite material, and is good for prompting engineering applications of the metal-based nanometer composite material.

The invention discloses an organic / inorganic composite passivator for passivating the activity of heavy metal Cd in farmland soil. The organic / inorganic composite passivator is prepared from 35% of crushed rape stalk, 35% of humus soil, 25% of bentonite and 5% phosphate (monopotassium phosphate) in a manner of fully mixing evenly at a ratio (the application ratio is the optimal application ratio obtained from an experiment). 200-400kg of composite passivator is fertilized to each mu of heavy metal Cd-polluted soil (concrete application amount is determined according to the heavy metal-polluted degree and the actual condition of the site); the content of effective-state Cd in the heavy metal-polluted soil is reduced by 38.07-53.18% in comparison with a control group by the passivation effect; the passivation effect on the heavy metal Cd is significant. The method has the advantages that the raw materials are free of poison and pollution, and easy to obtain, do not generate a significant effect on the physical and chemical properties of the soil after application, and do not generate secondary pollution, meanwhile, the fertility of the soil is significantly improved, and the yield of the crop is improved. The organic passivator is compounded with the inorganic passivator, so that the adsorption effects on the heavy metal caused by the passivators are facilitated by the chelation, and the passivation efficiency of the heavy metal is significantly improved.

A photoresist or semiconductor manufacturing residue stripping and cleaning composition comprising water, one or more alkaline compounds, one or more corrosion inhibitors, and one or more oxidized products of one or more antioxidants, the method of making the composition and the method of using the composition.

A photovoltaic solar cell is described that, according to one example embodiment, includes a semiconductor light absorbing layer and a dielectric stack on at least one of a front side of the light absorbing layer or a back side of the light absorbing layer. The dielectric stack includes a tunneling dielectric layer being sufficiently thin for charge carriers to tunnel across, and an overlaying dielectric layer being a different material than the overlaying dielectric. The solar cell also includes an electrically conductive contact physically contacting the overlaying dielectric. The electrically conductive contact and the overlaying dielectric together have either a work function suitable for selective collection of electrons that closely matches a conduction band of the light absorbing layer, or a work function suitable for selective collection of holes that closely matches a valence band of the light absorbing layer.

The present invention belongs to the field of chemical technology, and discloses one kind of acid corrosion retardant. The acid corrosion retardant contains urotropine, thiourea, benzotriazole, mercaptobezothiazole, sodium silicate and water. The acid corrosion retardant of the present invention is developed based on that some acids and some metals have high corrosion retarding rate.

The invention provides an N type crystalline silicon solar battery and a manufacturing method thereof. The N type crystalline silicon solar battery comprises an N type substrate, a boron emitting electrode and a first passivating layer, wherein the boron emitting electrode is arranged on the front surface of the N type substrate, one surface of the boron emitting electrode, which is far away from the N type substrate, is provided with the first passivating layer, and the first passivating layer is provided with a silicon oxide film, an aluminum oxide film and a silicon nitride film which are arranged from inside to outside. According to the N type crystalline silicon solar battery, the aluminum oxide film on the surface of the boron emitting electrode forms a layer of fixed negative charges at the position of an interface, a few charge carriers which are spread on the surface can be reflected back, the surface recombination rate of photo-generated carriers is reduced, a good field effect pasivating effect is provided, besides, during a sintering process, hydrogen which is enriched in the silicon nitride film can be spread to the position of a SiO2 / Si interface, dangling bonds at the position of the interface are passivated, a good chemical passivating effect is provided, thereby when the silicon nitride film, the aluminum oxide film and the silicon oxide film are utilized to passivate the boron emitting electrode,the field effect passivation and the chemical passivation are provided simultaneously.

The invention discloses an inverted pyramid structure of a polysilicon surface and a fabrication method of the inverted pyramid structure. The method comprises the following steps: preparing black silicon by different methods; rinsing a sample in a mixed liquid of hydrogen peroxide and ethanol amine; and carrying out retreatment on the washed black silicon in a mixed liquid of hydrogen peroxide, hydrofluoric acid, metaphosphoric acid and ammonium fluoride, so as to form the inverted pyramid structure of the polysilicon surface. A wet-chemical method which is different from acid and alkaline corrosion is adopted. According to the method, the effects of anisotropy can be reduced to the maximal extent; and the black silicon with different nano-structures can be corroded into a nano textured structure with a regular inverted pyramid structure through oxidation. Compared with the traditional polycrystalline silicon texture, the polysilicon inverted pyramid light-trapping structure disclosed by the invention is relatively high in light utilization rate and relatively low in reflectivity, so that the polysilicon inverted pyramid light-trapping structure has the characteristics of the inverted pyramid structure; compared with the traditional high surface recombination of a small and dense structure of the black silicon, the surface recombination is obviously reduced; and the efficiency of a solar cell is higher.

The invention relates to an interdigitated back contact solar battery structure with a passivation contact structure and a preparation method of the solar battery structure. The solar battery structure sequentially comprises a front-side passivation and anti-reflection film,a front-side doping layer,an n-type silicon substrate,a back-side passivation tunneling layer,a back-side doping layer,a back-side passivation film and battery electrodes from top to bottom in the thickness direction of a silicon substrate; the back-side doping layer is composed of a first doping region and a second dopingregion,and the first doping region and the second doping region are identical in structure and are interdigitated; the battery electrodes comprise the positive electrode and the negative electrode,thepositive electrode is in contact with the second doping region,and the negative electrode is in contact with the first doping region. By means of the structure,the possibility of current leakage in aspace can be well avoided. The reliability performance of a battery in a later product is improved,and the process difficulty of a battery assembly is reduced.

The invention discloses PERC solar cell light-injection induced regeneration equipment, which comprises a first region, a second region, a third region and a fourth region, wherein the first region, the second region and the third region respectively comprise an LED lamp group and a hot air outlet; and the fourth region comprises a hot air outlet and a cooling water plate. The LED lamp group in each region is controlled independently; light intensity is not less than 18 suns at least when the power of the LED lamp group in each region is 100%; the power of the LED lamp group in the first region is smaller than the power of the LED lamp groups in the second region and in the third region; and the temperature of the first region is higher than that of the second region and the third region.Correspondingly, the invention also discloses a PERC solar cell light-injection induced regeneration process. The PERC solar cell light-injection induced regeneration process and equipment can effectively passivate the boron oxygen defect state in a solar cell and make the cell piece reach a new stable state, thereby making CID reduce by 0.1%-0.8% under the condition where efficiency reduction isless than 0.05%.