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87results about How to "Prevent reoxidation" patented technology

Removal of charged defects from metal oxide-gate stacks

The present invention provides a method for removing charged defects from a material stack including a high k gate dielectric and a metal contact such that the final gate stack, which is useful in forming a pFET device, has a threshold voltage substantially within the silicon band gap and good carrier mobility. Specifically, the present invention provides a re-oxidation procedure that will restore the high k dielectric of a pFET device to its initial, low-defect state. It was unexpectedly determined that by exposing a material stack including a high k gate dielectric and a metal to dilute oxygen at low temperatures will substantially eliminate oxygen vacancies, resorting the device threshold to its proper value. Furthermore, it was determined that if dilute oxygen is used, it is possible to avoid undue oxidation of the underlying semiconductor substrate which would have a deleterious effect on the capacitance of the final metal-containing gate stack. The present invention also provides a semiconductor structure that includes at least one gate stack that has a threshold voltage within a control range and has good carrier mobility.
Owner:IBM CORP

Method for forming fine copper particle sintered product type of electric conductor having fine shape, method for forming fine copper wiring and thin copper film using said method

The present invention provides a process for forming a copper fine particle sintered product type of a fine-shaped electric conductor showing superior electroconductivity, which comprises steps of drawing a fine pattern with the use of a dispersion containing the copper fine particles having a surface oxide film layer, conducting a treatment for reducing the copper fine particles with the surface oxide film layer or copper oxide fine particles included in the pattern at a comparatively low temperature, and baking the resultant copper fine particles. Specifically, the process carries out the processes of; applying a dispersion containing the copper fine particles having the surface oxide film layer thereon or the copper oxide fine particles with an average particle diameter of 10 μm or smaller onto a substrate; and then performing a series of the heat treatment steps of heating the particles in the coated layer at temperature of 350° C. or lower under an atmosphere containing a vapor and a gas of a compound having reducibility to reduce the oxide film by a reduction reaction which used the compound having reducibility as a reducing agent, subsequently repeating a heat treatment combining an oxidizing treatment of a short time with a re-reducing treatment, and sintering the resultant copper fine particles with each other to form a layer of the sintered product.
Owner:HARIMA CHEM INC

Optical semiconductor apparatus and method for producing the same

An optical semiconductor apparatus can be configured by mounting an optical semiconductor element on a package substrate using a solder paste. The optical semiconductor apparatus can include a package substrate and a metal die pad formed on the substrate, and an optical semiconductor element bonded to the die pad with a solder material. The substrate can be made of a ceramic base material. A plurality of through holes can be formed in the substrate so that the through holes penetrate both the substrate base material and the die pad. Each of the through holes can have an inner surface where the ceramic base material is exposed. Each through hole can have an opening diameter greater than or equal to 40 μm and less than or equal to 100 μm. The plurality of through holes can be formed such that the total area of the openings of the through holes is 50% or less of the bonded area between the optical semiconductor element and the die pad including the through holes covered with the solder material. The through holes can be covered with the solder material at the upper end thereof where the optical semiconductor element and the die pad are bonded to each other.
Owner:STANLEY ELECTRIC CO LTD

Reduction Process and Plant

Reduction process and relative plant for the production of metallic iron by means of the direct reduction of iron ore, in which a reduction shaft is connected to a source of reducing gas obtained from the gasification of coal. The process advantageously comprises a step in which a portion or all of the synthesis gas entering the plant circuit is processed to separate the methane from the rest of the components of said synthesis gas. The advantageous management of the extracted methane enables the entire reduction process to be optimized, making the efficiency of the process independent of the methane content in the original synthesis gas and making it possible to control the carbon content of the product more accurately and more easily.
Owner:DANIELI & C OFF MEC SPA

Magnetic separation method for low-grade chromium-containing vanadium titanium magnetite metalized pellet

ActiveCN105907948AGuaranteed Metallization RatePromote enrichmentMagnetic separationMagnetiteCoal
The invention discloses a magnetic separation method for a low-grade chromium-containing vanadium titanium magnetite metalized pellet, belonging to the technical field of non-blast furnace smelting in comprehensive utilization methods of low-grade chromium-containing vanadium titanium magnetite powder. The method is carried out through the following steps of (1) mixing low-grade chromium-containing vanadium titanium magnetite powder, reduced pulverized coal, a binder and an additive by weighing; (2) preparing a pellet from the mixture, and drying; (3) carrying out coal-based pellet self-reduction high-temperature roasting on the dried pellet; (4) cooling the metalized pellet subjected to high-temperature roasting; and (5) smashing the cooled metalized pellet to obtain metalized pellet powder, and then, carrying out magnetic separation by using a magnetic separation tube to obtain an iron-enriched magnetic matter and titanium-enriched nonmagnetic matters. By using the method, the utilization ratios of strategic metal vanadium, titanium and chromium are maximized on the premise that the metallization ratio and iron recovery ratio for coal-based forced reduction of the low-grade chromium-containing vanadium titanium magnetite metalized pellet are increased.
Owner:NORTHEASTERN UNIV

Circuit module and method of manufacturing the same

Manufacturing method and circuit module, which comprises an insulator layer (1) and, inside the insulator layer (1), at least one component (6), which comprises contact areas (7), the material of which contains a first metal. On the surface of the insulator layer (1) are conductors (22), which comprise at least a first layer (12) and a second layer (32), in such a way that at least the second layer (32) contains a second metal. The circuit module comprises contact elements between the contact areas (7) and the conductors (22) for forming electrical contacts. The contact elements, for their part, comprise, on the surface of the material of the contact area (7), an intermediate layer (2), which contains a third metal, in such a way that the first, second, and third metals are different metals and the contact surface area (ACONT 1), between the intermediate layer (2) and the contact area (7) is less that the surface area (APAD) of the contact area (7).
Owner:IMBERATEK LLC

Silicide forming method and system thereof

Radical in a plasma generation chamber is supplied to a process chamber through an introducing aperture, and HF gas is supplied as a process gas from the vicinity of the radical introducing aperture. A native oxide film of the substrate surface of a IV group semiconductor doped an impurity is removed, with a good surface roughness equal to the wet cleaning. The substrate after the surface treatment is deposited with a metal material and metal silicide formation by thermal treatment is performed, and during these processes, the substrate is not exposed to the atmosphere, and a good contact resistance equal to or better than the wet process is obtained.
Owner:CANON ANELVA CORP

Method for recovering iron by utilizing high-iron red mud, and method for extracting aluminum by utilizing high-iron red mud

The invention provides a method for recovering iron by utilizing high-iron red mud. The method for recovering the iron by utilizing the high-iron red mud comprises the following steps of S1, placing the high-iron red mud in an airtight reduction furnace, feeding flare gas into the reduction furnace, and carrying out heating reduction so as to obtain a reduced material; and S2, after grinding the reduced material, carrying out magnetic separation so as to obtain magnetic separation concentrates and magnetic separation tailings, wherein the magnetic separation concentrates are iron ore concentrates; and the magnetic separation tailings are aluminum oxide enriched ores. The iron therein can be recovered, the flare gas can be utilized at the same time, and the atmospheric pollution produced byflare gas combustion of the petrochemical enterprise is avoided. The invention further provides a method for extracting aluminum by utilizing the high-iron red mud. The method for extracting the aluminum by utilizing the high-iron red mud comprises the steps of A1, treating the high-iron red mud by adopting the method so as to obtain magnetic separation concentrates and magnetic separation tailings; A2, after uniformly mixing the magnetic separation tailings, ammonium sulfate and water, roasting to obtain a roasted clinker; and A3, dissolving out the roasted clinker, and separating to obtainan aluminum-containing solution and residues after extracting the aluminum. The iron, the aluminum and silicon in the magnetic separation tailings are separated, so that the aim on comprehensively utilizing the high-iron red mud is achieved.
Owner:NORTHEASTERN UNIV LIAONING

Method for recovering iron from high-iron bauxite, and method for extracting aluminum from high-iron bauxite

The invention provides a method for recovering iron from high-iron bauxite. The method comprises the steps that S1, high-iron bauxite powder is placed in a closed reduction furnace, flare gas is introduced into the reduction furnace, heating reduction is conducted, and reduction materials are obtained; and S2, the reduction materials are ground and then subjected to magnetic separation, thus magnetic separation concentrate and magnetic separation tailings are obtained, the magnetic separation concentrate is iron concentrate, and the magnetic separation tailings are aluminum oxide enrichment ores. The iron in the high-iron bauxite can be recovered, meanwhile, the flare gas is utilized, and atmospheric pollution generated by flare gas burning of petrochemical enterprises is avoided. The invention further provides a method for extracting aluminum from the high-iron bauxite. The method comprises the steps that A1, the high-iron bauxite is treated through the method for recovering the ironfrom the high-iron bauxite, and thus magnetic separation concentrate and magnetic separation tailings are obtained; A2, the magnetic separation tailings, ammonium sulfate and water are evenly mixed and then roasted to obtain roasted clinker; and A3, the roasted clinker is dissolved out and separated to obtain an aluminum-containing solution and aluminum-extracting slag. Iron, the aluminum and silicon in the magnetic separation tailings are separated, and the purpose of comprehensive utilization of the high-iron bauxite is achieved.
Owner:NORTHEASTERN UNIV

Roasting gas-based reduction arsenic removal method for arsenic-containing copper slag

The invention relates to a roasting gas-based reduction arsenic removal method for arsenic-containing copper slag, and belongs to the field of solid waste treatment and utilization in the non-ferrousmetallurgy industry. The problem that an arsenic content in a reduced iron product exceeds the standard in the prior art is solved. The roasting gas-based reduction arsenic removal method for the arsenic-containing copper slag comprises the following steps of 1, grinding the arsenic-containing copper slag, and drying slag powder to remove free water, and specifically, the arsenic-containing copperslag contains arsenic oxide, arsenic sulfide and arsenate; 2, carrying out high-temperature roasting on the slag powder, introducing inert gas in a high-temperature roasting process, carrying out high-temperature roasting decomposition on the arsenic oxide and the arsenic sulfide in the arsenic-containing copper slag, then volatilizing in a gas form, and forming arsenic roasting slag from non-volatile components; and 3, continuously introducing reducing gas into the arsenic roasting slag for 40-100 minutes at the reducing temperature of 650-1200 DEG C, and gasifying and removing the arsenatein the arsenic roasting slag to obtain arsenic-removed slag charge of the arsenic-containing copper slag. According to the roasting gas-based reduction arsenic removal method, the arsenic content in the slag can be obviously reduced, and raw material with the qualified arsenic content is provided for subsequent continuous treatment of the copper slag.
Owner:CENT IRON & STEEL RES INST +1
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